• Title/Summary/Keyword: Emitters

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International Linkage of CO2 Emissions from Fossil Fuels as Embodied in Foreign Trade and Effects of Economic Policy Measure (국제무역에 함유된 지구온난화 가스 배출의 국제연관구조와 경제적 유인정책의 효과)

  • Chung, Hyun-Sik
    • Environmental and Resource Economics Review
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    • v.13 no.4
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    • pp.621-655
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    • 2004
  • Emission Trading (ET) among Annex I countries as expounded in Kyoto mechanism can be an effective mean to control Greenhouse Gases(GHGs), particularly $CO_2$ emissions from fossil fuels. For the international ET to be an effective tool to reduce the global emissions, however, it presupposes that there are no carbon leakage, i.e. Annex I emitters will purchase emission permits if emitting above caps, rather than importing emission-intensive goods from non-Annex I countries thus inducing the foreigners to emit instead. The extent to which a country leaks carbon through trade can be revealed by its bilateral balance of current accounts and related Balance of Emissions Embodied in Trade (BEET) supplemented by Emission Terms of Trade (ETT). Earlier studies on BEET and ETT relied on few selected countries in a partial equilibrium context, Korea being treated as insignificant though she is not a minor emitter. This paper is an attempt to examine BEET in the global CGE framework and to compare its structural difference across countries, with a special emphasis on South Korea.

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Review of the Gross Alpha for Characterization of Radioactive Waste (방사성폐기물 특성평가를 위한 전알파 분석법 고찰)

  • Kim, Hyuncheol;Lim, Jong-Myoung;Jang, Mee;Park, Ji-Young
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.18 no.2_spc
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    • pp.227-235
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    • 2020
  • In this study, we discussed the limitations of gross alpha measurements for the characterization of radioactive wastes produced in nuclear facilities through experimental tests and Monte Carlo N-particle transport simulations. The determination of gross alpha is essential for the disposal of radioactive waste produced in nuclear facilities in Korea. The measurements of gross alpha are easy to perform and yield rapid analytical results, but it cannot be used for quantitative analysis. The error of counting efficiency for gross alpha with various masses of the deposit on planchets using KCl and 241Am was determined. The relative deviation of the counting efficiency in samples having the same mass was 20%. Uranium was extracted from the soil through acid leaching and extraction chromatography, and the concentration of U determined by inductively coupled plasma-mass spectrometry (ICP-MS) was compared with the results for gross alpha. The gross alpha was underestimated by 50% compared to the U concentration by ICP-MS. The counting efficiency depended on the energy from the alpha emitters, which differed by up to three times in determination of the counting efficiency depending on the kinds of alpha radionuclides of interest. Therefore, the gross alpha is not compatible with the sum of radioactivity for each alpha emitter and is suitable as a screening method.

Effects of the irrigation Rate on Wetted Patterns in Sandy Loam Soil Under Trickle irrigation Condition (점적관개에서 관개율이 Sandy Loam토양의 습윤양상에 미치는 영향)

