• 청정기술
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• 제14권4호
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• pp.265-270
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• 2008

본 연구는 전자기기 모듈의 공기 냉각용 정렬 배열된 핀-휜 열교환기에서 휜 형상의 변화가 유동 및 열전달에 미치는 영향을 수치적으로 해석하였다. 휜 단면의 기하학적 형상은 세 가지로서 원형, 타원형, 그리고 날개형이었다. 취급된 모든 휜의 단면적과 높이는 서로 동일하지만, 그 표면적만은 서로 달랐다. 그 결과, 휜의 표면적, 열전달계수, 그리고 열전달 성능은 휜의 형상에 크게 의존하였다. 적절한 형상을 갖는 휜의 열전달 성능은 세 가지 형태의 핀-휜 중에서 날개형 핀-휜이 가장 우수하였다. 이러한 결과로부터 공기의 유량증가측은 휜의 밀도증가 없이 적절한 핀-휜의 형상변화만으로도 핀-휜 열교환기의 냉각성능을 크게 향상 시킬 수 있음을 알 수 있었다.

• 센서학회지
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• 제7권3호
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• pp.211-217
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• 1998

#7740 interlayer를 적용하여 Si 기관과 ITO가 코팅된 #7059 기판을 정전 열 접합하였다. SIMS 분석을 통하여 #7740 interlayer 내에 존재하는 $Na^{+}$ 이온들의 열-전기적 이동이 접합 메카니즘으로 작용함을 확인하였다. 우수한 접합을 얻기 위한 온도 및 전압 범위는 각각 $180{\sim}200^{\circ}C$ and $50{\sim}70V_{dc}$(10분)으로 나타났다. 이러한 저온 Si-ITO 코팅 유리 간의 접합 공정은 전계 방출 표시 소자의 패키징에 유용하게 이용될 수 있을 것으로 기대된다.

• 수산해양교육연구
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• 제16권2호
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• pp.210-217
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• 2004

Cooling technology has been a vital prerequisite for the rapid, if not explosive, growth of the electronic equipment industry. This has been especially true during the last 20 years with the advent of intergrated circuit chips and their applications in computers and related electronic products. The purpose of this study is to develop a telecommunication equipment cooling system using a thermoelectric module combined with cooling fan. Thermoelectric module is a device that can perform cooling only by input of electric power. In the present study, the cooling package using the thermoeletric module has been developed to improve the thermal performance. The cooling characteristics of the electronic chip was placed into the subrack and it can be rapidly assembled or disassembled in the equipment rack. As a preliminary experiment, the cooling performances between a conventional way using a cooling fin and a proposed method applying the thermoelectric module was comosed and analyzyed. The cooling performance at a simulated electronic component packaging a thermomodule operated well.

• 한국세라믹학회지
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• 제46권1호
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• pp.30-34
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• 2009

A Sand blasting technology has been used to address via and trench processing of glass wafer of optic semiconductor packaging. Manufactured sand blast that is controlled by blast nozzle and servomotor so that 8" wafer processing may be available. 10mm sq test device manufactured by Dry Film Resist (DFR) pattern process on 8" glass wafer of $500{\mu}m's$ thickness. Based on particle pressure and the wafer transfer speed, etch rate, mask erosion, and vertical trench slope have been analyzed. Perfect 500 um tooling has been performed at 0.3 MPa pressure and 100 rpm wafer speed. It is particle pressure that influence in processing depth and the transfer speed did not influence.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1499-1505
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• 2003

Rapid development of electronic technology requires small size, high density packaging and high power of electronic devices. So, in this paper, characteristics on oscillating heat pipe according to operating conditions(environment temperature, charging ratio of working fluid, inclination) based on experimental study was investigated. From the experimental results, $25^{\circ}C$environment temperature), R-141b(working fluid)40%(charging ratio) was best performace at others of inclination angle and The top heating mode of OCHP performed 80% efficiency of the bottom heating mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.442-446
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• 1999

Melting behavior and bridge phenomenon of solder paste, which is essential for surface mount technology in packaging, were investigated. solder paste of Sn-37%Pb was printed on Sn-coated Cu-pattern of PCB, and heated over melting point. Melting behavior of the paste was observed using CCD-camera. In order to modelize the melting and agglomeration phenomena of the paste, two solder balls of 0.76mm diameter were used. As experimental results, the paste start to melt from the margin of the printed shape. The hight of the melted paste decreased from 270 $\mu$m to 200 $\mu$m firstly, and finally recovered to 250 $\mu$m. During the melting procedure, pores were evolved from the molten paste. Bridge Phenomenon of the molten Paste depends upon the pitch of the pattern.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국포장학회지
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• 제23권2호
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• pp.89-95
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• 2017

전 세계적으로 커피 시장이 매년 커지고 있고 이에 따라 커피 포장지의 수요 역시 증가하고 있지만 제품에 직접적으로 접촉하게 될 씰란트 층에 사용되는 PE 재질과 PP 재질이 커피 향에 미치는 영향에 대한 연구는 부족한 실태이다. 본 연구에서는 전자코(Electronic nose)와 기체크로마토그래피와 질량분석기(GC/MS)를 이용하여, PP와 PE 재질의 파우치에 커피를 담아 향기 패턴과 향 물질의 변화를 연구해 보았다. 저장기간에 따른 휘발성분 분석 결과, 커피의 향기 성분 분석에 적합한 지표 물질은 pyridine이었다. 추가적으로 온도($4^{\circ}C$, $25^{\circ}C$ and $40^{\circ}C$)와 탈산소제의 유무에 따른 향기 패턴 변화 역시 관찰하였다. 그 결과, 미미하게나마 PP계열 포장재가 PE계열 포장재보다 보향성이 좋았으나 재질에 의한 성능의 변화는 거의 없다는 결과를 얻었다. 오히려 재질보다는 온도에 의한 향기 패턴 변화가 지배적이었다. 냉장 유통($4^{\circ}C$)이 가장 좋은 보관 온도였고 짧은 기간 내에 판매가 이루어지는 것이 이상적이다.

• Journal of electromagnetic engineering and science
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• 제14권3호
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• pp.284-292
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• 2014

This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.315-321
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• 2005

교류자기장에 의한 유도가열체를 이용하여 LCD 평판 디스플레이 패널의 가열을 최소화하면서 IC 칩을 실장시킬 수 있는 COG 접속기술에 대해 연구하였다. 크기 5mm${\times}$5mm, 두께 $600{\mu}m$의 Cu 도금막으로 제조한 유도가열체에 14 kHz, 230 Oe의 교류자기장을 인가시 60초 이내에 유도가열체의 온도가 Sn-3.5Ag 무연솔더의 리플로우에 필요한 $250^{\circ}C$에 도달하였으며, 유도가열체로부터 2 mm 떨어진 부위에서부터 기판의 온도는 $100^{\circ}C$ 이하로 유지되었다. 이와 같은 Cu 도금막 유도가열체에 14 kHz, 230 Oe의 교류자기장을 120초 동안 인가하여 Sn-3.5Ag 솔더범프를 리플로우 시켜 COG 실장을 하는 것이 가능하였다.