• Title/Summary/Keyword: Electronic devices

Search Result 4,580, Processing Time 0.031 seconds

Next-Generation Biomedical Devices via MicroLEDs (마이크로LED를 응용한 차세대 생체 치료 소자 개발)

  • Lee, Han Eol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.34 no.4
    • /
    • pp.221-228
    • /
    • 2021
  • With the advent of the IoT (internet of things) era, there has been discussion on how to efficiently use various information from daily life. In academic and industrial society, various smart devices such as smart watches, smart phones, and smart glasses have been developed and commercialized for narrowing the physical/psychological distance with user information. According to recent developments of smart devices, the contemporary people have desired to check their body information and treat disease by themselves. According to the needs of the time, biological researches by phototherapy/monitoring have been actively conducted. Among various light sources, microLEDs have been spotlighted due to their superior optoelectric properties and stability. In this paper, we would like to review the state-of-the research results on the next-generation biological therapy devices via microLEDs.

X-ray Diffraction Analysis of Ag-In-Sb-Te

  • Park, Jeong W.;Hun. Seo;Kim, Myong R.;Park, Woo S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1996.05a
    • /
    • pp.94-98
    • /
    • 1996
  • The x-ray diffraction experiments were carried out to investigate the phase transformation of the sputter-deposited Ag-In-Sb-Te optical thin films after rapid thermal annealing and while being annealed with high-temperature x-ray attachment. The formation mechanism of the reported mixed phase, with both amorphous phase and fine crystalline AgSbTe2 phase, of Ag-In-Sb-Te system in its ordered state was explained. Moreover the characteristics of the other phases which appear during the annealing processes were also discussed in the present article.

  • PDF

Flexible Electronic Materials Industry Trend (플렉서블 전자소재 산업 동향)

  • Park, J.M.;Lee, S.Y.;Roh, T.M.;Lee, J.I.;Lee, J.H.
    • Electronics and Telecommunications Trends
    • /
    • v.36 no.3
    • /
    • pp.65-75
    • /
    • 2021
  • In the era of the 4th industrial revolution, interest in flexible devices is increasing for information and communication technology electronic products. This is a hot technology field in which competition is intensifying to preoccupy the global market for flexible electronic devices because of the many advantages of ultra-lightweight, flexibility, design diversity, high applicability, and low cost. Some flexible electronic products have been commercialized in Korea, but they are still inadequate in terms of price versus performance, so technology development is required continuously. Particularly, the development of flexible electronic materials is emerging as a key factor for flexible electronic device applications. In this study, we will look into the flexible electronic material technology and industry trends following the trend of flexible technology changes in the display, secondary battery, and solar cell, which has emerged as national core industry and has secured global competitiveness. In addition, I want to introduce the Flexible Electronic Material Center, which was established to foster the flexible electronic material industry.

A Study on the Preparation of Standardized Operation Criteria for Enhancement of Safety and Convenience of Mobile Electronic Notice Service

  • JongBae, Kim
    • International Journal of Advanced Culture Technology
    • /
    • v.10 no.4
    • /
    • pp.547-554
    • /
    • 2022
  • Due to the expansion of non-face-to-face services, the demand for user identification for mobile devices is increasing. Recently, mobile resident registration cards, mobile driver's licenses, etc. are installed in mobile phones and used for user identification and authentication services. In order to identify a user online, unique identification information of the online user is required. In particular, in order to provide information only to online users, it is necessary to accurately deliver information to a mobile device owned by the user. To make this service possible, it was realized with the advent of mobile electronic notice service. However, the identification of online service users and information on mobile devices owned or subscribed by the relevant users require safe management as personal information, and it is also necessary to increase the convenience of online service users. In this paper, we propose an operating standard for providing a mobile electronic notice service that sends electronic notice using a mobile device owned by the user. The mobile electronic notice service is a service that provides notices expressed in electronic information to the recipient's cell phone, mobile app, e-mail, etc. Therefore, as the use of mobile electronic notification service increases and the provision and use of connecting information to identify users increases, it is necessary to expand the mobile electronic notification service while safely protecting users' personal information.

RECENT TRENDS OF POWER ELECTRONIC INDUSTRY IN CHINA

  • Qian, Z.M.;He, X.
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.1 no.1
    • /
    • pp.1-6
    • /
    • 1996
  • Recent trends of the power electronic industry in China have been summarized in this paper. Based on the applications of the power electronic products in the chinese industries the production trends of power semiconductor devices, drives, power supplies, power electronic industry used in power systems in China have been briefly reviewed.

