• Title/Summary/Keyword: Emission current

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TFT 채널층으로 사용하기 위한 IGZO박막의 산소분압에 따른 특성변화

  • Sin, Ju-Hong;Kim, Ji-Hong;No, Ji-Hyeong;Lee, Gyeong-Ju;Kim, Jae-Won;Do, Gang-Min;Park, Jae-Ho;Jo, Seul-Gi;Yeo, In-Hyeong;Mun, Byeong-Mu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.260-260
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    • 2011
  • 투명 비정질 산화물반도체는 디스플레이의 구동소자인 박막 트랜지스터에 채널층으로 사용된다. 또한 투명하면서 유연성이 있는 소자를 저비용으로 제작할 수 있는 장점을 가진다. 투명 산화물반도체 재료 중 IGZO는 Si 또는 GaAs와 같은 공유결합성 반도체와는 다른 전자 배치로 전도대가 금속이온의 ns 궤도에서 형성되며, 가전도대가 산소 음이온의 2p 궤도에서 형성된다. 특히 큰 반경의 금속 양이온은 인접한 양이온과 궤도 겹침이 크게 발생하게 되며 캐리어의 효과적인 이동 경로를 제공해줌으로써 다른 비정질 반도체와는 다르게 높은 전하이동도(~10 $cm^2$/Vs)를 가진다. 따라서 저온공정에서 우수한 성능의 TFT소자를 제작할 수 있는 장점이 있다. 본 연구에서는 TFT 채널층으로 사용하기 위한 a-IGZO박막의 산소분압에 따른 특성변화를 분석 하였다. a-IGZO박막은 Pulsed Laser Deposition (PLD)를 이용하여 산소분압(20~200 mTorr) 변화에 따라 Glass기판에 증착하였다. 증착된 a-IGZO 박막의 구조적 특성으로는 X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), 광학적 특성은 UV-vis spectroscopy 분석을 통해서 알아보았다. TFT 채널층의 조건으로는 낮은 off-current, 높은 on-off ratio를 위해 고저항 ($10^3\;{\Omega}cm$)의 진성반도체 성질과 source/drain금속과의 낮은 접촉저항(ohmic contact) 등의 전기적 성질이 필요하다. 따라서 이러한 전기적 특성확인을 위해 transmission line method (TLM)을 사용하여 접촉저항과 비저항을 측정하였고, 채널층으로 적합한 분압조건을 확인해볼 수 있었다.

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Morphological Structural and Electrical Properties of DC Magnetron Sputtered Mo Thin Films for Solar Cell Application

  • Fan, Rong;Jung, Sung-Hee;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.389-389
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    • 2012
  • Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

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Demonstration of Nonpolar a-plane Light Emitting Diodes on r-plane Sapphire Substrate by MOCVD

  • Son, Ji-Su;Baik, Kwang-Hyeon;Song, Hoo-Young;Kim, Ji-Hoon;Kim, Tae-Geun;Hwang, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.147-147
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    • 2011
  • High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

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코어-쉘 양자점을 포함한 poly(N-vinylcarbazole)층을 사용하여 제작한 비휘발성 메모리 소자의 전하 수송 메카니즘과 안정성

