• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.4
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• pp.347-355
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• 2014

Thermal problems that are directly related to the lifetime of an electronic device are becoming increasingly important owing to the miniaturization of electronic devices. To solve thermal problems, it is essential to study thermal stability through thermal diffusion and insulation. A honeycomb sandwich plate has anisotropic thermal conductivity. To analyze the thermal deformation and temperature distribution of a system that employs a honeycomb sandwich plate, the thermal and elastic properties need to be determined. In this study, the thermal and elastic properties of a honeycomb sandwich plate, such as thermal conductivity, coefficient of thermal expansion, elastic modulus, Poisson's ratio, and shear modulus, are predicted. The properties of a honeycomb sandwich plate vary according to the hexagon size, thickness, and material properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.331-334
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• 2003

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart $CuInSe_2$. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.1
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• pp.119-124
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• 2010

The MAC layer in ad-hoc network which makes network of nodes without infrastructure for a time has became an issue to reduce delay, allocate fairly bandwidth, control TX/RX power and improve throughput. Specially, the problem to reduce power consumption in ad-hoc network is very important part as ad-hoc devices use the limited battery. For solution of the problem, many power control algorithms, such as distribute power control, PCM (Power Control MAC) and F-PCF (Fragmentation based PCM), are proposed to limit power consumption until now. Although the algorithms are designed to minimize power consumption, the latency communication zone is generated by power control of RX/TX nodes. However the algorithms don't suitably reuse the space. In this paper proposes the algorithm to improve data throughput through Spatial Reuse based on a power control method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.6
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• pp.406-413
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• 2014

In recent years, various contents traffics are increasing according to the various internet connectable devices which have become contents provider. Because these contents traffics show different pattern from previous one, many researches for efficient contents delivery system are in progress. CCN(Contents Centric Network), one of the representative research subject, has inter operation problem with a current network because it has clean-state architecture. In this point of view, this paper suggests the SaNA(Service adaptive Network Architecture) for efficient contents delivery when it inter operates with current network architecture. SaNA is a convergence system which can be gradually applied to current network using CCN and SDN(Software Defined Network) which are core future internet technologies. Appling this system on the contents delivery service, it can increase the network bandwidth utilization by two times and decrease the contents delivery time by 1.7 times.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.12
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• pp.1834-1843
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• 2016

DVRs are the most common recording and displaying devices used for surveillance. Video compression plays a key role in DVRs for saving storage; the video compression standard, H.264/AVC, has recently become the dominant choice for DVRs. DVRs require various display modes, such as fast-forward, backward play, and pause; these are called trick modes. The implementation of precise trick mode play requires a very high decoding capability or a very intelligent scheme in order to handle the high computation complexity. The complexity is increased in many surveillance applications where more than one camera is used to monitor multiple spots or to monitor the same area using various angles. An implementation of a trick mode play and a frame buffer management scheme for the hardware-based H.264/AVC codec for multi-channel is presented in this paper. The experimental results show that exact trick mode play is possible using a standard H.264/AVC video codec with keyframe encoding feature at the expense of bitstream size increase.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.5
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• pp.1049-1057
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• 2017

In-vehicle multimedia systems are one of the most important factors in the automotive industry. Especially, multimedia systems are more important in advanced commercial vehicles such as premium express buses. In this paper, we proposed a multimedia streaming system architecture using MEP(MOST Ethernet Packets) for premium express buses based on MOST150. We have designed and implemented the prototype of proposed multimedia streaming system. We have designed a board based on i.MX6 to operate a proposed multimedia streaming system. The software has designed a multimedia system for premium express buses based on Android which is an open source platform. MOST(Media Oriented Systems Transport) is a high-speed multimedia network technology for in-vehicle multimedia system. The MOST network is able to manage up to 64 devices and ring topology is used basically. In addition, the MOST Network meets EMI(Electro-Magnetic Interference)/ EMC(Electro-Magnetic Compatibility) requirements because it uses plastic optical fibers(POF).

• Radiation Oncology Journal
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• v.17 no.3
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• pp.249-255
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• 1999

Purpose : The purpose of this study is to investigate fundamental aspects of the dose response of fluorescent screen-based electronic portal imaging devices (EPIDS). Materials and Methods : We acquired scanned signal across portal planes as we varied the radiation that entered the EPID by changing the thickness and anatomy of the phantom as well as the air gap between the phantom and the EPID. In addition, we simulated the relative contribution of the scintillation light signal in the EPID system. Results : We have shown that the dose profile across portal planes is a function of the air gap and phantom thickness. We have also found that depending on the density change within the phantom geometry, errors associated with dose response based on the EPID scan can be as high as $7\%$. We also found that scintillation light scattering within the EPID system is an important source of error. Conclusion : This study revealed and demonstrated fundamental characteristics of dose response of EPID, as relative to that of ion chambers. This study showed that EPID based on fluorescent screen cannot be an accurate dosimetry system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.