• Current Optics and Photonics
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• v.7 no.2
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• pp.191-199
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• 2023

We propose a dual Fabry-Perot interferometer (DFPI) structure that combines two Fabry-Perot interferometers. The structure is designed to have spectral peaks in the red, green, and blue regions simultaneously, to be applicable to R, G, and B subpixels without any patterning process. The optimized structure has been fabricated on a glass substrate using a thermal evaporation technique. When the DFPI structure was attached to the quantum-dot color-conversion layer, the full width at half maximum values of the green and red spectra decreased by 47.29% and 51.07% respectively. According to CIE 1931 color space, the DFPI showed a 37.66% wider color gamut than the standard RGB color coordinate. Thus it was experimentally proven that the proposed DFPI structure improved color purity. This DFPI structure will be useful in realizing a display with high color purity.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1442-1444
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• 1995

In this study, we confirmed that the crystallinity and the mechanical properties of polycrystalline Silicon(poly-Si) deposited on the poly-oxide are better than those of poly-Si on the conventional sacrificial layers that is CVD oxide layer or PSG. But the etch rate of poly-oxide is poor than that of the CVD oxide layer or PSG. Therefore, to make the best use of small stress and fast etch rate, we fabricated the double oxide layer; 10%-thick poly-oxide on 90%-thick CVD oxide or PSG. To estimate structure deformation by stress, we fabricated the test structures; cantilever. bridge and ring/beam structure and estimated by SEM. As the results, all structure is expressed the deformed structure by residual stress(tensile stress) and the deformation of the structure layer on the double oxide layer is small compared with that of the structure layer on the CVD oxide layer or PSG. And, the etch rate of the double oxide layer is enhanced compared with that of the poly-oxide.

• The Journal of Korea Robotics Society
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• v.15 no.1
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• pp.62-69
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• 2020

This paper proposes a pattern recognition and classification algorithm based on a circular structure that can reflect the characteristics of the sEMG (surface electromyogram) signal measured in the arm without putting the placement limitation of electrodes. In order to recognize the same pattern at all times despite the electrode locations, the data acquisition of the circular structure is proposed so that all sEMG channels can be connected to one another. For the performance verification of the sEMG pattern recognition and classification using the developed algorithm, several experiments are conducted. First, although there are no differences in the sEMG signals themselves, the similar patterns are much better identified in the case of the circular structure algorithm than that of conventional linear ones. Second, a comparative analysis is shown with the supervised learning schemes such as MLP, CNN, and LSTM. In the results, the classification recognition accuracy of the circular structure is above 98% in all postures. It is much higher than the results obtained when the linear structure is used. The recognition difference between the circular and linear structures was the biggest with about 4% when the MLP network was used.

• Structural Engineering and Mechanics
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• v.13 no.2
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• pp.231-239
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• 2002

The problem of dynamic analysis of truss structures based on probability is studied in this paper. Considering the randomness of both physical parameters (elastic module and mass density) of structural materials and geometric dimension of bars respectively or simultaneously, the stiffness and mass matrixes of the elements and structure have been built. The structure dynamic characteristic based on probability is analyzed, and the expressions of numeral characteristics of inherence frequency random variable are derived from the Rayleigh's quotient. The method of structural dynamic analysis based on probability is developed. Finally, two examples are given.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.515-518
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• 1995

YSe1.83 was synthesized by vapor transport technique and its crystal structure was determined. The structure was isostructure of LaTe2-x, which was layered structure consisting of two-atom thick layers of YSe with distorted NaCl-type structure and one-atom thick layer of Se. The substructure of YSe1.83 was tetragonal with space group of P4/nmm and a=4.011(2) and c=8.261(3) Å with final R/Rw=6.4/6.9 %. The superstructure with asuper=2a, bsuper=6b and csuper=2c was found. The measurements of electronic and magnetic properties of this compound indicate that it is an electronic insulator and diamagnet.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.141.1-141.1
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• 2007

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.609-611
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• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09a
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• pp.571-574
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• 2003

This research is aimed to automate the generating process of the database from paper based table forms like this work. The registration table has so complicate table structures, ana in this research we used the registration tables as an example of general table structure understanding. We propose a table structure understanding system for some table types, and it has some steps. The first step is that the document images on paper are read from the image scanner. The second step is that a document image segments into some tables. In the third step, the character strings is extracted using image processing technology and the property of the character strings is determined. And the structured database is generated automatically. The proposed system consists of two systems. "Master document generation system" is used for the table form definition, and it doesn′t include the handwritten characters. "Structure analysis system for complete d table" is used for the written form, and it analyzes the table form filled in the handwritten character. We implemented the system using MS Visual C＋＋ on Windows, and it can get the correct extraction rate 98％ among 51 registration tables written by the different students.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.