• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.1-6
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• 2013

The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.395-401
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• 2013

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reaches to chamber O-ring wear out, MFC leaks, and/or leak at gas delivery line, and experiments are performed to funnel down the potential of the cause. While monitoring the plasma chemistry of the process chamber using OES, the emission trace for nitrogen species is observed at the chlorine gas supply. No trace of nitrogen species is found in other than chlorine gas supply, and we found that the amount of chlorine gas is slightly fluctuating. We successfully found the root cause of the reported misprocessing which may jeopardize the quality of thin film processing. Based on a quantitative analysis of the amount of nitrogen observed in the chamber, we conclude that the source of the leak is the fitting of the chlorine mass flow controller with the amount of around 2-5 sccm.

• 조명전기설비학회논문지
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• 제25권11호
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• pp.103-112
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• 2011

This paper is tried to analysis the optical emission spectroscopy related to the position of inductive load coil and flow rates of methane and oxygen in the RF inductive plasma process. According to the position of load coil, peak of $H_{\alpha}$, $H_{\beta}$, and CH were appeared strongly at the middle position of the coil and it decreased both direction. The electron temperature was approximately 0.9[eV] at that position. Emission intensities of $H_{\alpha}$, $H_{\beta}$, and CH increased linearly by increasing input power. In addition, intensities of $H_{\alpha}$ and $H_{\beta}$ increased by increasing the flow rate of oxygen. It might be ascribed that the oxygen species were bonded with $C_nH_m$ by suppressing the combination with hydrogen atoms. Consequently, the optimal position of the inductive coil is decided to the intermediate position between 4th and 5th turns, the wanted carbon thin-film is possible to deposit by controlling flow rates of methane and oxygen.

• 대한기계학회논문집B
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• 제34권3호
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• pp.245-250
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• 2010

초음속 유동에서의 공기 방전에 대한 기체 (회전) 온도를 측정하는 과정이 자세하게 소개되었다. 초음속 유동에서는 직접적인 온도 측정이 어려우므로 질소 분자 이온 스펙트럼의 광학적 발광 분광법을 이용하는 비침투 방식의 측정법이 사용되었다. 질소 분자 이온의 발광 스펙트럼 구조를 이해하기 위하여 발광선의 세기를 나타내는 관계식들에 대한 자세한 설명이 소개되었다. 유도된 발광 스펙트럼의 표현식을 이용하여 질소 이온의 first negative system을 구현하였고 실험으로 측정된 스펙트럼과 비교하였다. 합성 스펙트럼과 측정된 스펙트럼들은 밴드 스펙트럼 전 범위에 걸쳐서 6-8%의 상대오차 이내로 서로 일치함을 보여주었다. 마하 3의 초음속 경계층에서 25 mA의 직류 방전에 의한 기체 온도 분포 곡선을 측정한 결과 온도값이 최대 약 350 K인 선형적인 변화를 보여주었다.

• Tribology and Lubricants
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• 제29권1호
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• pp.51-55
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• 2013

In this work, a new fluorescence emission measurement technology was introduced and experimentally compared with other measurement methods, such as the titration method and IR spectroscopy, to validate it for the oil oxidation measurement of electrical insulating oil. The oxidation characteristics of insulating oil were found to be fairly represented by the titration method and IR spectroscopy, and the results are comparable to a change in the fluorescence emission ratio that is defined as the shift in fluorescence intensity in the measured wavelength range. The result also shows that by the measurement of fluorescence emission ratio, it is possible to detect the oxidation of oil relatively earlier than by other methods. This study suggests that the developed technology can provide sufficient information for evaluating the insulating oil quality, and that the developed FER sensor can be used as an effective condition monitoring device of electrical insulating oil oxidation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• 한국재료학회지
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• 제26권1호
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• pp.29-34
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• 2016

$NaLa_{1-x}{(MoO_4)}_2$:$Ho^{3+}/Yb^{3+}$ phosphors with the correct doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$ and $Yb^{3+}=0.35$, 0.40, 0.45 and 0.50) were successfully synthesized by the microwave-modified sol-gel method. Well-crystallized particles formed after heat-treatment at $900^{\circ}C$ for 16 h showed a fine and homogeneous morphology with particle sizes of $3-5{\mu}m$. The optical properties were examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the UC intensities of the doped samples exhibited strong yellow emissions based on the combination of strong emission bands at 545-nm and 655-nm emission bands in green and red spectral regions, respectively. The strong 545-nm emission band in the green region corresponds to the $^5S_2/^5F_4{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions, while the strong emission 655-nm band in the red region appears due to the $^5F_5{\rightarrow}^5I_8$ transition in $Ho^{3+}$ ions. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the upconversion emission intensity were evaluated in detail.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.353-360
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• 2012

As semiconductor device technology continuously shrinks, low-open area etch process prevails in front-end etch process, such as contact etch as well as one cylindrical storage (OCS) etch. To eliminate over loaded wafer processing test, it is commonly performed to emply diced small coupons at stage of initiative process development. In nominal etch condition, etch responses of whole wafer test and coupon test may be regarded to provide similar results; however, optical emission spectroscopy (OES) which is frequently utilize to monitor etch chemistry inside the chamber cannot be regarded as the same, especially etch mask is not the same material with wafer chuck. In this experiment, we compared OES data acquired from two cases of etch experiments; one with coupon etch tests mounted on photoresist coated wafer and the other with coupons only on the chuck. We observed different behaviors of OES data from the two sets of experiment, and the analytical results showed that careful investigation should be taken place in OES study, especially in coupon size etch.

• 천문학회보
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• 제43권1호
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• pp.68.2-68.2
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• 2018

Spectroscopic observations commonly use a slit or fiber; however, non-slit spectroscopy enables us to observe a larger number of targets in one frame of image. Hence, it has been adopted as an observational mode for observatories like HST and JWST. Slitless spectroscopy requires wavelength calibration solutions in order to distinguish and measure the absorption / emission lines from the spectra with high accuracy. We installed the Volume Phase Holographic (VPH) grating to SQUEAN camera on the McDonald 2.1m telescope and obtained images with spectral resolutions of ~ 100 and 200. In order to derive the wavelength calibration, we measured the distances between the 0th order images and spectral features of various quasars. The distances are converted to wavelengths using the known wavelengths of the emission lines. We tested several different methods of spectral extraction and peak estimation of emission lines. We will present the results for the wavelength calibration and suggest the reliable methods to find the solution.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.139-143
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• 2012

Optical emission spectroscopy (OES) is often used for real-time analysis of the plasma processes. OES has been suggested as a primary plasma process monitoring tool. It has the advantage of non-invasive in-situ monitoring capability but selecting the proper wavelengths for the analysis of OES data generally relies on empirically established methods. In this paper, we propose a practical method for the selection of OES wavelength peaks for the analysis of plasma etch process and this is done by investigating reactants and by-product gas species that reside in the plasma etch chamber. Wavelength selection criteria are based on the standard deviation and correlation coefficients. Moreover, chemical actinometry is employed for the normalization of the selected wavelengths. We also present the importance of chemical actinometry of OES data for quantitative analysis of plasma. Then, the suggested OES peak selection method is employed.. This method is used to find out the reason behind abnormal etching of PR erosion during a series of $SiO_2$ etch processes using the same recipe. From the experimental verification, we convinced that OES is not only capable for real-time detection of abnormal plasma process but it is also useful for the analysis of suspicious plasma behavior.