• 한국결정성장학회지
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• 제14권5호
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Current Optics and Photonics
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• 제3권4호
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• pp.292-297
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• 2019

We propose a ring resonator-based orbital angular momentum carrying vortex beam generator design with high vertical directional emission efficiency. By adopting a vertically asymmetric grating structure in the ring resonator, optimized for enhanced vertical emission, an emission efficiency in one direction reaches as high as 78%, exceeding the 50% theoretical limit of previously designed vertically symmetric grating-assisted ring resonator-based structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• 한국재료학회지
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• 제10권2호
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• pp.124-127
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• 2000

Si FEA로부터 tip의 표면을 Ti 금속으로 silicidation한 새로운 3극형 Ti-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. 제작된 소자에서 단위 pixel(pixel area : $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$, tip array : $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$)을 통해 측정된 전계 방출 특성은 $10^8Torr$의 고진공 상태에서 turn-on 전압이 약 70V로, 아노드 방출전류의 크기와 current degradation이 $V_A=500V,\;V_G=150V$ 바이어스 아래에서 각각 2nA/tip와 0.3%/min로 나타났다. 3극형 Ti-silicided Si FEA의 낮은 turn-on 전압과 높은 전류안정성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안정성과 낮은 일함수에 기인하는 것으로 판단된다.

• 한국정보통신학회논문지
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• 제11권5호
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• pp.955-960
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• 2007

본 연구에서는 단채널효과를 감소시키기 위하여 개발되고 있는 이중게이트 MOSFET의 게이트인가 전압에 따른 터널링전류의 변화를 관찰하고자한다. 소자가 나노단위까지 스케일링되면서 터널링전류는 매우 중요한 전류요소가 되었으며 특히 차단전류를 구성하고 있는 열방사전류와 비교하면 소자의 크기가 미세해질수록 급격히 증가하는 특성을 보이고 있다. 이를 감소시키기 위한 연구가 활발히 진행되고 있으며 본 연구에서는 이에 부응하기 위하여 게이트 인가전압에 따른 터널링전류의 변화를 고찰할 것이다. 게이트전압에 대한 터널링전류 변화를 관찰하기 위하여 전위분포함수를 유도하였으며 전위분포함수와 터널링확률의 관계로부터 차단전류변화를 유도하였다. 이와같이 유도한 전류는 열방사전류와 비교되었으며 터널링전류 감소를 위한 유효게이트전압에 대한 관계를 유도하였다.

• 센서학회지
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• 제26권2호
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• pp.79-84
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• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.506-509
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• 2002

In this paper. we give pressure stimulation into organic ultra thin films and detected the induced displacement current proper ties, and then manufacture a device under the accumulation condition. In processing of a device manufacture. And electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes. followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear, Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

• 한국표면공학회지
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• 제46권2호
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권12호
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• pp.627-632
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• 2001

There are claims that ESE(Early streamer emission) Air terminals offer a vastly increased zone of protection over that of traditional lightning rods by causing the emission of an upward streamer/leader that will propagate towards the tip of downward leader at an early stage in the attachment process than would occur for a simple rod in the same geometrical configurations. This paper shows the results of comparing test a particular type of ESE air terminals with a simple rod conducted in the KEH HV laboratory, which are lightning impulse voltage test, flashover direction test and corona emission current measurement. The results from this test show a completely random scattering of flashovers to the conventional and ESE air terminals under identical electrics] and geometrical conditions, and thus shows no advantage of one terminal over the other.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1327-1330
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• 2005

The color shifting from yellow to green of electroluminescent emission from ZnS: Cu alternating current thick film electroluminescent (ACTFEL) devices has been achieved by changing the Mg composition in the phosphor layers. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared from these phosphor layers show a shifting from yellow (x=0.45, y=0.52) towards green (x=0.36, y=0.58). The various parameters influencing the emission intensity were also investigated.