• Korean Chemical Engineering Research
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• v.56 no.6
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• pp.826-831
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• 2018

This study presents fabrication of bi-compartmental particles labeled by multiple fluorescence. To compartmentalize fluorescent expression at the particle, two fluorescent dyes with less overlap of the excitation and emission spectra are selected. To ensure the fluorescence stability, the fluorescent dyes contain acrylate functional groups in the molecules so that they can be cross-linked together with monomers constituting the particle. Strong fluorescent expression and compartmentalization were observed at the particle fabricated using the selected fluorescent dyes through confocal microscopy. Furthermore, long-term fluorescence stability was verified by measuring fluorescent expression and intensity for 4 weeks. We anticipate that the bi-compartmental particles labeled by multiple fluorescence can be widely used for multi-target drug delivery system, analysis of 3 dimensional Brownian motion, and investigation of 3 dimensional complex self-assembled morphologies.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.52.1-52.1
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• 2021

We present the results of multi-epoch, multi-frequency monitoring of a blazar 4C +29.45, which was regularly monitored as part of the Interferometric Monitoring of GAmma-ray Bright AGNs program - a key science program of the Korean Very long baseline interferometry Network (KVN). Observations were conducted simultaneously at 22, 43, 86 and 129 GHz during the 4 years from December 2012 to December 2016. We also used additional data from the 15 GHz Owens Valley Radio Observatory (OVRO) monitoring program. From the 15 GHz light curve, we estimated the variability time scales of the source during several radio flux enhancements. We found that the source experiencesd 6 radio flux enhancements with variability time scales of 9-187 days during the observing period, yielding corresponding variability Doppler factors of 9-27. From the multi-frequency simultaneous KVN observations, we were able to obtain accurate radio spectra of the source and hence to more precisely measure the turnover frequencies 𝜈_r of synchrotron self-absorbed (SSA) emission with a mean value of ${\bar{\nu}_r}=28.9GHz$. Using jet geometry assumptions, we estimated the size of the emitting region at the turnover frequency. Taking into account these results, we found that the equipartition magnetic field strength is up to two orders of magnitudes higher than the SSA magnetic field strength (0.6-99 mG). This is consistent with the source being particle dominated.

• International Journal of Computer Science & Network Security
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• v.24 no.6
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• pp.200-206
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• 2024

Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 10¹⁶ cm^-3 lies close to the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of radiological science and technology
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• v.29 no.3
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• pp.141-145
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• 2006

In this study, $Eu^{2+}$ ion was used as an activator in order to enhance the PL(photoluminescene) and PSL(photostimulated luminescence) intensity of $MCl_2:Eu^{2+}$(M = Ca, Sr, Ba)phosphors and the chracteristics of PL and PSL of the phosphors were investigated. The emission of $MCl_2:Eu^{2+}$(M = Ca, Sr, Ba) phosphors shows a shift wavelength when the host caution changes. The optimal preparing conditions of $CaCl_2:Eu^{2+}$ phosphor were 0.5 mol％ of $EuCl_2$ and the sintering temperature were $745^{\circ}C$, 45 min. in $H_2$ atmosphere. The PL and PSL spectra of $CaCl_2:Eu^{2+}$ locate in the range of $365{\sim}388\;nm$, peaking at 370 and 380 nm. The optimal preparing conditions of $BaCl_2:Eu^{2+}$ phosphor were 0.5 mol％ of $EuCl_2$ and the sintering temperature were $905^{\circ}C$, 45 min. in $H_2$ atmosphere. The PL and PSL spectra of $BaCl_2:Eu^{2+}$ locate in the range of $370{\sim}460\;nm$, peaking at 398 nm. The optimal preparing conditions of $SrCl_2:Eu^{2+}$ phosphor were 0.5mol％ of $EuCl_2$ and the sintering temperature were $840^{\circ}C$, 45min. in $H_2$ atmosphere. The PL and PSL spectra of $SrCl_2:Eu^{2+}$ locate in the range of $380{\sim}440\;nm$, peaking at 407 nm. The dose response of the $MCl_2:Eu^{2+}$(0.5 mol%)(M = Ba, Sr) phosphors were linear within $0.25{\sim}200\;mGy$ of 100 kV X-ray and the PSL intensity of the $SrCl_2:Eu^{2+}$ and $BaCl_2:Eu^{2+}$ phosphors faded to approximately 60 and 40% respectively after 120 min at room temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.253-257
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• 2008