  • 김철수;이근후
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.31 no.2
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    • pp.104-115
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    • 1989
  • In an effort to clarify the wetted patterns of sandy loam soil under trickle irrigation conditions, the distance of wetted zone, infiltration capacity and soil wetted patterns, etc. were measured by gypsum block as soil moisture sensor located every 5 cm vertically and horizontaly in the soil bin under the such conditions as a). irrigation rates set to 2, 4, 6, 8 liters per hour b). total amount of water applied fixed to 14.62 liters per soil bin c) the hearing force of soil measured by plate penetrometer ranging from 1.04 to 1.22kg/cm$_2$ The results can be summarized as follows ; 1. The wetted distance in horizontal direction(H), the wetted distance in vertical direction(D), the horizontal infiltration capacity (iH) and the vertical infiltration capacity(in)could by explained as a function of time t. 2. The horizontal wetted distance (H) is explained by an exponetial function H= a$.$ t where b was found ranging from 021 to 026 under surface trickle irrigation, which was considered a lotlower than the classical value of 0.5 and these measurements were indifferent to the increasing irrigation rates. 3. As for the surface trickle irrigation where horizontal infiltration capacity(iH) is explained as iH = A $.$ t h, the coefficient A increases with respect to irrigation rates within the limits of 0.89~1.34. 4. In terms of surface trickle irrigation of the ratio of Dm Which is maximum vertical wetted distance to Hm, which is maximum horizontal wetted distance, found to be within range of 1.0 to 1.21. It was also noted that the value of Dm decreses when irrigation rates increases while the value of Hm changes the opposite direction. 5. The optimum location of sensors from emitter for surface trickle irrigation should he inside of hemisphere whose lateral radius is 28~30cm long and vertical radius is 10~12cm long. The distance between emitters should be within 60cm long. 6. In the study of vertical wetted distance( D) where D= a $.$ tb, the exponential coefficient b ranged from 0.61 to 0.75 in surface trickle irrigation, and from 0A9 to 0.68 for subsurface trickle irrigation. These measurements showed an increasing tendency to with respect to irrigation rates. 7. In case of vertical infiltration capacity( in), where iD= A $.$ t 1-h, the coefficient A for surface trickle irrigation found to be within range of 0.16 to 0.19 and did not show any relationships with varying degree of irrigation rates. However, the coefficient was varying from 0.09 to 0.22 and showed a tendency to increase vis-a-vis irrigation rates for subsurface trickle irrigation, in contrast. 8. In the observation of subsurface trickle irrigation, it was found that Dm/Hm ratio was within 1.52 to 1.91 and showed a decreasing tendency with respect to increasing rates of irrigation. 9. The location of sensors for subsurface trickle irrigation follows same pattern as above, with vertical distance from emitter being 10~17cm long and horizontal 22~25cm long. The location of emitter should be 50 cm. 10.The relationship between VS which is the volume of wetted soil and Q which is the total amount of water when soil is reached field capacity could be explained as VS= 2.914Q0.91and the irrigation rates showed no impacts on the above relationship.

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Design of Microstrip Patch Antenna using Inset-Fed Layered for Metallic Object in u-Port (U-항만 환경에서 금속부착을 위한 인셋 급전 마이크로패치 안테나 설계)

  • Choi, Yong-Seok;Seong, Hyeon-Kyeong
    • Journal of Satellite, Information and Communications
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    • v.10 no.2
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    • pp.80-85
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    • 2015
  • In this paper, we present, an indstrial RFID layered microstrip patch antenna is designed using an inset feed method in order to improve recognition rates in a long distance as tags are attached to metal object by improving a problem of feeding power in fabricating metal tags and reducing effects of metallic object. The inset feed shows a distinctive characteristic that has no separation between emitters and feed lines differing from a structure with the conventional inductive coupling feed. This structure makes possible to produce a type that presents a low antenna height and enables impedance coupling for tag chips. Although it shows a difficulty in the impedance coupling due to increases in the parasite capacitance between a ground plane and an emitter in an antenna according to decreases in the height of a tag antenna, it may become a merit in designing the tag antenna because the antenna impedance can be determined as an inductive manner if a shorted structure is used for feeding power. Therefore, in this paper the microstrip patch antenna is designed as a modified type and applies the inset feed in order to reduce effects of metallic objects where the antenna is be attached. Also, the antenna uses a multi-layer structure that includes a metal plate between radiator and ground instead of using a single layer.

Circuit Modeling and Simulation of Active Controlled Field Emitter Array for Display Application (디스플레이 응용을 위한 능동 제어형 전계 에미터 어레이의 회로 모델링 및 시뮬레이션)

  • Lee, Yun-Gyeong;Song, Yun-Ho;Yu, Hyeong-Jun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.114-121
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    • 2001
  • A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

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Ultraviolet LEDs using n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction (n-ZnO/i-ZnO/p-GaN:Mg 이종접합을 이용한 UV 발광 다이오드)

  • Han, W.S.;Kim, Y.Y.;Kong, B.H.;Cho, H.K.;Lee, J.H.;Kim, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.50-50
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    • 2008
  • ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

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Hand Gesture Segmentation Method using a Wrist-Worn Wearable Device

