• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.704-709
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• 1998

Non-linear optical polymer based on poly (${\alpha}$-methylstyrene-co-maleic anhydride) (MSMA) substrate polymer was prepared by polymer reaction method and its thermal and electro-optic properties were examined. In the polymer reaction between MSMA substrate polymer and 2-[4-(4-nitrophenylazo)-N-ethylphenylamino]ethanol (DR1) chromophore, the degree of substitution of DR1 into MSMA was higher with the 4-dimethylaminopyridine (DMAP) as catalyst and 3-dicyclohexyl carbodiimide (DCC) as dehydrating agent (sample, MSMA-DC) than the one with just 4-dimethylaminopyridine as catalyst (sample, MSMA-D). The synthesized NLO polymer (MSMA-DC) exhibited electro-optic coefficient of 18 pm/V (632.8 nm) and glass transition temperature ($T_g$) of about $175^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.37 no.12
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• pp.1047-1052
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• 1993

The electronic spectra of enzyme-model organocobalt(Ⅲ) complexes containing completely or partially conjugated macrocyclic ligands were measured in various solvents to investigate the solvent effect on the charge transfer band for the axial cobalt-carbon bond by the extent of conjugation in the equatorial macrocyclic ring; completely conjugated, $CH_3CoL,\;C_6H_5CoL,\;CNCoL,\;CH_3CoL',\;CNCoL'$, partially conjugated $CH_3(py)Co(DH)_2, CH_3CoL＂$, unconjugated dienes, $[CH_3Co(1,4-CT)](ClO_4)_2$, and open ring, $CH_3Co(salen)$. The position of the charge transfer band which corresponds to the cobalt-carbon bond was shifted to a shorter wavelength as the polarity of solvent increased and the transition energy $(E_T)$ had a linear relationship with solvent polarity parameter, Z-value, only in the case of completely conjugated system. However, the linear correlation between $E_T$and Z was not observed for partially conjugated and open ring systems.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.95-99
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• 2018

High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over $2.8W/m{\cdot}K$ for transverse and $10W/m{\cdot}K$ for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to $13.5W/m{\cdot}K$ at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• Journal of the Korea Society of Computer and Information
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• v.29 no.7
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• pp.169-179
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• 2024

Currently, information technologies such as blockchain and metaverse are being innovatively developed in Korea and around the world. The government has defined the innovation of these cyber-related technologies as the fourth industrial revolution and presented the Digital New Deal as an important policy of the Korean version of the New Deal, and is implementing various policies and systems related to it. This situation is expected to affect the development of the real estate registration system in Korea. Moreover, as the Supreme Court is currently promoting the transition to a future registration system, it is necessary to examine whether blockchain technology, which allows parties to exchange value without a third party guaranteeing the transaction, can be used in the real estate registration system. In order to secure the credibility of the real estate registration as electronic information under the registration system that introduces electronic registration and blockchain system, the transparency of transaction identification and real estate registration details should also be recorded using the blockchain system as a way to prevent such crimes and legal disputes. As a solution, it is worth considering how to improve the reliability of transaction identification, recognize the actual examination rights of the registrar in the foundation system of the real estate register, and increase public trust by going through the notarization stage when recording rights such as real rights, and consider how to introduce a blockchain system at this stage to ensure integrity and reliability. In the stage before the current real estate registration and study system is converted to a blockchain system, the clarity, transparency, and consistency of the real estate registration entries with the actual real estate must be established so that the real estate study can finally be recognized as authoritative, thereby ensuring the trust of the transaction parties to the real estate study system that has adopted the blockchain system in the future, and bringing us closer to the goal of real estate transactions in the form of smart contracts between the parties who have trusted it based on transparency and integrity of real estate study in the real estate transaction market.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.412-419
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• 2024

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.131-142
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• 2002

The Langmuir adsorption isotherms of the under-potentially deposited hydrogen (UPD H) and the over-potentially deposited hydrogen (OPD H) at the poly-Pt/0.5M $H_2SO_4$ and 0.5 M LiOH aqueous electrolyte interfaces have been studied using cyclic voltammetric and ac impedance techniques. The behavior of the phase shift $(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1{\geq}{\theta}{\geq}0)$ at the interfaces. The phase-shift method, i.e., the phase-shift profile $({-\phi}\;vs.\;E)$ for the optimum intermediate frequency, can be used as a new electrochemical method to determine the Langmuir adsorption isotherms $({\theta}\;vs.\;E)$ of the UPD H and the OPD H for the cathodic $H_2$ evolution reactions at the interfaces. At the poly-Pt/0.5M $H_2SO_4$ aqueous electrolyte interface, the equilibrium constant (K) and the standard free energy $({\Delta}G_{ads})$ of the OPD H are $2.1\times10^{-4}$ and 21.0kJ/mol, respectively. At the poly-Pt/0.5M LiOH aqueous electrolyte interface, K transits from 2.7(UPD H) to $6.2\times10^{-6}$ (OPD H) depending on the cathode potential (E) and vice versa. Similarly, ${\Delta}G_{ads}$ transits from -2.5kJ/mol (UPD H) to 29.7kJ/mol (OPD H) depending on I and vice versa. The transition of K and ${\Delta}G_{ads}$ is attributed to the two distinct adsorption sites of the UPD H and the OPD H on the poly-Pt surface. The UPD H and the OPD H on the poly-Pt surface are the independent processes depending on the H adsorption sites themselves rather than the sequential processes for the cathodic $H_2$ evolution reactions. The criterion of the UPD H and the OPD H is the H adsorption sites and processes rather than the $H_2$ evolution reactions and potentials. The poly-Pt wire electrode is more efficient and useful than the Pt(100) disc electrode for the cathodic $H_2$ evolution reactions in the aqueous electrolytes. The phase-shift method is well complementary to the thermodynamic method rather than conflicting.