To enhance the luminescence properties, the red phosphor composed of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ as doping concentration of Zn ion is synthesized at $1200^{\circ}C$ for 6 hrs in air atmosphere by conventional solid reaction method. As a result of the red phosphor $(Y,\;Zn)_2O_3$:$Eu^{3+}$ is measured X-ray diffraction (XRD), The main peak is nearly corresponded to the same as JCPDS card (No. 41-1105). When the doping concentration of Zn ion is more than 5 mol%, However, the ZnO peak is showed by XRD analysis. Therefore, when the doping concentration of Zn ion is less than 5 mol%, the Zn ion is well mixed in $Y_2O_3$ structure without the impurity phases. The photoluminescence (PL) properties is shown as this phosphor is excited in 254 nm region and the highest emission spectra of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ has shown in 612 nm region because of a typical energy transition ($^5D_0{\rightarrow}^7F_2$) of $Eu^{3+}$ ion. As the doping concentration of Zn ion is more than 10 mol%, the emission peak is suddenly decreased. when the highest emission peak as doping concentration of Zn ion is shown, the composition of this phosphor is $(Y_{0.95},\;Zn_{0.05})_2O_3$:$Eu^{3+}_{0.075}$ and the particle size analyzed by FE-SEM is confirmed from 0.4 to $3{\mu}m$.

• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.385-394
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• 2017

In this study, reaction mechanism and curing characteristics of adhesives formulated with NaOH- and $H_2SO_4$-hydrolyzed chicken feather (CF) and formaldehyde-based crosslinkers were investigated by FT-IR and DSC. In addition, adhesive properties and formaldehyde emission of medium-density fiberboards (MDF) applied with the adhesives were measured. CF-based adhesives having a solid content of 40% and over were very viscous at $25^{\circ}C$, but the viscosity reduced to $300{\sim}660m{\cdot}Pa{\cdot}s$ at $50^{\circ}C$. Consequently, the adhesives could be used as a sprayable resin. Through the FT-IR spectra of liquid and cured CF-based adhesives, addition reaction of methylol group and condensation reaction between the functional groups with the use of formaldehyde-based crosslinkers were identified. From the analysis of DSC, it was elucidated for CF-based adhesives to require a higher pressing temperature or longer pressing time comparing to commercial urea-formaldehyde (C-UF) resin. MDF bonded with CF-based adhesives, which was formulated with 5% NaOH-hydrolyzed CF (CF-AK-5%) and PF of formaldehyde to phenol mole ratio of 2.5 (PF-2.5), and pressed for 8 min had higher MOR and IB than those with other CF-based adhesives. MOR and IB of MDF bonded with the CF-based adhesives regardless of formulation type and pressing time were higher than those with C-UF resin. When the values compared with the minimum requirements of KS standard, IB exceeded the KS standard in all formulations and pressing time, but MOR of only MDF bonded with CF-AK-5% and PF-2.5 and pressed for 8 min satisfied the KS standard. What was worse, 24-TS of MDF bonded with all CF-based adhesives did not satisfied the KS standard. However, MOR and 24-TS can be improved by increasing the target density of MDF or the amount of wax emulsion, which is added to improve the water resistance of MDF. Importantly, the use of CF-based adhesives decreased greatly the formaldehyde emission. Based on the results, we reached the conclusion that CF-based adhesives formulated under proper conditions had a potential as a sprayable resin for the production of wood panels.