• 한국정보통신학회논문지
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• 제13권9호
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• pp.1787-1794
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• 2009

본 논문에서는 거실에서의 가족이 즐길 수 있는 IPTV 게임에 활용될 수 있으며, 유년기 자녀들의 게임 중독을 막을 수 있는 텐저블 전자 주사위 인터페이스를 제안한다. 제안된 텐저블 전자 주사위 인터페이스는 실제 주사위와 가능한 유사하게 설계되어 직접적이고 직관적인 조작으로 사용자들이 사용할 수 있도록 하였다. 제안된 인터페이스는 외부 장치를 필요로 하지 않는 자립식(self-contained) 장치이다. 실험을 통해 제안된 주사위 인터페이스가 PC나 IPTV 환경에서 동작하는 게임에 효과적으로 적용될 수 있음을 확인할 수 있다. 앞으로 이 장치를 현재 개발중인 IPTV 게임 등에 적용하여 실용성을 검증할 예정이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.169-169
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• 2016

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.106-108
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• 2002

The composites were fabricated 61vol.% $\beta-SiC$ and 39vol.% $TiB_2$ powders with the liquid forming additives of l2wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C,\;1800^{\circ}C$ for 4 hours respectively. The result of Phase analysis of composites by XRD revealed $\alpha-SiC$(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the Young's modulus showed the highest value of 92.9701% and 92.884Gpa for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.491-496
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• 2003

This paper proposes modeling of human behavior and a method of finding irregular human behavior. At first, human behavior model is proposed by paying attention to habitual human behavior at home. Generally, it is difficult to obtain the information of individual life pattern because of high cost for setting sensors such as cameras to observe human action. Therefore we capture turning on/off consumer electronic equipments as actual human behavior action, where some or many consumer electric equipments were used such as television, room light, video and so on in our daily life. Noting that are some relations between turning on/off those consumer electric equipments and our action, we proposes how to construct a human behavior knowledge by analyzing human behavior based on observation of human habitual life. Also an algorithm to identify on find irregular behavior different from habitual life behavior are described. Finally, the significance of the proposed method is shown by some experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.88-88
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.138-138
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Al (AZOB) films was investigated. AZOB films were deposited on PC substrates by DC magnetron sputtering. The thickness range of films were from 300 nm to 800 nm to identified as increasing thickness, stress between substrate and AZOB film. The. average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $1.58\times10^{-3}\Omega$-cm was obtained. We presented that a AZOB film of 500 nm was optimization to obtain a high transmittance and conductivity.

• Nuclear Engineering and Technology
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• 제49권7호
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• pp.1489-1494
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• 2017

The use of a room-temperature gamma spectrometer is an issue in environmental radiation monitoring. To monitor radionuclides released around a nuclear power plant, suitable instruments giving fast and reliable information are required. High-pressure xenon (HPXe) chambers have range of resolution and efficiency equivalent to those of other medium resolution detectors such as those using NaI(Tl), CdZnTe, and $LaBr_3:Ce$. An HPXe chamber could be a cost-effective alternative, assuming temperature stability and reliability. The CEA LIST actively studied and developed HPXe-based technology applied for environmental monitoring. Xenon purification and conditioning was performed. The design of a 4-L HPXe detector was performed to minimize the detector capacitance and the required power supply. Simulations were done with the MCNPX2.7 particle transport code to estimate the intrinsic efficiency of the HPXe detector. A behavioral study dealing with ballistic deficits and electronic noise will be utilized to provide perspective for further analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.