• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.529-532
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• 1999

본 연구에서는 유기 전기 발광 소자에서 녹색 발광층으로 사용되는 terbium(Tb) complexes와 europium(Eu) complex, 정공 수송층으로 사용되는 TPD (N, N\`-diphenyl-N,\`(3-methylphenyl)-1, 1\`biphenyl-4, 4\`-diamine), 그리고 전자 수송층으로 사용되는 Alq$_{3}$ (trois(8-hydroxyquinolino)aluminum), Bebq$_2$들의 Uv/Vis. 홉광도와 PL 스펙 트럼과 같은 광학적 특성을 조사하였으며 또한 이러한 물질들을 이용하여 다양한 종류의 유기 전기 발광 소자를 제작하고 제작된 소자들의 전류밀도-전압-조도 등의 전기 . 광학적 특성을 조사하였으며, 그 결과 다 음과 같은 결곤을 얻을 수 있었다. 다양한 ligand를 갖는 Tb complex들의 경우에도 EL 스펙트럼의 파장대 (wavelength)는 546nm~548nm의 녹색 발광을 하는 것을 알 수 있었고, 제작된 소자 중에서 Tb(ACAC)$_3$(Phen) 을 발광충으로 하고, TPD, 그리고 Bebq$_2$를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 낮은 구동 전압을 갖는다는 것을 확인하였으며 logJ-logV 특성에서도 모든 전계 구간에서 이러한 구조의 소자가 가장 높은 전류밀도를 나타냈으며 저 전계 구간에서 전류밀도 타이가 가장 컸다. 소자의 전류밀도와 휘도의 관계에 있어서는 제작된 네 종류의 소자 중 Tb(ACAC)3(Cl-Phen)를 발광층으로 하고 TPD, 그리고 Bebq2를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 휘도가 우수한 것을 알 수 있었다. 또한 red (europium complex), green (terbium complex), 그리고 blue (TPD) 색깔을 나타내는 유기 재료를 사용하여 한 소자에서 백색 소자를 제작하여 cyclic voltametric방법을 이용하여 각 유기 물질들의 에너지 준위를 조사하여, 각각의 소자들을 에너지 밴드 다이어그램(energy band diagram)으로 자세히 설명하였다.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1241-1245
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• 2004

Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.392-395
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• 2003

For the purpose of digital x-ray imaging, many materials such as $PbI_2$, $HgI_2$, TlBr, CdTe and CdZnTe have been under development for servaral years as direct converter layer. $Hgl_2$ film detector have recently been shown as one of the most promising semiconductor materials to be used as direct converters in x-ray digital radiography. This paper, the $HgI_2$ films are deposited on conductive-coated glass by screen printing, in which $HgI_2$ powder is embedded in a binder and solvent, and the slurry is used to coat the conductive-coated glass. We investigated electrical characteristic of the fabricated $HgI_2$ films. The x-ray response to radiological x-ray generator of 70Kvp using the current integration mode will be reported for screen printing films. These results indicate that $HgI_2$ detectors have high potential as new digital x-ray imaging devices for radiography.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.463-465
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• 2005

The $ZnGa_2O_4$:Mn phosphor was synthesized through solid-state reactions at the various molar ratio of Mn from 0.002 % to 0.01 %. Structural and optical properties of the $ZnGa_2O_4$:Mn phosphor was investigated by using X-ray diffraction (XRD), and cathodoluminescence (CL) measurements. The XRD patterns show that the Mn-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shifts from 420 to 510 nm in comparison with $ZnGa_2O_4$ when Mn is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$:Mn phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.3-4
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• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.