  • Son, Jeong-Min;Yun, Dong-Yeol;Kim, Tae-Hwan;Kim, Seong-U;Kim, Sang-Uk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.368-368
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    • 2012
  • 무기물 나노입자를 포함하는 유기물/무기물 나노복합체는 플렉시블 전자 소자에 적용이 가능하기 때문에 차세대 비휘발성 메모리 소자에 대한 응용연구가 활발히 진행되고 있다. 본 논문에서는 $CuInS_2$ (CIS)/ZnS 코어-쉘 나노 입자를 포함한 poly(N-vinylcarbazole) (PVK) 고분자 박막을 기억 매체로 사용하는 유기 쌍안정성 소자(organic bistable devices, OBD) 메모리 소자를 제작하고 전기적 성질에 대하여 관찰하고 전하 수송 메카니즘에 대하여 규명하였다. 화학적 방법으로 형성한 CIS/ZnS 코어-쉘 나노 입자와 PVK를 toluene 용매에 녹인 후 초음파 교반기를 사용하여 나노 복합 소재를 형성하였다. 하부 전극으로 indium-tin-oxide (ITO)가 증착되어 있는 유리 기판 위에 나노 복합 소재를 스핀코팅 방법으로 도포한 후 열을 가해 잔류 용매를 제거하였다. CIS/ZnS 코어-쉘 나노 입자가 분산되어 있는 PVK 나노 복합 소재로 구성된 박막위에 상부 전극으로 Al을 열증착하여 메모리 소자를 제작하였다. 전류-전압 (I-V) 측정 결과에서 저전압에서는 전도도가 낮은 OFF 상태를 유지하다 어느 특정 양의 전압에서 전도도가 갑자기 증가하여 높은 전도도의 ON 상태로 전이되는 쌍안정성이 관찰되었다. 전류의 ON/OFF 비율은 약 $10^3$이며 역방향 바이어스를 가해주었을 때 특정 음의 전압에서 전도도가 ON 상태에서 OFF 상태로 전환되는 전형적인 OBD 메모리 소자의 I-V 특성을 나타났다. 메모리 전하 수송 메커니즘 분석 결과 쓰기 과정은 thermionic emission (TE), space-charge-limited-current (SCLS) 모델과 지우기 과정은 Fowler-Nordheim (FN) 터널링 모델로 설명이 되었다. 제작된 소자에 대해 기억 시간 측정 결과는 ON과 OFF 상태의 전류가 장시간에도 변화가 거의 없는 소자의 안정성을 보여주었다. 이 실험 결과는 CIS/ZnS 코어-쉘 나노 입자가 분산되어 있는 PVK 나노 복합 소재를 사용하여 안정성을 가진 OBD 메모리 소자를 제작할 수 있음을 보여주고 있다.

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Effects of Etch Parameters on Etching of CoFeB Thin Films in $CH_4/O_2/Ar$ Mix

  • Lee, Tea-Young;Lee, Il-Hoon;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.390-390
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    • 2012
  • Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

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Spindle-shaped Fe2O3 Nanoparticle Coated Carbon Nanofiber Composites for Low-cost Dye-sensitized Solar Cells (저비용 염료감응 태양전지를 위한 방추형 Fe2O3 나노입자가 코팅된 탄소나노섬유 복합체)

  • Oh, Dong-Hyeun;An, HyeLan;Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.95-101
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    • 2016
  • Carbon nanofiber (CNF) composites coated with spindle-shaped $Fe_2O_3$ nanoparticles (NPs) are fabricated by a combination of an electrospinning method and a hydrothermal method, and their morphological, structural, and chemical properties are measured by field-emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. For comparison, CNFs and spindle-shaped $Fe_2O_3$ NPs are prepared by either an electrospinning method or a hydrothermal method, respectively. Dye-sensitized solar cells (DSSCs) fabricated with the composites exhibit enhanced open circuit voltage (0.70 V), short-circuit current density ($12.82mA/cm^2$), fill factor (61.30%), and power conversion efficiency (5.52%) compared to those of the CNFs (0.66 V, $11.61mA/cm^2$, 51.96%, and 3.97%) and spindle-shaped $Fe_2O_3$ NPs (0.67 V, $11.45mA/cm^2$, 50.17%, and 3.86%). This performance improvement can be attributed to a synergistic effect of a superb catalytic reaction of spindle-shaped $Fe_2O_3$ NPs and efficient charge transfer relative to the one-dimensional nanostructure of the CNFs. Therefore, spindle-shaped $Fe_2O_3$-NP-coated CNF composites may be proposed as a potential alternative material for low-cost counter electrodes in DSSCs.