• Journal of the Mineralogical Society of Korea
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• v.30 no.2
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• pp.59-70
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• 2017

$SiO_2$ is one of the most abundant constituents of the Earth's crust and mantle. Probing its electronic structures at high pressures is essential to understand their elastic and thermodynamic properties in the Earth's interior. The in situ high-pressure x-ray Raman scattering (XRS) experiment has been effective in providing detailed bonding transitions of the low-z materials under extreme compression. However, the relationship between the local atomic structures and XRS features at high pressure has not been fully established. The ab initio calculations have been used to overcome such experimental difficulties. Here we report the partial density of states (PDOS) of O atoms and the O K-edge XRS spectra of ${\alpha}-quartz$, ${\alpha}-cristobalite$, and $CaCl_2$-type $SiO_2$ phases calculated using ab initio calculations based on the full-potential linearized augmented plane wave (FP-LAPW) method. The unoccupied O PDOSs of the $CaCl_2$-type $SiO_2$ calculated with and without applying the core-hole effects present significantly distinctive features. The unoccupied O p states of the ${\alpha}-quartz$, ${\alpha}-cristobalite$ and $CaCl_2$-type $SiO_2$ calculated with considering the core-hole effect present similar features to their calculated O K-edge XRS spectra. This confirms that characteristic features in the O K-edge XRS stem from the electronic transition from 1s to unoccupied 2p states. The current results indicate that the core-hole effects should be taken in to consideration to calculate the precise O K-edge XRS features of the $SiO_2$ polymorphs at high pressure. Furthermore, we also calculated O K-edge XRS spectrum for $CaCl_2$-type $SiO_2$ at ~63 GPa. As the experimental spectra for these high pressure phases are not currently available, the current results for the $CaCl_2$-type $SiO_2$ provide useful prospect to predict in situ high-pressure XRS spectra.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.127-133
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• 2011

Non-Alkali multicomponent $La_2O_3-Al_2O_3-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for thermal expansion coefficient, glass transition temperature, Young's modulus, Shear modulus and density are as follows: ${\alpha}(/^{\circ}C)=8.41{\times}10^{-8}x_1+5.72{\times}10^{-7}x_2+2.13{\times}10^{-7}x_3+1.09{\times}10^{-7}x_4+1.10{\times}10^{-7}x_5+1.15{\times}10^{-7}x_6+2.72{\times}10^{-8}x_7+2.41{\times}10^{-7}x_8-1.08{\times}10^{-8}x_1x_2+4.28{\times}10^{-8}x_3x_7-2.02{\times}10^{-8}x_3x_8-1.60{\times}10^{-8}x_4x_5-2.71{\times}10^{-9}x_4x_8-2.19{\times}10^{-8}x_5x_6-3.89{\times}10^{-8}x_5x_7$ $T_g(^{\circ}C)=7.36x_1+15.35x_2+20.14x_3+8.97x_4+13.85x_5+4.22x_6+28.21x_7-1.44x_8-0.84x_2x_3-0.45x_2x_5-1.64x_2x_7+0.93x_3x_8-1.04x_5x_8-0.48x_6x_8$ $E(GPa)=2.04x_1+14.26x_2-1.22x_3-0.80x_4-2.26x_5-1.67x_6-1.27x_7+3.63x_8-0.24x_1x_2-0.07x_2x_8+0.14x_3x_6-0.68x_3x_8+0.29x_4x_5+1.28x_5x_8$ $G(GPa)=0.35x_1+1.78x_2+1.35x_3+1.87x_4+9.72x_5+29.16x_6-0.99x_7+3.60x_8-0.48x_1x_6-0.50x_2x_5+0.08x_3x_7-0.66x_3x_8+0.94x_5x_8$ ${\rho}(g/cm^3)=0.09x_1+0.51x_2-4.94{\times}10^{-3}x_3-0.03x_4+0.45x_5-0.07x_6-0.10x_7+0.07x_8-9.60{\times}10^{-3}x_1x_2-8.20{\times}10^{-3}x_1x_5+2.17{\times}10^{-3}x_3x_7-0.03x_3x_8+0.05x_5x_8$ The optimal glass composition similar to the thermal expansion coefficient of Si based on these fitted models is $65.53SiO_2{\cdot}25.00Al_2O_3{\cdot}5.00La_2O_3{\cdot}2.07ZrO_2{\cdot}0.70MgO{\cdot}1.70SrO$.