• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Current Optics and Photonics
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• v.3 no.4
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• pp.292-297
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• 2019

We propose a ring resonator-based orbital angular momentum carrying vortex beam generator design with high vertical directional emission efficiency. By adopting a vertically asymmetric grating structure in the ring resonator, optimized for enhanced vertical emission, an emission efficiency in one direction reaches as high as 78%, exceeding the 50% theoretical limit of previously designed vertically symmetric grating-assisted ring resonator-based structures.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.955-960
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• 2007

In this paper, the deviation of tunneling current for gate voltage has been investigated in double gate MOSFET developed to decrease the short channel effects. In device scaled to nano units, the tunneling current is very important current factor and rapidly increases,compared with thermionic emission current according to device size scaled down. We consider the change of tunneling current according to gate voltage in this study. The potential distribution is derived to observe the change of tunneling current according to gate voltage, and the deviation of off-current is derived from the relation of potential distribution and tunneling probability. The derived current is compared with the termionic emission current, and the relation of effective gate voltage to decrease tunneling current is obtained.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.79-84
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• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.506-509
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• 2002

In this paper. we give pressure stimulation into organic ultra thin films and detected the induced displacement current proper ties, and then manufacture a device under the accumulation condition. In processing of a device manufacture. And electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes. followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear, Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.627-632
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• 2001

There are claims that ESE(Early streamer emission) Air terminals offer a vastly increased zone of protection over that of traditional lightning rods by causing the emission of an upward streamer/leader that will propagate towards the tip of downward leader at an early stage in the attachment process than would occur for a simple rod in the same geometrical configurations. This paper shows the results of comparing test a particular type of ESE air terminals with a simple rod conducted in the KEH HV laboratory, which are lightning impulse voltage test, flashover direction test and corona emission current measurement. The results from this test show a completely random scattering of flashovers to the conventional and ESE air terminals under identical electrics] and geometrical conditions, and thus shows no advantage of one terminal over the other.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1327-1330
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• 2005

The color shifting from yellow to green of electroluminescent emission from ZnS: Cu alternating current thick film electroluminescent (ACTFEL) devices has been achieved by changing the Mg composition in the phosphor layers. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared from these phosphor layers show a shifting from yellow (x=0.45, y=0.52) towards green (x=0.36, y=0.58). The various parameters influencing the emission intensity were also investigated.