• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.123.1-123.1
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• 2011

기존의 p-type 태양전지 공정과 유사한 공정으로 제작되는 n-type $ALU^+$태양전지는 후면에 Al을 screen printing하여 emitter층을 형성한 구조이다. screen printing은 공정의 단순화와 제조 단가의 저비용으로 인해, metalization 공정에서 많이 쓰이고 있다. 본 연구에서는 양산 가능한 n-type $ALU^+$태양전지 제작을 위해, 후면 Al emitter 층을 single, dobule, triple로 변경하며 Al의 양을 가변하였고, 그에 따른 특성의 변화를 연구하였다. screen printing 횟수가 변경된 후면 Al emitter 층의 특성은 DIV와 LIV 측정을 통해 분석하였다. 실험 결과 Al을 single printing 하였을 때보다, double, triple printing을 통하여 Al의 양을 증가하였을 때, DIV 데이터에서 직렬저항(Rs)가 $24.44{\Omega}/cm^2$에서 $0.31{\Omega}/cm^2$으로 감소하였고, 단락전류(Jsc)는 1.26mA/$cm^2$에서 37.7mA/$cm^2$으로 약 300% 증가한 것을 확인할 수 있었다. 프린팅 횟수에 따른 LIV 데이터의 Fill Factor를 분석하게 되면, double printing이 64.35%로 54.75%의 triple printing보다 약 1.17배 더 향상된 것으로 확인하였다. 이러한 결과를 바탕으로 후면 Al emitter 형성시에 Al의 양이 적절하지 못한 이유로, Al emitter가 제대로 형성되지 못하거나 과하게 형성되면, 태양전지 내부에 누설 저항의 변화와 누설 전류의 증가로 인해, 단락전류(Jsc)와 Fill Factor 감소의 주요 원인이 된다는 것을 확인할 수 있었다.

• 한국진공학회지
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• 제5권2호
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• pp.113-118
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• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.410-414
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• 2013

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

• 전자공학회논문지A
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• 제32A권2호
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.40-44
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• 2011

Recent studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. However, the rising of the cost results in additional processes to approach high efficiency. The fabrication process also becomes complicated with additional technologies. In this paper, we studied the selective emitter formation with phosphorous paste to improve the conversion efficiency. Selective emitter formations like two-step diffusion or etch-back method require at least one more step compared in the conventional line since heavily and lightly doped area was needed to form separately.However,one-step diffusion process is the method diffusing heavily and lightly doped area at the same time only with additional screen-printing step. This study lays the foundation for the simple way to form the selective emitter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.124-128
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• 1995

We have fabricated the vacuum magnetic device with a lateral field emitter arrays constructed on n-Si wafer, and investigated its magnetic characteristics. The device is consited to tip-arrayed emitter. gate and split-anode, The fabricated vacuum magnetic device has showed a good linearity of magnetic field and a high sensitivity compared with the conventional semiconductor magnetic device.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.33-36
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• 2000

Active-controlled field emitter arrays (ACFEAs) are developed by monolithically integrating molybdenum field emitter arrays with amorphous silicon thin film transistors (a-Si：H TFTs) on glass substrate. Transfer and output characteristics of the fabricated ACFEAs showed that the emission currents of FEAs can be accurately controlled by the gate bias voltages of TFTs. Also, the emission currents of the ACFEAs kept stable without any fluctuations during the 30 min-operation.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 대한전기학회논문지
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• 제41권9호
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• pp.1085-1094
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• 1992

A variable-spacing cesium thermionic energy conversion test station is designed and fabricated for the study of power generation. The diode is in the form of a guard-ringed plane-parallel geometry in which a polycrystalline rhenium emitter of 2 cmS02T area faces a radiation-cooled polycrystalline rhenium collector of 1.9 cmS02T area. The emission of plasma from heated refractory electrode metal is the driving reaction in the direct conversion of heat to electricity by thermionic energy conversion. The plasma is produced from electrons and positive ions formed simultaneously by thermionic emission and surface ionization of cesium atoms incident on the hot emitter from the cesium vapor in the diode. And high plasma density causes plasma multiplication within the gap due to volume ionization that results in high power output. The variation of the saturation current of a Knudsen converter is investigated at an emitter-collector gap of 0.1 mm and an emitter temperatures. A maximum power output of 13.47 watta/cmS02T is observed at a collector temperature of 963 K and a cesium reservoir temperature of 603 K.