• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.22-28
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• 2017

In modern electronic warfare, a variety of devices are being operated in the fields for the purposes of communication and surveillance. Therefore, if such devices work in the same band, interference may occur and affect each other. Regarding L-band in which various devices including radar systems are operating, interference from existing devices may affect new ones in the band. In this paper, we estimate a probability distribution of the interference environment in L-band from the selected measurement data, which is fundamental for the mathematical analysis. After selecting the candidates of probability distribution, we suggest the best one from the group. The results of this study are expected to be utilized as fundamental data for the mathematical approach to the L-band interference environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.9-14
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• 1996

The dependence of microstructural and optical properties of Ag-In-Sb-Te thin films on annealing heat-treatments was studied. It was found from the present work that the increase of reflectance after annealing heat-treatment is related with phase change of Ag-In-Sb-Te thin film from amorphous state to crystalline phases which involve Sb crystalline phase and AgInTe$_2$ stoichiometric phase. On the other hand, the reflectance is decreased after high temperature annealing (above 450$^{\circ}C$), due to the morphology .mange of film surface. For the purpose of practical application(erasable optical disk), we fabricated quadrilayered Ag-In-Sb-Te alloy disk, and annealed it with continuous laser beam. As result of this laser\ulcorner annealing treatment, we found that the increment of reflectance is 9.3% at 780nm wavelength. It might be considered that Ag-In-Sb-Te alloy optical disk is the big promising candidate for the erasable optical memory medium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.373-379
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• 2002

We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.109-113
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• 2011

In intelligent subway systems, UWB-based WiMedia D-MAC Protocol can be considered to send and receive multimedia data which requires high data rate. However, network devices which do not exist within 10 meters, the limited communication rage, can not communicate with each other because WiMedia does not support multi-hop communications. In this paper, we developed the algorithm to select a relaying device for multi-hop routing on WiMedia networks. In the first step, each device acquires information of neighbors through beacon and decides whether it is a normal or relaying device using the acquired information. In the next step, all devices can create the 2-hop routing table using the information received via relaying devices and the whole routing table for all devices on networks, eventually.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.927-934
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• 2019

Recently, mobile devices have evolved into small computers with various functions according to user requirements. Careful attention must be paid to the design of the power supply network for the stable operation of the application processor (AP), the wireless communication modem, the high performance camera, and the various interfaces of the mobile device to implement various functions of the mobile device. In this paper, we analyzed and verified the method of optimizing the design parameters such as the position, capacity, and number of decoupling capacitors to meet the target impedance required by the driver IC chip to ensure the stability of the power supply network of mobile devices that should be designed as wiring type due to mounting density limitation. The proposed wired power supply network design method can be applied to various applications including high-speed signal transmission line in addition to mobile applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.1
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• pp.294-298
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• 2021

Recently, many electronic devices have been integrated with various kinds of wireless sensor network technologies that have been enabled with wireless network connections. These wireless sensor network devices have adopted various kinds of wireless network technologies. On the other hand, because each wireless network technology has its advantages and disadvantages, the target and purposes should be considered carefully at the beginning of the development. In particular, the approach to the magnetic sensor should be considered carefully because it has its own characteristic compared to general sensors. The magnetic field generates nonlinear data. This paper introduces the design aspects to reflect low cost and wearable devices to use in a wireless sensor network. In addition, this paper addresses how to select proper sensor network technology. As a result, wireless sensor network devices were integrated using Zigbee and showed the performance of the throughput.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.99-108
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• 2023

Currently, semiconductor manufacturing industry heavily relies on a wide range of high global warming potential (GWP) gases, particularly during etching and cleaning processes, and their use and relevant carbon emissions are subject to global rules and regulations for achieving carbon neutrality by 2050. To replace high GWP gases in near future, dry etching using alternative low GWP gases is thus being under intense investigations. In this review, we report a current status and recent progress of the relevant research activities on dry etching processes using a low GWP gas. First, we review the concept of GWP itself and then introduce the difference between high and low GWP gases. Although most of the studies have concentrated on potentially replaceable additive gases such as C₄F₈, an ultimate solution with a lower GWP for main etching gases including CF₄ should be developed; therefore, we provide our own perspective in this regard. Finally, we summarize the advanced dry etch process research with low GWP gases and list up several issues to be considered in future research.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.3
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• pp.539-544
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• 2024

This paper examines the necessity and direction of digital literacy education as university education in the AI era. Digital literacy can be considered universal education about everyday culture in a digital environment, and its scope is expanding to cultivate the competencies necessary for citizens of a digital society, rather than simply the ability to use digital devices. In this paper, the university liberal arts curriculum has strengthened the information literacy area to reflect the changes of the times, but it is presented as a problem that it is still focused on the technical aspects of learning how to use digital devices and specific programs. It was suggested that the direction of digital literacy education in universities should not be limited to the technical and instrumental aspects of using digital devices, but that it would be desirable to focus on digital ethics considering the social impacts that may arise from the use of digital devices.

• Journal of radiological science and technology
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• v.22 no.2
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• pp.33-39
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• 1999

This paper included a data analysis of the unit of medical devices using mainternance recording card that had medical devices of unit failure mode, hospital of failure mode and MTBF. The results of the analysis were as follows : 1. Medical devices of unit failure mode was the highest in QC/PM such A hospital as 33.9%, B hospital 30.9%, C hospital 30.3%, second degree was the Electrical and Electronic failure such A hospital as 23.5%, B hospital 25.3%, C hospital 28%, third degree was mechanical failure such A hospital as 19.5%, B hospital 22.5%, C hospital 25.4%. 2. Hospital of failure mode was the highest in Mobile X-ray device(A hospital 62.5%, B hospital 69.5%, C hospital 37.4%), and was the lowest in Sono devices(A hospital 16.76%, B hospital 8.4%, C hospital 7%). 3. Mean time between failures(MTBT) was the highest in SONO devices and was the lowest in Mobile X-ray devices which have 200 - 400 failure hours. 4. Anverage failure ratio was the highest in Mobile X-ray devices(A hospital 31.3%, B hospital 34.8%, C hospital 18.7%), and was the lowest in Sono(Ultrasound) devices (A hospital 8.4%, B hospital 4.2%, C hospital 3.5%). 5. Failure ratio results of medical devices according to QC/PM part of unit failure mode were as follows ; A hospital was the highest part of QC/PM (50%) in Mamo X-ray device and was the lowest part of QC/PM(26.4%) in Castro X-ray. B hospital was the highest part of QC/PM(56%) in Mobile X-ray device, and the lowest part of QC/PM(12%) in Gastro X-ray. C hospital was the highest part of QC/PM(60%) in R/F X-ray device, and the lowest a part of QC/PM(21%) in Universal X-ray. It was found that the units responsible for most failure decreased by systematic management. We made the preventive maintenance schedule focusing on adjustement of operating and dust removal.