• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.568-573
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• 2006

We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.162-165
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• 2000

To investigate the effect of metal electrode in electroluminescent[EL] devices, we fabricated EL devices of ITO/P3HT/Al, ITO/P3HT/LiF/Al and ITO/P3HT/Mg:In structure. In current-voltage-light power characteristics, turn-on voltage of EL devices using LiF insulating layer and Mg:In(2.8V) metal electrode is lower than EL device using Al(4.2V). Besides the external quantum efficiency is improved also. The reason is related to carrier mobility and carrier injection, which would affect the hole-electron balance. In the device with Al electrode, holes injected from indium-tin-oxide[ITO] to poly(3-hexylthiophene)[P3HT] might reach the Al electrode without interacting with injected electrons, because the electron injection efficiency was very low for this electrode. Besides oxidation of the Al electrode is likely due to holes reaching the cathode without meeting injected electrons. Another possible reason for the higher EL efficiency may be the insulating layer playing the role of a tunneling barrier for holes to the Al electrode. In all EL devices, the orange-red light was clearly visible in a dark room. Maximum peak wavelength of EL spectrum emitted at 640nm in accordance with photon energy 1.9eV

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.359-364
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• 2016

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.37-38
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• 2007

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small. However, the SPL of the fabricated microspeakers that have compressive-stressed composite diaphragm show higher output pressure than those of tensile-stressed diaphragm. It produces more than 60dB from 100Hz to 15kHz and the highest SPL is about 100dB at 9.3kHz with 20 Vpeak-to-peak sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.336-339
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• 2004

근래에 $TiO_2$를 이용한 염료감응형 태양전지에 대한 연구가 많이 진행되어 이미 실용화 단계에 이르고 있다. 그러나, 이러한 $TiO_2$를 이용한 태양전지 효율이 한계에 이르러 이를 향상시키기 위한 노력이 다방면에서 이루어지고 있다. 이에 본 연구에서는 넓은 밴드갭 직접형 반도체재료로서, 전기적, 열적, 광학적, 촉매 특성이 우수하고, 압전성이 크고 광투과성 및 형광성이 매우 우수하여, 현재 여러 전자사업 분야에서 사용될 뿐아니라, 태양전지분야에서도 최근 관심이 증대되고 있는, ZnO를 이용하여 $TiO_2$ 대체 전극재로서의 가능성을 고찰하였다. ZnO 슬러리는 유계 방법을 이용하여 제조하였고, 막은 닥터 블레이드(doctor blade)법에 의해 TCO 위에 형성되었다. 원료 분말 및 막의 형상은 FE-SEM에 의해 확인되었다. 형성된 막은 다양한 조건에서 소결하여, 최종적으로 샌드위치형 염료감응형 셀을 제조한 후 효율을 측정 비교하여 태양전지의 활성 전극 재료로서 적정한 ZnO 조건을 예측할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.615-616
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• 2005

Carbon Nanotubes (CNT) on flexible indium tin oxide (ITO) PET films were prepared for dye-sensitized solar cell (DSSC). These CNTs were prepared by spray coating method for various amount of light transparency. Also, Pt counter electrode was prepared by electro deposition method. All $TiO_2$ electrodes were deposited on ITO-PET films by spray coating method. Micro structural images show that CNT counter electrodes prepared by spray-coating have more dense structure with increasing spraying time (0 to 60 seconds). DSSC consisting of $TiO_2$ electrode and CNT counter electrode was fabricated with various amount of light absorption. DSSC have higher light energy conversion efficiency with increasing the thickness of CNT counter electrode. CNT counter electrode is at least compatible to that of CNT counter electrode.

• Design & Manufacturing
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• v.13 no.3
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• pp.1-11
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• 2019

Recently, studies on the development of flexible electronic devices by combining flexible materials and a conductor have been actively performed as interest in wearable devices. Especially, carbon nanotubes (CNT) or graphene coating have been used to construct a circuit to induce improvement in flexibility and rigidity. Various technologies have been developed in the surface coating of conductive materials, which are key to the manufacture of flexible electronic devices. Surface coating products with 3D coating and micro-patterns have been proposed through electrospinning, electrification, and 3D printing technologies. As a result of this advanced surface coating technology, there is a growing interest in manufacturing gradient conductive surfaces. Gradient surfaces have the advantage that they are adapted to apply a gentle change or to inspect optimum conditions in a particular region by imparting continuously changing properties. In this study, we propose a manufacturing technique to produce a continuous gradient conductive surface by combining a partial stretching of elastomer and a conductive material coating, and introduce experimental results to confirm its performance.

• ETRI Journal
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• v.42 no.6
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• pp.951-964
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• 2020

This paper presents a lightweight true random number generator (TRNG) using beta radiation that is useful for Internet of Things (IoT) security. In general, a random number generator (RNG) is required for all secure communication devices because random numbers are needed to generate encryption keys. Most RNGs are computer algorithms and use physical noise as their seed. However, it is difficult to obtain physical noise in small IoT devices. Since IoT security functions are required in almost all countries, IoT devices must be equipped with security algorithms that can pass the cryptographic module validation programs of each country. In this regard, it is very cumbersome to embed security algorithms, random number generation algorithms, and even physical noise sources in small IoT devices. Therefore, this paper introduces a lightweight TRNG comprising a thin-film beta-radiation source and integrated circuits (ICs). Although the ICs are currently being designed, the IC design was functionally verified at the board level. Our random numbers are output from a verification board and tested according to National Institute of Standards and Technology standards.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.803-808
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• 2023

The IoT industry is growing at a record growth rate every year, but developers face practical problems such as security, data storage, and heterogeneity between devices before developing an IoT platform. In particular, heterogeneity between devices occurs due to network type and protocol, and device firmware must be changed or multiple IoT platforms must be used in some cases. In addition, data is wasted due to redundant sensing due to the overflow of indiscriminate IoT devices. In this paper, we propose a device-independent firmware design to solve the heterogeneity between devices in the IoT platform environment where Local WAS uses the MQTT protocol.