• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.174-178
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• 2015

We studied emission characteristics for blue fluorescent dual-side emission OLED with Al cathode thickness variation. In the bottom emission OLED of Al cathode with 10, 15, 20, 25, 30, and 150 nm thickness, maximum luminance showed 36.1, 8,130, 9,300, 12,000, 13,000, and $12,890cd/m^2$, and maximum current efficiency showed 2, 8.8, 10, 10.5, 10.8, and 11.4 cd/A, respectively. The emission characteristics of the bottom emission seemed to be improved according to decrease of resistance as the thickness of Al cathode increase. In the top emission OLED of Al cathode with 10, 15, 20, 25, and 30 nm thickness, maximum luminance showed 4.3, 351, 131, 88.6, and $33.2cd/m^2$, and maximum current efficiency showed 0.23, 0.38, 0.21, 0.16, and 0.09 cd/A, respectively. It yielded the highest maximum luminance and maximum current efficiency in Al cathode thickness 15 nm. It showed a tendency to decrease as the thickness of Al cathode increase. The reason for this is due to decrease of transmittance with increasing of Al cathode thickness. The electroluminescent spectra of bottom and top emission OLED were not change.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1602-1605
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• 2008

We considered most general electron emission caused by temperature as well as electric field with a free electron gas model. The total electron emission current density comes from field emission effect where electron energy is lower than vacuum and from thermionic emission effect where electron energy is higher than vacuum. The total electron emission current density is shown as a function of temperature for constant electric field, and as a function of electric field for constant temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.1
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• pp.179-183
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• 2019

The system stability must be ensured from the switching noise due to the power conversion efficiency and power conversion system miniaturization. Therefore, countermeasures to reduce switching noise during power conversion are essential. Thus, in the previous paper, we constructed the DC / DC Buck Converter circuit using MPQ4432 driver of MPS, and simulated the switching noise characteristics which occurs when the components are arranged differently in the 4 - layer PCB circuit structure with reference plane. In this paper, two different simulated circuits are fabricated and the characteristics of the conducted emission and the radiated emission are analyzed in the same way as the simulation. As a result, it was confirmed that the Conducted Emission characteristic was reduced by 2 ~ 9dB in the low frequency band and 6 ~ 7dB in the high frequency band depending on the configuration of the current return path. And the radiated emission characteristic is reduced by 9 dB. Conducted emission simulation results show that 6 ~ 7dB in the low frequency range and 2 ~ 9dB in the measurement result are somewhat different. In the high frequency band, it is confirmed that the experimental and simulation results are about 7dB. And Radiated Emission confirmed 12dB decrease in simulation, but confirmed decrease of 9dB in measurement result. It is confirmed that there is a slight difference in the amount of reduction, but the design of the power conversion circuit improves the noise characteristics according to the configuration of the current return path.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.505-511
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• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.104-109
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• 2014

To operate organic light emitting device (OLED) with alternating current (AC) power source without AC/DC(direct current) converter, we fabricated the fluorescent OLED and measured the emission characteristics with AC and DC. The OLED operated by AC showed higher maximum current efficiency of 8.2 cd/A and maximum power efficiency of 8.3 lm/W. But current efficiency and power efficiency of AC driven OLED showed worse than DC driven OLED at high voltage above 10 V. This result can be explained by the peak voltage of AC was $\sqrt{2}$ times than DC, In case of low driving voltage the emission characteristics were improved by the peak voltage of AC, but in case of high driving voltage the emission efficiencies were decreased by the roll off phenomena. Finally, serial OLED arrays using twelve OLEDs driven by AC 110 V showed average voltage of 9.17 V, voltage uniformity of 99.0%, average luminance of $1,175cd/m^2$, luminance uniformity of 94.4%.

• Applied Microscopy
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• v.46 no.4
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• pp.244-252
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• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

• Journal of Information Display
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• v.9 no.4
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• pp.30-34
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• 2008

Field emitter arrays (FEAs) were developed using carbon nanotubes (CNTs) as electron emission sources. The CNTs were grown using a selective-positioning technique with a resist-protection layer. The light emission properties were studied through the electron emission of the CNTs on patterned islands, which were modulated with island diameter and spacing. The electron emission of CNT arrays with $5{\mu}m$ diameters and $10{\mu}m$ heights increased with increased spacing (from $10{\mu}m$ to $40{\mu}m$). The electron emission current of the $40-{\mu}m$-island-spacing sample showed a current density of 1.33 mA/$cm^2$ at E = 11 V/${\mu}m$, and a turn-on field of 7 V/${\mu}m$ at $1{\mu}A$ emission current. Uniform electron emission current and light emission were achieved with $40{\mu}m$ island spacing and $5{\mu}m$ island diameter.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.383-383
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• 2011

Generally, field emitters can be categorized into two types according to the emitter shape, one is a planar field emitter and the other is a point emitter. The planar field emitter is used for displays, flat lamps and signage boards. On the other hands, the point field emitter is expected to play a significant role in x-ray sources and electron beam sources. Such applications of the point field emitters, especially, need large emission current and high emission stability with a small electron beam size. A few reports announced point emitters made by carbon nanotubes (CNTs). However, they still have suffered from poor reproducibility and low emission current. Here, we demonstrated high performance CNT point emitters by attaching CNTs onto graphite rod. Graphite rod exhibited good electrical conductivity and chemical stability. In this method, the shape of the point emitter could be easily controlled by changing the length and diameter of the graphite rod. The CNT point emitter showed emission current over 1 mA at an applied electric field of 1.4 V/${\mu}m$. We consider that the stable emission performance is attributed to the stable contact between CNTs and graphite rod.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.150-150
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• 2010

Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of $1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability.