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http://dx.doi.org/10.4313/JKEM.2016.29.6.359

NiO-transparent Metal-oxide Semiconductor Photoelectric Devices  

Ban, Dong-Kyun (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Park, Wang-Hee (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Eun, Seong Wan (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Kim, Joondong (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.6, 2016 , pp. 359-364 More about this Journal
Abstract
NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.
Keywords
Metal-oxide semiconductor; NiO; ITO; Heterojunction; Photoelectric device; Photodetector; Solar cell;
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Times Cited By KSCI : 2  (Citation Analysis)
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