Characteristic Comparison of MAZO and MIZO Thin Films with Mg and ZnO Variation (Mg와 ZnO 함량변화에 따른 MAZO, MIZO 박막의 특성비교)

  • Jang, Jun Sung;Kim, In Young;Jeong, Chae Hwan;Moon, Jong Ha;Kim, Jin Hyeok
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.101-105
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    • 2015
  • ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

A Study on the Current Practice in Eco-Industrial Development (자원 순환형 산업개발의 유형 연구)

  • Moon, Seogwoong
    • Environmental and Resource Economics Review
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    • v.12 no.2
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    • pp.347-382
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    • 2003
  • The paper presents available options that Korea can adopt in an effort to promote eco-industrial development in a near future. What is missing and the reasons why Korea is behind the other countries in the area are: 1) Lack of holistic view and the integrated approach toward economy and environment in policy implementation, 2) Lack of understanding, among entrepreneurs, of the concept of productivity per input resource, and the fact that not only labor and capital productivity but also the total productivity enhancement is vital for industry's competitive edge; There has been no driving force in the market to develop economies of system integration to turn industrial wastes to valuable input resources, 3) Unsupportive regulatory system regarding the trade of by products, and 4) Lack of financing and incentive mechanism. 5) Lack of information forum. Regulatory reform should be taken for the direction that in effect increase the price of disposal and motivate firms to seek symbiotic relationship with other firms, and facilitate trade by-product between firms. Financing and incentive mechanism should be introduced in order for the industry to find easy access to the opportunities for organizing the network to transform wastes in negative value to the value added resources. Also information network should be established to provide a market for by-product exchange and public education to improve industry's environmental performance.

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A study on the accommodation of common LED to shipboard (육상용 LED 램프의 선박 적응력에 관한 연구)

  • Jeong, Ji-Hyun;Park, Hwan-Chul;Kim, Yong-Joo;Seo, Sang-Do;Han, Seung-Jae;Kim, Min-Sok
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.46 no.4
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    • pp.503-508
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    • 2010
  • Common LED (Light Emitting Diode) lamp has many advantages to compare with fluorescent lamp, long life and no pollution matter like the mercury. The LED lamp is a good light source especially for shipboard lighting because of its compact structure which prevents explosion and shock. Also, low maintenance cost is expected due to its longer life time in comparison with conventional lamps. The LED lamp, however, need some estimates that change of voltage and frequency, vibration, moisture on board to definite accommodation of the LED lamp to shipboard. The purpose of this study is to compare physical properties of a fluorescent lamp with one of the common LED lamp so as to analyze accommodation of common LED lamp on board. This study was carried out in two stages. First, temperature, humidity of illumination, voltage, electric current, frequency and electric power were measured by using experimental equipments. Second, a comparative analysis of consumption electric power, annual oil charge, annual CO2 emission and lamp life time, etc of the fluorescent lamp and common LED one was made. As a result of the study, the consumption electric power of fluorescent lamp was 50% higher than one of the common LED lamp. As a result of measuring life time, it was found that life time of common LED lamp was more about 3.5 fold than one of the fluorescent lamp. Considering these results, it's thought that common LED lamp is verified that energy saving is possible and using is possible as substitute for fluorescent lamp on board.

Influence of intake runner cross section design on the engine performance parameters of a four stroke, naturally aspirated carbureted SI engine

  • Singh, Somendra Pratap;Kumar, Vasu;Gupta, Dhruv;Kumar, Naveen
    • International Journal of Advanced Culture Technology
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    • v.3 no.1
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    • pp.1-12
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    • 2015
  • The current scenario of the transportation sector reflects the urgent need to address issues such as depletion of traditional fuel reserves and ever growing pollution levels. Researchers around the world are focussing on alternatives as well as optimisation of currently employed devices to reduce the pollution levels generated by the commonly used fuels. One such optimisation involves the study of air flow within the intake manifolds of SI engines. It is a well-known fact that alterations in the air manifolds of engines have a significant impact on the engine performance parameters, fuel consumption and emission levels. Previous works have demonstrated the impacts of runner lengths, diameter, plenum volume, taper angle of distribution manifolds and other factors on in-cylinder fluid motion and engine performance. However, a static setup provides an optimal configuration only at a specific engine speed. This paper aims to investigate the variations in the same parameters on a four stroke, naturally aspirated single cylinder SI engine through varying the cross section design over the intake runner with the aid of Computational Fluid Dynamics. The system consists of segments that form the intake runner with projections on the inside that allow various permutations of the intake runner segments. The various configurations provide the optimised fluid flow characteristics within the intake manifold at specific engine speed intervals. The variations such as turbulence, air fuel mixing are analysed using the three dimensional CFD software FLUENT. The results can be used further for developing an automated or manually adjustable intake manifold.