  • Lee, Dong-Woo;Son, Yong-Ki;Kim, Bae-Sun;Kim, Minkyu;Jeong, Hyun-Tae;Cho, Il-Yeon
    • Journal of the Ergonomics Society of Korea
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    • v.34 no.5
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    • pp.541-548
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    • 2015
  • Objective: We introduce a hand gesture segmentation method using a wrist-worn wearable device which can recognize simple gestures of clenching and unclenching ones' fist. Background: There are many types of smart watches and fitness bands in the markets. And most of them already adopt a gesture interaction to provide ease of use. However, there are many cases in which the malfunction is difficult to distinguish between the user's gesture commands and user's daily life motion. It is needed to develop a simple and clear gesture segmentation method to improve the gesture interaction performance. Method: At first, we defined the gestures of making a fist (start of gesture command) and opening one's fist (end of gesture command) as segmentation gestures to distinguish a gesture. The gestures of clenching and unclenching one's fist are simple and intuitive. And we also designed a single gesture consisting of a set of making a fist, a command gesture, and opening one's fist in order. To detect segmentation gestures at the bottom of the wrist, we used a wrist strap on which an array of infrared sensors (emitters and receivers) were mounted. When a user takes gestures of making a fist and opening one's a fist, this changes the shape of the bottom of the wrist, and simultaneously changes the reflected amount of the infrared light detected by the receiver sensor. Results: An experiment was conducted in order to evaluate gesture segmentation performance. 12 participants took part in the experiment: 10 males, and 2 females with an average age of 38. The recognition rates of the segmentation gestures, clenching and unclenching one's fist, are 99.58% and 100%, respectively. Conclusion: Through the experiment, we have evaluated gesture segmentation performance and its usability. The experimental results show a potential for our suggested segmentation method in the future. Application: The results of this study can be used to develop guidelines to prevent injury in auto workers at mission assembly plants.

Investigation of field emission mechanism of undoped polyucrystalline diamond films

  • Shim, Jae-Yeob;Chi, Eung-Joon;Song, Kie-Moon;Baik, Hong-Koo
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.62-62
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    • 1999
  • Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

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The field emission characteristics of an oxidized porous polysilicon field emitter using Pt/Ti emitter-electrode (Pt/Ti 전극을 사용한 산하된 다공질 폴리 실리콘 전계방출소자의 특성)

  • Han Sang-Kug;Park Keun-Yong;Choi Sie-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.6 s.336
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    • pp.23-30
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    • 2005
  • In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.

An Improved Movable 3 photomultiplier (3PM)-γ Coincidence Counter Using Logical Sum of Double Coincidences in β-Channel for Activity Standardization

  • Hwang, Han Yull;Lee, Jong Man
    • Journal of Radiation Protection and Research
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    • v.45 no.2
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    • pp.76-80
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    • 2020
  • Background: To improve the measurement accuracy of liquid-scintillation counting for activity standardization, it is necessary to significantly reduce the background caused by thermal noise or after-pulses. We have therefore improved a movable 3 photomultiplier (3PM)-γ coincidence-counting method using the logical sum of three double coincidences for β events. Materials and Methods: We designed a new data-acquisition system in which β events are obtained by counting the logical sum of three double coincidences. The change in β-detection efficiency can be derived by moving three photomultiplier tubes sequentially from the liquid-scintillation vial. The validity of the method was investigated by activity measurement of 134Cs calibrated at the Korea Research Institute of Standards and Science (KRISS) with 4π(PC)β-γ(NaI(Tl)) coincidence counting using a proportional counter (PC) for the β detector. Results and Discussion: Measurements were taken over 14 counting intervals for each liquidscintillation sample by displacing three photomultiplier tubes up to 45 mm from the sample. The dead time in each β- and γ-counting channel was adjusted to be a non-extending type of 20 ㎲. The background ranged about 1.2-3.3 s-1, such that the contributions of thermal noise or after-pulses were negligible. As the β-detection unit was moved away from the sample, the β-detection efficiencies varied between 0.54 and 0.81. The result obtained by the method at the reference date was 396.3 ± 1.7 kBq/g. This is consistent with the KRISS-certified value of 396.0 ± 2.0 kBq/g within the uncertainty range. Conclusion: The movable 3PM-γ method developed in the present work not only succeeded in reducing background counts to negligible levels but enabled β-detection efficiency to be varied by a geometrical method to apply the efficiency extrapolation method. Compared with our earlier work shown in the study of Hwang et al. [2], the measurement accuracy has much improved. Consequently, the method developed in this study is an improved method suitable for activity standardization of β-γ emitters.