• Title/Summary/Keyword: Electronic wire

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Development of an Uplift Measurement System for Overhead Contact Wire using High Speed Camera (고속카메라를 이용한 전차선 압상량 검측 시스템 개발)

  • Park, Young;Cho, Yong-Hyeon;Lee, Ki-Won;Kim, Hyung-Jun;Kim, In-Chol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.864-869
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    • 2009
  • The measurement of contact wire uplift in electric railways is one of the most important test parameters to accepting the maximum permitted speed of new electric vehicles and pantographs. The contact wire uplift can be measured over short periods when the pantograph passes monitoring stations. In this paper, a high-speed image measurement system and its image processing method are being developed to evaluate dynamic uplift of overhead contact wires caused by pantograph contact forces of Korea Tilting Train eXpress (TTX) and Korea Train eXpress (KTX). The image measurement system was implemented utilizing a high-speed CMOS (Complementary Metal Oxide Semiconductor) camera and gigabit ethernet LAN. Unlike previous systems, the uplift measurement system using high speed camera is installed on the side of the rail, making maintenance convenient. On-field verification of the uplift measurement system for overhead contact wire using high speed camera was conducted by measuring uplift of the TTX followed by operation speeds at the Honam conventional line and high-speed railway line. The proposed high-speed image measurement system to evaluate dynamic uplift of overhead contact wires shows promising on-field applications for high speed trains such as KTX and TTX.

Silicon wire array fabrication for energy device (실리콘 와이어 어레이 및 에너지 소자 응용)

  • Kim, Jae-Hyun;Baek, Seung-Ho;Kim, Kang-Pil;Woo, Sung-Ho;Lyu, Hong-Kun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.440-440
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    • 2009
  • Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

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Development of High Strength and Low Loss Overhead Conductor(I) - Mechanical Properties (고강도 저손실 가공송전선의 개발(I) - 기계적 특성)

  • Kim, Byung-Geol;Kim, Shang-Shu;Park, Joo-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1152-1158
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    • 2005
  • New conductor is developed by using high strength nonmagnetic steel(NM) wire as the core of overhead conductor. This conductor is called ACNR overhead conductor(Aluminum Conductor Nonmagnetic Steel Reinforced). Formed by the combination of aluminum alloy wire and high strength nonmagnetic steel wire, it has about the same weight and diameter as conventional ACSR overhead conductor. To enhance properties beneficial in an electrical and mechanical conductor during the process of high strength nonmagnetic steel wire, we made a large number of improvements and modifications in the working process, aluminum cladded method, and other process. ACNR overhead conductor, we successfully developed, has mechanical and electrical properties as good as or even better than conventional galvanized wire. Microstructure of raw material M wire was austenite and then deformed martensite after drawing process. Strength at room temperature is about $180kgf/mm^2\~200kgf/mm^2$. NM wire developed as core of overhead conductor shows heat resistant characteristics higher than that of HC wire used as core of commercial ACSR overhead conductor, Strength loss was not occur at heat resistant test below $600^{\circ}C$. Fatigue strength of vibration fatigue is about $32kgf/mm^2\~35kgf/mm^2$ and that of tension-tension fatigue is $90kgf/mm^2\~120kgf/mm^2$ which is $50\~65\%$ of tensile strength.

The Fabrication and Characterization of Embedded Switch Chip in Board for WiFi Application (WiFi용 스위치 칩 내장형 기판 기술에 관한 연구)

  • Park, Se-Hoon;Ryu, Jong-In;Kim, Jun-Chul;Youn, Je-Hyun;Kang, Nam-Kee;Park, Jong-Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.3
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    • pp.53-58
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    • 2008
  • In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

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Feature Extraction using Discrete Wavelet Transform and Dynamic Time-Warped Algorithms in Wireless Sensor Networks for Barbed Wire Entanglements Surveillance (철조망 감시를 위한 무선 센서 네트워크에서 이산 웨이블릿 변환과 동적 시간 정합 알고리즘을 이용한 특징 추출)

