• Proceedings of the IEEK Conference
• /
• 2007.07a
• /
• pp.437-438
• /
• 2007

In this paper a embedded decoupling capacitor design with gap structure will be discussed. A novel structure is modeling and analization by High Frequency Structure Simulator (HFSS). Proposed capacitor have $2m{\times}2m$ in rectangular shape. The film thickness of copper/dielectric film/substrate is respectively 35um/20um/35um. A dielectric layer of BaTiO3/epoxy has the relative permittivity of 25. Compare of the planar decoupling capacitor, capacitance densities of this structure in the range of $55{\mu}F$/mm2 have been obtained with 50um gap while capacitance densities of planar structure $55{\mu}F$/mm2 in the same size. The frequency dependent behavior of capacitors is numerically extracted over a wide frequency bandwidth 500MHz-7GHz. The decoupling capacitor can work at high frequency band increasing the gap size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.101-101
• /
• 2007

We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

• ETRI Journal
• /
• v.23 no.1
• /
• pp.23-32
• /
• 2001

Examination of the statistical variation of integrated passive components is crucial for designing and characterizing the performance of multichip module (MCM) substrates. In this paper, the statistical analysis of parallel plate capacitors with gridded plates manufactured in a multilayer low temperature cofired ceramic (LTCC) process is presented. A set of integrated capacitor structures is fabricated, and their scattering parameters are measured for a range of frequencies from 50 MHz to 5 GHz. Using optimized equivalent circuits obtained from HSPICE, mean and absolute deviation is calculated for each component of each device model. Monte Carlo Analysis for the capacitor structures is then performed using HSPICE. Using a comparison of the Monte Carlo results and measured data, it is determined that even a small number of sample structures, the statistical variation of the component values provides an accurate representation of the overall capacitor performance.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.6
• /
• pp.1152-1162
• /
• 2011

In this paper, a single-phase DC-AC inverter using two embedded Z-source converters is proposed. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The output AC voltage of the inverter is obtained by the difference of output capacitor voltages of each converter. The output voltage of each converter take shape of the asymmetrical AC waveform centering zero voltage. Therefore, the proposed inverter can generate the same output voltage despite low VA rating L-C elements, compared to the conventional inverter using high DC voltage with AC ripple. To verify the validity of the proposed system, the PSIM simulation was achieved under the condition of rapid increase of DC source (110[V]${\rightarrow}$150[V]) and R-load (50[${\Omega}$]${\rightarrow}$300[${\Omega}$]). For controlling the voltage of the inverter system, the one-cycle controller was adopted. As results, the proposed inverter output the constant AC voltage (220[V]rms/60[Hz]) for all conditions. Also, the R-L load and nonlinear diode load were adopted for the proposed inverter loads, and we could know that the its output voltage characteristics were as good as the pure R-load. Finally, the RMS and THD of output AC voltage were examined for the different loads, input DC voltages and reference voltage signals.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.121-121
• /
• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.128-128
• /
• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.130-130
• /
• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.62-62
• /
• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• Proceedings of the KIPE Conference
• /
• 2000.07a
• /
• pp.90-94
• /
• 2000

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple transformer is bulky heavy and has low-efficiency. To improve this defect a high frequency switching inverter-type power supply has been investigated an developed. in recent years. But because of it's additional circuit and devices inverter-type power supply is more expensive than conventional one. In this paper The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction. Also transformer equivalent circuit model is derived by FEM analysis and parameter measurements. And the operation of proposed HVC embedded transformer is verified by simulation and experimental results.

• Proceedings of the KIEE Conference
• /
• 2001.04a
• /
• pp.293-296
• /
• 2001

A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect, a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction of Inverter-type power supply. Also, equivalent circuit mode] is derived by FEM analysis and impedance measurements. And the operation of proposed HVC embedded transformer is verified by simulations and experimental results.