• Title/Summary/Keyword: Electronic devices

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International Standardization of Intelligent Broadband Communication of Train (철도차량 지능형 광대역 통신망의 국제표준화 동향)

  • Hwang, Hyeon-Chyeol;Lee, Ho-Yong;Cho, Bong-Kwang;Kwak, Jae-Ho
    • Proceedings of the KSR Conference
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    • 2011.10a
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    • pp.1027-1034
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    • 2011
  • Electronic devices in railway vehicle perform various functions such as not only braking and propulsion but also monitoring of vehicle condition, on-line diagnosis, and passenger information service, etc. These devices, distributed in vehicle, should be efficiently connected so as to properly perform the functions. IEC (International Electro-Technical Commission) standardized train communication network (TCN) as IEC 61375-1, -2. TCN can reduce the interconnecting work load by reducing the number of wire-line, compared with existing hard-wire connection, and it brings the efficient control by enabling various devices to share the information. But existing TCN can not satisfy the increasing service demands like passenger internet access and CCTV surveillance, etc. In this paper, we investigate ECN (Ethernet Consist Network) and ETN (Ethernet Train Backbone) which are proposed to satisfy these demands and in the process of standardization by IEC TC9 WG43.

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Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.733-737
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    • 2011
  • This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

Embedded Passives (내장형 수동소자)

  • 이호영
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.55-60
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    • 2002
  • The recent trend in electronic devices has been towards light weight, low cost, high performance and improved reliability. Passive components are very important parts of microelectronic devices. The number of passive components used in hand held devices and computers continue to increase. To achieve improvements in costs, component density, performance, and reliability, embedding of these passive components into the printed circuit boards (PCBs) is required. This paper introduces the embedding of passive components, and discusses the remained challenges in the commercialization of this technique.

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On-chip Decoupling Capacitor for Power Integrity (전력 무결성을 위한 온 칩 디커플링 커패시터)

  • Cho, Seungbum;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.1-6
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    • 2017
  • As the performance and density of IC devices increase, especially the clock frequency increases, power grid network integrity problems become more challenging. To resolve these power integrity problems, the use of passive devices such as resistor, inductor, and capacitor is very important. To manage the power integrity with little noise or ripple, decoupling capacitors are essential in electronic packaging. The decoupling capacitors are classified into voltage regulator capacitor, board capacitor, package capacitor, and on-chip capacitor. For next generation packaging technologies such as 3D packaging or wafer level packaging on-chip MIM decoupling capacitor is the key element for power distribution and delivery management. This paper reviews the use and necessity of on-chip decoupling capacitor.

Entangled-Mesh Graphene for Highly Stretchable Electronics

  • Han, Jae-Hyeon;Yeo, Jong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.351.1-351.1
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    • 2016
  • While conventional electronic devices have been fabricated on the rigid and brittle Si based wafer as a semiconducting substrate, future devices are increasingly finding applications where flexibility and stretchability are further integrated to enable emerging and wearable devices. To achieve high flexibility and stretchability, various approaches are investigated such as polymer based conducting composite, thin metal films on the polymer substrate, and structural modifications for stretchable electronics. In spite of many efforts, it is still a challenge to identify a solution that offers both high stretchability and superior electrical properties. In this paper, we introduce a highly stretchable entangled-mesh graphene showing a potential to address such requirements as stretchability and good electrical performance. Entangle-mesh graphene was synthesized by CVD graphene on the Cu foil. To analyze the mechanical properties of entangled-mesh graphene, endurance and stretching tester have been used.

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Resolution and Adhesion Properties of Solder Resist for Printed Circuit Board (인쇄회로기판용 solder resist의 해상성과 밀착력)

  • Chol, Sung-Ho;Hwang, Seong-Jin;Kim, Hyung-Sun
    • Korean Journal of Materials Research
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    • v.17 no.12
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    • pp.676-681
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    • 2007
  • According to progress rapidly digitalization, networked and mobilization of electronics industry, there are demands for being smaller, thinner, more light, and more efficient complex functions of electronic devices which are wireless devices, semi-conductors, packages and mobile devices. Therefore, the solder resist on a printed circuit board have been required with the high resolution and the eco-friendly materials in the surface treatments such as high heating process and coating process with electrolysis. In this study, the photoinitiator initiator and monomers of the solder resist were prepared with their contents for reducing the occurrence of the under-cut. We investigated the sample surface by UV/VIS spectrometer, FT-IR, OM after HASL and ENIG process. From our results, it is possible to get a high adhesion of resist with optimal contents between the photoinitiator initiator and monomers after surface treatments.

Service Delivery Agent System for Mobile Devices

  • Jeong, Seob-Yoon;Lee, Ki-Hyun;Geun, Sik-Jo
    • Proceedings of the Korea Inteligent Information System Society Conference
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    • 2001.01a
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    • pp.198-201
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    • 2001
  • Recently the wireless-internet has been spreading extensively. People are spending a large part of their time gaining access to information using a mobile device. With the rapid growth of on-line Electronic Commerce, the use of mobile devices creates a new paradigm that provides users with location-independent real time service. Although this new paradigm does have some advantages, limited process speed, low bandwidth, the low battery capacity of mobile devices, and a high rate of wireless network errors causes many overhead expenses during service time with the server. In this paper, we suggest an autonomous service delivery system, which provides mobile agent capability to users that cannot maintain a connection. We have developed the system based on java mobile agent technology. Using this system, we can provide more effective service to users when the user is sending requirements for service through a mobile device that has limited resources. Furthermore we can manage the contact server dynamically when new services are added.

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Nanostructuring of Semi-conducting Block Copolymers: Optimized Synthesis and Processing for Efficient Optoelectronic Devices

  • Hadziioannou, Georges
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.74-75
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    • 2006
  • In organic opto-electronic applications, such as light emitting diodes (LEDs) and photovoltaic devices (PVDs), the morphology of the active layer is of crucial importance. To control the morphology of the active layer the self-assembling properties of block copolymers was used. Several rod-coil semiconducting diblock copolymers consisting of a conjugated block and a second coil block functionalized with electron transporting and/or accepting materials (such as $C_{60}$) were synthesized. The conjugated block acting as light absorbing, electron donating and hole transporting material. The donor/acceptor photovoltaic devices performance with active layer the above mentioned semiconducting block copolymers will be presented.

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Fabrication and Electrical Properties of Highly Organized Single-Walled Carbon Nanotube Networks for Electronic Device Applications

  • Kim, Young Lae
    • Journal of the Korean Ceramic Society
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    • v.54 no.1
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    • pp.66-69
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    • 2017
  • In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

Multilayer White Organic Light-Emitting Diodes with Blue Fluorescent and Red Phosphorescent Materials

  • Seo, Ji-Hoon;Kim, Jun-Ho;Lee, Kum-Hee;Kim, You-Hyun;Kim, Woo-Young;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1067-1070
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    • 2006
  • We have demonstrated highly efficient WOLED with two separated emissive layers using a blue fluorescent dye and a red phosphorescent dye. The maximum luminous efficiency of the device was 11.2 cd/A at $20\;mA/cm^2$ and $CIE_{x,y}$ coordinates varied from (x = 0.33, y = 0.37) at 6V to (x = 0.25, y = 0.33) at 14V.

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