  • Lee, Tae-Young;Cha, Dae-Hyun;Hong, Jin-Keun;Han, Kun-Hui;Hwang, Chan-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.4
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    • pp.1342-1347
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    • 2010
  • Various researches have been studied on WSN(wireless sensor network) for barbed wire entanglements surveillance applications such as industry facilities, security area, prison, military area, airport, etc. Currently, barbed wire entanglements surveillance is formed wire sensor network environment. Traditional wire sensor network guarantee high data transmission rate. Therefore, wire sensor network use fast fourier transform of data of high transmission rate for extraction of feature parameter. However, wireless sensor network in comparison with wire sensor network has very low data transmission rate. Therefore, wireless sensor network doesn't use fast fourier transform of wire sensor network for extraction of feature parameter. In this paper, proposed method use 1 level approximation coefficient of DTW(dynamic time-warped) algorithms based on DWT(discrete wavelet transform) for extraction of detection feature parameter and classification feature parameter for barbed wire entanglements surveillance. l level approximation coefficient have time information and frequency information of signal. Therefore, Dynamic time-warped algorithms based on discrete wavelet transform improve detection and classification of target rather than using energy of signal.

Experimental Study on The Propagation Characteristics of Lightning Surge According to Variation of Wire Length (배선 길이 변화에 따른 뇌서지 전파 특성에 대한 실험 연구)

  • Seo Ho-Joon;Rhie Dong-Hee
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.12
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    • pp.616-619
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    • 2004
  • Electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit and AC power lines are becoming more widely used. To achieve effective method of surge protection, there are needs for correlation between lightning surge and indoor wire length or installation height of indoor wire. The aim of this present work is to investigate the propagation characteristics of lightning surge according to variation of wire length. As a consequence, the maximum voltage at the end of the open wire in proportion to length of indoor wire. Therefore this result may be raw data for establishment of surge protection system.

Constant DC Capacitor Voltage Control based Strategy for Active Load Balancer in Three-phase Four-wire Distribution Systems

  • Win, Tint Soe;Tanaka, Toshihiko;Hiraki, Eiji;Okamoto, Masayuki;Lee, Seong Ryong
    • Journal of international Conference on Electrical Machines and Systems
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    • v.3 no.2
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    • pp.176-183
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    • 2014
  • Three-phase four-wire distribution systems are used for both three-phase three-wire loads and single-phase two-wire consumer appliances in South Korea, Myanmar and other countries. Unbalanced load conditions frequently occur in these distribution systems. These unbalanced load conditions cause unbalanced voltages for three-phase and single-phase loads, and increase the loss in the distribution transformer. In this paper, we propose constant DC capacitor voltage control based strategy for the active load balancer (ALB) in the three-phase four-wire distribution systems. Constant DC capacitor voltage control is always used in active power line conditioners. The proposed control strategy does not require any computation blocks of the active and reactive currents on the distribution systems. Balanced source-side currents with a unity power factor are obtained without any calculation block of the unbalanced active and reactive components on the load side. The basic principle of the constant DC capacitor voltage control based strategy for the ALB is discussed in detail and then confirmed by both digital computer simulations using PSIM software and prototype experimental model. Simulation and experimental results demonstrate that the proposed control strategy for the ALB can balance the source currents with a unity power factor in the three-phase four-wire distribution systems.

Analysis on the Characteristics of the Stranded Wire Disconnected by Bending Stress (구부림 피로에 의한 연선의 반단선 특성 해석)

  • Shong, Kil-Mok;Choi, Chung-Seog;Kim, Dong-Woo;Kwak, Hee-Ro
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.464-467
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    • 2003
  • In this paper, we analyzed on the characteristics of the stranded wire disconnected by bending stress. The stranded wire that used in the experiment are PVC insulated flexible cords(VCTFK) of $0.75mm^2,\;1.25mm^2,\;and\;2.0mm^2$. They are used to connect the load in low voltage. The stranded wires disconnected by bending stress were magnified with optical microscope. Using X-ray, the disconnected wire were photographed. we compared mechanical characteristics of the stranded wire between disconnected tendency and allowable current. On the mechanical strength of vinyl captyre ellipse type cords under bending stress, $1.25mm^2$ VCTFK was the strongest of them. When it was bended $826.3{\pm}7\;times$, it appeared the disconnected tendency that element wires of $1.25mm^2$ VCTFK are more about 1.67 times than element wires of $0.75mm^2$ VCTFK. In mechanical strength, $1.25mm^2$ VCTFK is higher about 1.7 times than $0.75mm^2$ VCTFK. Therefore, we found out that mechanical strength will be higher, if element wire is a lot. In comparison with bending stress, $1.25mm^2$ VCTFK is the strongest among samples, and then it is the most useful in wires of movable type.

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Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.221-225
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    • 2014
  • Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.