• Title/Summary/Keyword: Elementwise Patterned Stamp

Search Result 4, Processing Time 0.02 seconds

The effect of wafer deformation on UV-nanoimprint lithography using an EPS(elementwise patterned stamp) (EPS(elementwise patterned stamp)활용 UV나노임프린트 공정에서의 웨이퍼 미소변형의 영향)

  • Sim Young-suk;Jeong Jun-ho;Sohn Hyonkee;Lee Eung-sug;Fang Lingmei;Lee Sang-chan
    • Journal of the Korean Vacuum Society
    • /
    • v.14 no.1
    • /
    • pp.35-39
    • /
    • 2005
  • In the UV-NIL process using an elementwise patterned stamp (EPS), which includes channels formed to separate each element with patterns, low-viscosity resin droplets with a nano-liter volume are dispensed on all elements of the EPS. Following pressing of the EPS, the EPS is illuminated with UV-light to cure the resin; and then the EPS is separated from several thin patterned elements on a wafer. Experiments on UV-NIL were performed on an EVG620-NIL. 50 - 100nm features of the EPS with 3m channels were successfully transferred to 4 in. wafers. Especially, the wafer deformation during imprint was analyzed using the finite element method (FEM) in order to study the effect of the wafer deformation on the UV-NIL using EPS.

Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp) (EPS(Elementwise Patterned Stamp)를 이용한 UV 나노임프린트 공정에서 웨이퍼 변형에 따른 잔류층 분석)

  • Kim Ki-Don;Sim Young-Suk;Sohn Hyonkee;Lee Eung-Sug;Lee Sang-Chan;Fang Lingmei;Jeong Jun-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.29 no.9 s.240
    • /
    • pp.1169-1174
    • /
    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

UV Nanoimprint Lithography using an Elementwise Patterned Stamp and Pressurized Air (Elementwise Patterned Stamp와 부가압력을 이용한 UV 나노임프린트 리소그래피)

  • Sohn H.;Jeong J.H.;Sim Y.S.;Kim K.D.;Lee E.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2005.06a
    • /
    • pp.672-675
    • /
    • 2005
  • To imprint 70-nm wide line-patterns, we used a newly developed ultraviolet nanoimprint lithography (UV-NIL) process in which an elementwise patterned stamp (EPS), a large-area stamp, and pressurized air are used to imprint a wafer in a single step. For a single-step UV-NIL of a 4' wafer, we fabricated two identical $5'\times5'\times0.09'(W{\times}L{\times}H)$ quartz EPSs, except that one is with nanopatterns and the other without nanopatterns. Both of them consist of 16 small-area stamps, called elements, each of which is $10\;mm\;\times\;10\;mm$. UV-curable low-viscosity resin droplets were dispensed directly on each element of the EPSs. The volume and viscosity of each droplet are 3.7 nl and 7 cps. Droplets were dispensed in such a way that no air entrapment between elements and wafer occurs. When the droplets were fully pressed between ESP and wafer, some incompletely filled elements were observed because of the topology mismatch between EPS and wafer. To complete those incomplete fillings, pressurized air of 2 bar was applied to the bottom of the wafer for 2 min. Experimental results have shown that nanopatterns of the EPS were successfully transferred to the resin layer on the wafer.

  • PDF

The effect of micro/nano-scale wafer deformation on UV-nanoimprint lithography using an elementwise patterned stamp (다중양각스탬프를 사용하는 UV 나노임프린트 리소그래피공정에서 웨이퍼 미소변형의 영향)

  • 정준호;심영석;최대근;김기돈;신영재;이응숙;손현기;방영매;이상찬
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2004.10a
    • /
    • pp.1119-1122
    • /
    • 2004
  • In the UV-NIL process using an elementwise patterned stamp (EPS), which includes channels formed to separate each element with patterns, low-viscosity resin droplets with a nano-liter volume are dispensed on all elements of the EPS. Following pressing of the EPS, the EPS is illuminated with UV light to cure the resin; and then the EPS is separated from several thin patterned elements on a wafer. Experiments on UV-NIL were performed on an EVG620-NIL. 50 - 70 nm features of the EPS were successfully transferred to 4 in. wafers. Especially, the wafer deformation during imprint was analyzed using the finite element method (FEM) in order to study the effect of the wafer deformation on the UV-NIL using EPS.

  • PDF