• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• The Journal of Korean Association of Computer Education
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• v.10 no.6
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• pp.69-77
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• 2007

In this paper we implement main functions of electronic measuring devices, which are essential to design electric/electronic virtual laboratories on the Web. The implemented virtual electronic measuring devices such as virtual analog multimeter(VAM), virtual function generator(VFG), virtual oscilloscope(VOSC) enable the learners to perform the virtual experiments on the Web by simple mouse clicks. In order to show their validity virtual experiments for understanding how to use them are designed. The virtual experiments for measuring resistance(OHM), AC/DC Voltage(ACV/DCV) and DC Current(DCA) by the VAM are illustrated. In addition, the learners can change the frequency of the signal generated from the VFG and measure by the VOSC several types of the signals generated from the VFG such as triangular, pulse, sinusoidal waveforms. The VOSC can measure voltage and current through two channels of it and provide the learners with additional functions such as zooming, trigger, cursor, summing of waveforms. Since the virtual electronic measuring devices have been implemented as forms of Java classes, various types of applications are available according to the structures of virtual laboratories.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.229-229
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• 2006

Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.322-322
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• 2008

Low-temperature co-fired ceramics (LTCC) have turned out to be very promising technology in accordance with the rapid developments in semiconductor technology. The demands for compact electrical assemblies, smaller power loss as well as high signal density can be fulfilled by LTCC. And for the multi-layered ceramic devices with embedded passive components such as high dielectric constant decoupling capacitor, LTCC materials require the several conditions to avoid delamination and internal cracks. For the present study, diopside-based glass is chosen as the LTCC substrate material in view of its high coefficient of thermal expansion (CTE). From the experimental resultsn the influence of each element on the CTE change can be revealed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.416-425
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• 2021

In the 4^th industrial age, electronic devices are becoming smaller and lighter with a low power consumption to overcome spatial limitation. The piezoelectric energy harvesters can convert mechanical kinetic energy into electric energy; thus, enabling the operation of small electronic devices. Recently, various piezoelectric harvesters have been reported and the electric output from these harvesters could be anticipated by theoretical analysis methods. For example, COMSOL Multiphysics software provides a theoretical simulation of piezoelectric effect with a combination of mechanical and electrical phenomena in the piezoelectric materials. This article introduces a brief modeling of piezoelectric harvester to investigate mechanical stress and electrical output of harvesting devices by the COMSOL Multiphysics software.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1845-1848
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• 2018

We introduce a process for optically reconstructing full-color holographic images recorded by optical scanning holography. A complex RGB-color hologram was recorded and converted into a binary hologram using a direct binary search (DBS) algorithm. The generated binary hologram was then optically reconstructed using a spatial light modulator. The discrepancies between the reconstructed object sizes and colors due to chromatic aberration were corrected by adjusting the reconstruction parameters in the DBS algorithm. To the best of our knowledge, this represents the first optical reconstruction of a full-color hologram recorded by optical scanning holography.

• Journal of Biomedical Engineering Research
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• v.30 no.5
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• pp.428-437
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• 2009

The Performance research about EEG-BCI algorithm in BCI-naive subjects is very important for evaluating the applicability to the public. We analyzed the result of the performance evaluation experiment about the EEG-BCI algorithm in BCI-naive subjects on three different aspects. The EEG-BCI algorithm used in this paper is composed of the common spatial pattern(CSP) and the least square linear classifier. CSP is used for obtaining the characteristic of event related desynchronization, and the least square linear classifier classifies the motor imagery EEG data of the left hand or right hand. The performance evaluation experiments about EEG-BCI algorithm is conducted for 40 men and women whose age are 23.87${\pm}$2.47. The performance evaluation about EEG-BCI algorithm in BCI-naive subjects is analyzed in terms of the accuracy, the relation between the information transfer rate and the accuracy, and the performance changes when the different types of cue were used in the training session and testing session. On the result of experiment, BCI-naive group has about 20% subjects whose accuracy exceed 0.7. And this results of the accuracy were not effected significantly by the types of cue. The Information transfer rate is in the inverse proportion to the accuracy. And the accuracy shows the severe deterioration when the motor imagery is less then 2 seconds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.94-97
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• 2018

Lead zirconate titanate/poly-vinylidene fluoride (PZT/PVDF) piezoelectric devices were fabricated by incorporating carbon nanotubes (CNTs), for use as flexible energy harvesting devices. CNTs were added to maximize the formation of the ${\beta}$ phase of PVDF to enhance the piezoelectricity of the devices. The phase transition of PVDF induced by the addition of CNTs was confirmed by analyzing the X-ray diffraction patterns, scanning electron microscopy images, and atomic force microscopy images. The enhanced output efficiency of the PZT/PVDF piezoelectric devices was confirmed by measuring the output current and voltage of the fabricated devices. The maximum output current and voltage of the PZT/PVDF piezoelectric devices was 200 nA and 350 mV, respectively, upon incorporation of 0.06 wt% CNTs.