• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.17-22
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• 2017

Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the $Mn^{3+}/Mn^{4+}$. Typically, the resistivity of $70.5{\Omega}{\cdot}cm$ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at $450^{\circ}C$ for 3 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.107-107
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• 2009

Micro pillar structure was investigated for the energy havesting applications. The micro pillar structures were investigated to find proper size of pillars. In this experiments, the aspect ratio between the height and diameter were changed to extract maximum peizoelectric coefficient. We proposed the idea and model for the energy harvesting systems based on the micro-pillar structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.481-481
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• 2007

The characteristics of slow wave structure employed for backward wave oscillator expected to be a high power microwave source are studied analytically. The slow wave structure is a sinusodially corrugated wall waveguide. The waveguide is designed and transmitted characteristics for microwave are measured in the air. There exist literatures on high efficiency of enhansed radiation from backward wave oscillators involving plasmastudied experimentally another results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.309-310
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• 2005

Generally, the dielectric constant and loss tangent are gotten by resonators. This paper presents analysis of the comparing the dielectric constant and loss tangent from the Ring, T and series gap structures. The T structure can be analyzed easily at wideband characteristic with simple design. the Ring can ignore the radiation loss from the open-ended effect. the Series gap can get more accurate permittivity than a Ring structure. The Used materials were dupont9599 LTCC ceramic and daeju0086 Ag.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.51-59
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• 2012

Piezoelectric langasite crystals have superior properties such as high temperature performance and high quality Q and can be applied in combustion pressure sensors and surface acoustic wave (SAW) filters. Crystal growth, crystal structure and properties of langasite group are reviewed, and the mechanism of piezoelectricity of langasite is presented based on the crystal structure and deformation under high pressure. Finally, for the discovery of new piezoelectric materials, this paper presents the role of the framework, and recommends the search of framework crystal structure, because the characteristic of the mechanism exists on the framework of the crystal structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.906-909
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• 2012

The address discharge characteristics of a open dielectric structure compared with the conventional panel structure are investigated by measuring the discharge firing voltage. The open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. Due to the changes in the discharge firing characteristics of the open dielectric structure between the two sustain electrodes, the conventional reset waveform including the address waveform needs to be modified. The modified driving waveform suitable for the open dielectric structure is proposed and examined in AC PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.314-317
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• 2002

Since the early work of Tersoff and Hamann on the theory of the scanning tunneling microscope (STM), many theoretical approaches have been developed in order to gain further physical insight into the real space image that this technique provides. In this Paper, the STM image of Carbon nanotubes (CNT's) was calculated through the theoretical study. The optimized structure of CNT's was simulated using Brenner's hydrocarbon potential. The structure of simulation is (5. 5) armchair CNT and (10. 0) zigzag CNT. Also we have used that the extended Huckel tight binding (EHTB) theory already provides a fairly good qualitative description of the main processes that control the final contrast in the STM image. we found that the shape of the calculated images is hardly dependent on the exact electronic charge distribution at the surface. The STM images are not too sensitive to the precise electronic structure but, rather, they reflect its qualitative features. As a result of the simulation, The STM images of CNT's and the electronic density distribution were investigated. It found that the EHTB theory is appropriate for STM image calculation and that the STM images are in agreement with the result of Experiment.

• Journal of Korean Society of Archives and Records Management
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• v.12 no.2
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• pp.29-50
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• 2012

This study aims to analyze electronic records research domains and trends and to suggest future direction of electronic records research in Korea. One hundred and sixty one articles published in seven domestic journals from 1999 to 2011 were statistically analysed to find out the productivity of electronic records research. Analysis of intellectual structure using descriptor profiling and author profiling as a technique of text mining were performed with those same papers. Some proposals on the future research direction in this field were made.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.309-312
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• 2004

The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).