• Title/Summary/Keyword: Electronic devices

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A Study for Voltage Sag Detection Using Detection Characteristic Of Wavelet Transform (웨이블릿 변환의 검출 특성을 이용한 전압강하 검출에 관한 연구)

  • Jung, Seung-Bock;Kim, Jae-Chul;Seol, Kyu-Hwan
    • Proceedings of the KIEE Conference
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    • 2005.07a
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    • pp.172-174
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    • 2005
  • Recently, a concern of power qualify increases because of electronic device development and well-being generation. Power quality problems such as voltage sag, harmonics, flicker etc. have adverse effects on electric devices. Therefore, power quality problems have been monitored. This paper studies a detection of voltage sag that is more severer than the others. A voltage sag has been monitored using rms or wavelet method. This paper proposes an advance detection method using wavelet. An error Of Start Point differs error of ending point. We use this difference. So, we respectively revise detection error. Also, we revise multiplying average error rate.

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Development of high-voltage rectangu1ar waveform generator operating in low-frequency domain (저주파용 고전압 구형파 발생장치의 개발)

  • Lee, Bok-Hee;Choi, Won-Gyu;Chang, Sug-Hun
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.959-961
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    • 1998
  • In this paper, we present design rule of high-voltage rectangular generator working in wide band frequency domain. Though power electronics now have voltage ratings up to several kV, it is difficult to design and fabricate high-voltage systems with the power electronic devices alone. So we have combined IGBT with technically designed transformer to get the high-voltage rectangular waveforms. In this work, next two things are the main factors. The first one is design of transformer working low-frequency domain of less than 10Hz. And the second one is adding offset voltage part. As a result, we can get variable frequency high-voltage rectangular waveform and this can be used as a voltage source of sandpaper manufacturing process.

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A Study on CAN Based System Reliability Test (CAN기반 시스템의 통신 신뢰성 검증)

  • Kim, Jong-Hyun;Chung, Ki-Hyun;Choi, Kyung-Hee
    • The KIPS Transactions:PartC
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    • v.15C no.3
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    • pp.199-204
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    • 2008
  • Controller Area Network was developed originally for in-vehicle communication network. But it is now widely used for factory automation because of its properties such as strong noise resistance and high reliabilities. With changing communication environments from peer to peer topology to bus topology, we should check each devices about not only mechanical operations but also electronic or software operations. In this paper, we suggest reliability test environment for CAN based system, which is divided two parts, data correctness and timely delivery.

Technology and Standardization in Telematics: Telematics Reference Model

  • Kim K. H.;Jang J. A.;Han E. Y.
    • Proceedings of the KSRS Conference
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    • 2004.10a
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    • pp.87-90
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    • 2004
  • Telematics is an emerging industrial field made up of the convergence of technologies. The key technologies for Telematics are server-side technology, terminal-side technology, communication-related technology, and positioning technology. Standardization in Telematics is now getting more notice these days. Domestic situation is explained for several related facilities such as ETRI, TTA, and Telematics Standardization Forum. In this paper, we will focus especially on the standard reference model that is the most fundamental framework of Telematics technology standardization. In the reference model, the Telematics system is composed of Telematics client part, communication part, and Telematics server part. The Telematics client part consists of terminal, positioning device, and car electronic devices. Communication part can be composed of various telecommunication channels such as CDMA, WLAN, DMB, WiBro, etc. which can guarantee the seamless two-way communication. Telematics server part is composed of TSP(Telematics Service Provider) server and CP(Contents Provider) servers gathering and managing the various Telematics services. This Telematics reference model is expected to be utilized as the base architecture in developing the technology and standards from now on.

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Iodine Doping of Pentacene and its Electrical Properties

  • Rahim, Abdur;Lee, Young-Kyu;Lee, Chi-Young;Lee, Jae-Gab
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.238.2-238.2
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    • 2011
  • Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

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Preparation and Electronic Defect Characteristics of Pentacene Organic field Effect Transistors

  • Yang, Yong-Suk;Taehyoung Zyung
    • Macromolecular Research
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    • v.10 no.2
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    • pp.75-79
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    • 2002
  • Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

Electrical Applications of OTFTs

  • Kim, Seong-Hyun;Koo, Jae-Bon;Lim, Sang-Chul;Ku, Chan-Hoi;Lee, Jung-Hun;Zyung, Tae-Hyoung
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.170-170
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    • 2006
  • [ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

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All Inkjet Printed Plastic RFID Tag

  • Cho, Gyou-Jin;Song, Jae-Hee;Jung, Min-Hoon;Lee, Bock-Im;Kim, Sun-Hee;Lim, Nam-Soo;Lee, Na-Young
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.171-171
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    • 2006
  • In this presentation, we would like to report an inkjet printing method to produce 1 to 2 bit RFID tag working in the range of 6 to 28 MHz with or without transistors. The inkjet printing method especially for the formation of transistors, inductors, capacitors will be presented by the view of polymer chemistry. This presentation also includes the printing schemes for memory cell, ring oscillator, rectifier, antenna, and so forth for constructing RFID tag. I illustrate these strategies by describing recent my works on the formation of all SWNT-TFT and conducting polymer-silver nanocomposite inks that can be applied in the construction of electronic devices.

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Implementation and Experimental Evaluation of Bandwidth Allocation Scheme on PROFIBUS (PROFIBUS에서 대역폭 할당 기법 구현 및 실험적 평가)

  • Hong, Seung-Ho;Kim, Yu-Chul;Kim, Ji-Yong
    • Journal of Institute of Control, Robotics and Systems
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    • v.6 no.11
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    • pp.943-954
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    • 2000
  • Fieldbus is the lowest level industrial network in the communication hierarchy of factory automation and distributed process control systems. Data generated from field devices are largely divided into three categories : time-critical, periodic and time-available data. Because these data share one fieldbus medium, it needs a method that allocates these data to the bandwidth-limited fieldbus medium. This paper introduces an implementation method of bandwidth allocation scheme on PROFIBUS. In order to implement bandwidth allocation scheme on PROFIBUS, the following functions need to be supplemented on the FDL(Fieldbus Datalink Layer) protocol: (i) separation of medium bandwidth into periodic and non-periodic intervals, (ii) synchronization of node timers over a local link. In order to examine the validity of bandwidth allocation scheme on PROFIBUS, this paper develops an experimental model of a network system. The results obtained from the experimental model show that the bandwidth allocation scheme satisfies the performance requirement of time-critical, periodic and time-available data.

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A Study on Implementation and Interconnection of Chaotic Neuron Circuit (카오스 뉴론회의 구현 및 상호연결에 관한 연구)

  • 이익수;여진경;이경훈;여지환;정호선
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.2
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    • pp.131-139
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    • 1996
  • This paper describes the chaotic neuron model to represent the complicated states of brain and analyzes the dynamical responses of chaotic neuron such as periodic, bifurcation, and chaotic phenomena which are simulated iwth numerical analysis. Next, the chaotic neuron circuit is implemented w ith the analog electronic devices. The transfer function of chaotic neuron is given by summed the linear and nonlinear property. The output function of chaojtic neuron is designed iwth the two cMOS inverters and a feedback resistor. By adjusting the external voltage, the various dynamical properties are demonstrated. In addition, we construt the chaotic neural networks which are composed of the interconnection of chaotic neuroncircuit such as serial, paralle, and layer connection. On the board experiment, we proved the dynamci and chaotic responses which exist in the human brain.

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