• 제목/요약/키워드: Electronic information room

검색결과 156건 처리시간 0.033초

임베디드 커패시터의 응용을 위해 CCL 기판 위에 평가된 BMN 박막의 특성 (The Properties of $Bi_2Mg_{2/3}Nb_{4/3}O_7$ Thin Films Deposited on Copper Clad Laminates For Embedded Capacitor)

  • 김혜원;안준구;안경찬;윤순길
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
    • /
    • pp.45-45
    • /
    • 2007
  • Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

  • PDF

Gaussian 혼합모델을 이용한 영상기반 화재검출 알고리즘 (Video Based Fire Detection Algorithm using Gaussian Mixture Model)

  • 박장식;김현태;유윤식
    • 한국전자통신학회논문지
    • /
    • 제6권2호
    • /
    • pp.206-211
    • /
    • 2011
  • 본 논문에서는 Gaussian 혼합모델을 이용한 영상기반 화재검출 알고리즘을 제안한다. CCTV로부터 입력되는 영상으로부터 배경영상을 추출한 후 입력영상과 배경영상간의 차신호로부터 전경영상을 분리한다. 분리된 전경영상은 배경영상에 대하여 변화가 생긴 후보영역으로 간주하고 후보영역에 대하여 Gaussian 혼합모델 기법을 적용하여 연기 또는 화염의 특성을 갖는 영역을 화재로 인식한다. 실험 결과를 통하여 제안하는 화재검출 알고리즘이 실내에서의 화염 및 연기를 검출할 수 있음을 보인다.

Zn(HPB)2를 Hole Blocking Layer로 이용한 OLEDS의 특성 연구 (Study on Properties of OLEDS using Zn(HPB)2 as Hole Blocking Layer)

  • 김동은;김두석;이범종;권영수
    • 한국전기전자재료학회논문지
    • /
    • 제18권12호
    • /
    • pp.1139-1142
    • /
    • 2005
  • Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The IP and EA were 6.5 eV and 3.0 eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 450 nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emiting material layer(EML) and cathode, and between hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

(Bi,Nd)(Fe,Ti)$O_3$ 다강체 세라믹 및 박막의 상변화 거동 (Phase Evolution Behavior of Multiferroic (Bi,Nd)(Fe,Ti)$O_3$ Ceramics and Thin Films)

  • 김경만;양판;이재열;이희영
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
    • /
    • pp.231-232
    • /
    • 2008
  • The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

  • PDF

핵형 분류를 위한 패턴 분류기 구현 (The Implementation of Pattern Classifier or Karyotype Classification)

  • 엄상희;남기곤;장용훈;이권순;정형환;김금석;전계록
    • 대한의용생체공학회:학술대회논문집
    • /
    • 대한의용생체공학회 1997년도 추계학술대회
    • /
    • pp.133-136
    • /
    • 1997
  • The human chromosome analysis is widely used to diagnose genetic disease and various congenital anomalies. Many researches on automated chromosome karyotype analysis has been carried out, some of which produced commercial systems. However, there still remains much room or improving the accuracy of chromosome classification. In this paper, We propose an optimal pattern classifier by neural network to improve the accuracy of chromosome classification. The proposed pattern classifier was built up of multi-step multi-layer neural network(MMANN). We reconstructed chromosome image to improve the chromosome classification accuracy and extracted three morphological features parameters such as centromeric index(C.I.), relative length ratio(R.L.), and relative area ratio(R.A.). This Parameters employed as input in neural network by preprocessing twenty human chromosome images. The experiment results show that the chromosome classification error is reduced much more than that of the other classification methods.

  • PDF

SrBi2Ta2O9SiN/Si 구조를 이용한 MFISFET의 제작 및 특성 (Fabrication and Properties of MFISFET using SrBi2Ta2O9SiN/Si Structures)

  • 김광호
    • 한국전기전자재료학회논문지
    • /
    • 제15권5호
    • /
    • pp.383-387
    • /
    • 2002
  • N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

ZnO와 Al-doped ZnO 박막의 표면 형상과 전기·광학적 특성에 미치는 Wet Etching 시간의 영향 (The Effect of Wet Etching Time on the Surface Roughness and Electrical and Optical Properties of ZnO, and Al-doped ZnO Films)

  • 김민성
    • 한국전기전자재료학회논문지
    • /
    • 제26권3호
    • /
    • pp.194-197
    • /
    • 2013
  • We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

$Zn(HPB)_2$를 Hole blocking layer로 이용한 OLEDs의 특성 연구 (A Study on Properties of OLEDs using $Zn(HPB)_2$ as hole blocking layer)

  • 김동은;김병상;권오관;이범종;권영수
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
    • /
    • pp.447-448
    • /
    • 2005
  • Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The JP, EA and Eg were 6.5eV, 3.0eV and 3.5eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 4S0nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emitting material layer(EML) and cathode, and hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

  • PDF

Interaction of Di-Methylaluminum Groups with Hydroxyl Groups on a Fully Hydroxyl-Terminated Si (001) Surface

  • Kim, Dae-Hee;Kim, Dae-Hyun;Kim, Yeong-Cheol;Seo, Hwa-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • 제11권1호
    • /
    • pp.11-14
    • /
    • 2010
  • The interaction of -$Al(CH_3)_2$ with -OH on a fully OH-terminated Si (001) surface was studied using density functional theory. Two sites for $Al(CH_3)_3$ to react with the -OH on the surface were identified. The $-Al(CH_3)_2$ product energetically favored the dimer-row site rather than the inter-row site because the Al atom of $-Al(CH_3)_2$ at the dimer-row site was attracted by the lone pair electrons of the O atom in the neighboring -OH. The energy barrier for the transfer of the $-Al(CH_3)_2$ between the two sites was 0.11 eV, and therefore, the $-Al(CH_3)_2$ at the inter-row site can easily transfer to the dimer-row site at room temperature.

실내 렌티큘러 스티커를 이용한 위치기반 시스템 개발 (Development of Location Based System using Indoor Lenticular Sticker)

  • 정승혁
    • 한국전자통신학회논문지
    • /
    • 제14권3호
    • /
    • pp.601-606
    • /
    • 2019
  • 렌티큘러 위치기반 시스템은 지상 및 실외중심의 지역, 건물, 선박, 지하 등 실내에 있는 사용자가 스스로 자신의 위치를 실시간으로 알릴 수 있는 위치정보 기술이다. 본 논문에서는 이전의 실내 위치 인식기술의 한계성과 문제점을 분석하고, 이용자 중심의 위치서비스 방법을 제안한다. 제안된 방법은 렌티큘러 스티커, 데이터베이스(DB) 수집 및 분석기술, 측위시스템으로 구성되어 있고, 측위오차기반 서비스를 실행하기 위한 기반 인프라로 활용될 수 있을 것이며, 실내 렌티큘러를 이용한 위치기반시스템 개발을 통하여 사용자 중심의 측위 정확도 향상뿐만 아니라, 각종 재난안전 상황에서 신속한 구조활동에 사용자 중심의 위치기반 시스템으로 활용할 수 있을 것이다.