  • PDF

Self-Powered Integrated Sensor Module for Monitoring the Real-Time Operation of Rotating Devices (회전기기 실시간 동작상태 모니터링을 위한 자가발전 기반 센서모듈)

  • Kim, Chang Il;Yeo, Seo-Yeong;Park, Buem-Keun;Jeong, Young-Hun;Paik, Jong Hoo
    • Journal of Sensor Science and Technology
    • /
    • v.28 no.5
    • /
    • pp.311-317
    • /
    • 2019
  • Rotating devices are commonly installed in power plants and factories. This study proposes a self-powered sensor node that is powered by converting the vibration energy of a rotating device into electrical energy. The self-powered sensor consists of a piezoelectric harvester for self-power generation, a rectifier circuit to rectify the AC signal, a sensor unit for measuring the vibration frequency, and a circuit to control the light emitting diode (LED) lighting. The frequency of the vibration source was measured using a piezoelectric-cantilever-type vibration frequency sensor. A green LED was illuminated when the measured frequency was within the normal range. The power generated by the piezoelectric harvester was determined, and the LED operation was assessed in terms of the vibration frequency. The piezoelectric harvester was found to generate a power of 3.061 mW or greater at a vibration acceleration of 1.2 g ($1g=9.8m/s^2$) and vibration frequencies between 117 and 123 Hz. Notably, the power generated was 4.099 mW at 122 Hz. As such, our self-powered sensor node can be used as a module for monitoring rotating devices, because it can convert vibration energy into electrical energy when installed on rotating devices such as air compressors.

Characteristics by deposition and heat treatment of Cr and Al thin film on stainless steel (금속 기판위에 Cr과 Al 증착 및 열처리 융합 기술에 의한 표면 형상 변화)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin
    • Journal of Convergence for Information Technology
    • /
    • v.11 no.3
    • /
    • pp.167-173
    • /
    • 2021
  • There is an increasing interest in manufacturing various electronic devices on a bendable substrate. In this paper, we observed a surface morphology by annealing for 20 minutes at temperatures of 150 ℃, 350 ℃, and 550 ℃, respectively, with samples coated by chromium and aluminum. Data on surfaces are investigated using high-resolution SEM and AFM that can measure roughness up to nm. There is no difference from the sample without heat treatment up to 350 ℃, but the change of crystal grains can be observed at 550 ℃. In the future, for application to the flexible optoelectronic field, additional characteristics such as electrical conductivity and reflectivity will be analyzed and optical devices will be manufactured. In conclusion, we will explore the possibility of applying metal materials to flexible electronic devices.

Electrical Effects in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)

  • Lee, Dong-Hyun;Pyo, Sang-Woo;Koo, Ja-Ryong;Kim, Jun-Ho;Shim, Jae-Hoon;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.661-664
    • /
    • 2004
  • In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

  • PDF

Fabrication and characterization of fault current limiting devices made of stabilizer-free coated conductors (Stabilizer-free 초전도 선재를 이용한 한류 소자 제작 및 특성 시험)

  • Yim, Seong-Woo;Park, Chung-Ryul;Yu, Seong-Duck;Kim, Hye-Rim;Hyun, Ok-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.371-371
    • /
    • 2009
  • For the application of superconducting wires to fault current limiting devices, it is required that they have a high rated voltage when a fault occurs. Stabilizer-free coated conductors, particularly, shows a good performance for the high rated voltage, which is beyond 0.6 V/cm. In this study, using the stabilizer-free coated conductors, we made fault current limiting devices and examined their characteristics. Fault current limiting devices were fabricated with a shape of the cylinder of a mono-filar coil winding. Stabilizer-free coated conductors were wound along the mono-filar coil line and the terminal parts between the wire and metal were soldered using In solder. Two kinds of devices were fabricated by a different method in the terminal joint, one was made by a soldering and the other was made by a soldering-free joint. Critical currents and resistance at the joint parts were measured. In addition, long-time current flowing tests were also carried out for the characterization of the fault current limiting devices.

  • PDF

Improvement of external quantum efficiency of EL devices with PVK/P3DoDT blends using as a emitting layer (PVK/P3DoDT 블랜드를 발광층으로 사용한 EL 소자의 발광효율 향상에 관한 연구)

  • Kim, Ju-Seung;Seo, Bu-Wan;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.04b
    • /
    • pp.96-99
    • /
    • 2000
  • We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.

  • PDF