• Title/Summary/Keyword: Electronic devices

Search Result 4,580, Processing Time 0.029 seconds

A D2D communication architecture under full control using SDN

  • Ngo, Thanh-Hai;Kim, Younghan
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • v.10 no.8
    • /
    • pp.3435-3454
    • /
    • 2016
  • Device-to-device (D2D) communication is a potential solution to the incessant increase in data traffic on cellular networks. The greatest problem is how to control the interference between D2D users and cellular mobile users, and between D2D users themselves. This paper proposes a solution for this issue by putting the full control privilege in cellular network using the software-defined networking (SDN) concept. A software virtual switch called Open vSwitch and several components are integrated into mobile devices for data forwarding and radio resource mapping, whereas the control functions are executed in the cellular network via a SDN controller. This allows the network to assign radio resources for D2D communication directly, thus reducing interference. This solution also brings out many benefits, including resource efficiency, energy saving, topology flexibility, etc. The advantages and disadvantages of this architecture are analyzed by both a mathematical method and a simple implementation. The result shows that implementation of this solution in the next generation of cellular networks is feasible.

Signal Analysis According to the Position of the ECG Sensor Electrode in Healthcare Backpack (헬스케어 가방의 ECG 센서 전극 위치에 따른 신호 분석)

  • Lee, Hyeon-Seok;Chung, Wan-Young
    • Journal of Sensor Science and Technology
    • /
    • v.23 no.6
    • /
    • pp.402-408
    • /
    • 2014
  • Heart rate is one of the most important signal to monitor the health condition of the patient or exerciser. Various wearable devices have been developed for the continuous monitoring of ECG signal from human body during exercise. Among these, ECG chest belt has been widely used. However wearing chest belt with ECG sensor is uncomfortable in normal life due to the electrode contact between metal electrodes of ECG sensor and skin of the human body. So we develop the royal healthcare backpack that can measure ECG signal without skin contact by using capacitor-type ECG sensor. The position of the measurement point is critical to collect a clear ECG signal in the capacitive ECG measurement from backpack. Various tests were conducted to find the optimal ECG measurement position which has less noise and could get strong and clear ECG signal during exercise, walking, hiking, mountain climbing and cycling.

Characteristics of Pre-Post Contacts of DC Consent-Plug (직류용 콘센트-플러그의 초기-후기접점 특성)

  • Na, Jaeho;Wang, Yongpeel;Kim, Hyosung
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.21 no.4
    • /
    • pp.290-295
    • /
    • 2016
  • Socket-outlets and plugs are essential devices that supply electric power into user appliances. During plug-out operation of an engaged plug from the socket-outlet, the consistent arc between the plug and the socket-outlet could develop into heavy fires in DC systems but only a small spark in AC systems. This paper proposes a pre-/post-electrode method to prevent plugs and socket-outlets from melting by sustaining arc energy. To implement the proposed pre-/post-electrodes, an experimental plug is manufactured with two electrodes, in which a post resistance Rs is connected in between. This paper investigates the function of the post resistance Rs, in which the best value of the post resistance Rs is obtained through simulation and experiment.

Plasma for Semiconductor Processing

  • Efremov, Alexandre
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.05b
    • /
    • pp.1-6
    • /
    • 2002
  • Plasma processing of semiconductor materials plays a dominant role in microelectronic technology. During last century, plasma have gone a way from laboratory phenomena to industrial applications due to intensive progress in both scientific and industrial trends. Improvement and development of new experience together with development of plasma theory and plasma diagnostics methods. A most parameters (pressure, flow rate, power density) and various levels of plasma system (energy distribution, volume gas chemistry, transport, heterogeneous effects) to understand the whole process mechanism. It will allow us to choose a correct ways for processes optimization.

  • PDF

Characteristics of Semiconductor Optical Amplifier for WDM Systems (WDM 시스템을 위한 반도체 광 증폭기의 특성)

  • Park, Yoon-Ho;Kang, Byung-Kwon;Lee, Seok;Woo, Deok-Ha;Kim, Sun-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.04a
    • /
    • pp.201-203
    • /
    • 2000
  • To improve characteristics of optical devices that used be WDM system optimally, we investigated characteristics of two types structures that consisted of non-uniform thickness Quantum well. They have high characteristic temperature and 3dB bandwidth of spontaneous emission are 57nm, 50nm respectively, which are 1.4times, 1.3times wider than conventional structure.

  • PDF

A Study on the Deposition Transfer state of Organic Thin Films(Arac.acid) (유기박막(Arac.acid)의 누적전이상태에 관한 연구)

  • Chung, Hun-Sang;Song, Jin-Won;Lee, Kyung-Sup;Jun, Yon-Su;Chon, Woo-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.05a
    • /
    • pp.57-60
    • /
    • 2001
  • The characterization of organic Metal/Insulator/Metal(MIM) devices were investigated from LB films. The physicochemical properties of the LB films were by UV absorption spectrum and AFM. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/ml The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it.

  • PDF

The Electrical Characteristics of Varistor. (바리스터의 전기적 특성)

  • Hong, Kyung-Jin;Jang, Dong-Hwan;Cho, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.05a
    • /
    • pp.52-56
    • /
    • 2001
  • The Breakdown electric field of ZnO semiconductor devices in voltage-current characteristics was increased by increasing of additive materials. The specimen that has not additive materials was not formed spinel structure. The critical voltage that has not spinel structure was 235[V]. When the additive materials has 0.5 and 2[mol%], the Breakdown electric field was 840 and 758[V] in each additive materials. The Breakdown electric field of varistors as a factor of voltage and current was increased by addition of oxide antimony. The varistors that has oxide antimony was linearly increased in low electric field.

  • PDF

Characteristics of poly 3C-SiC doubkly clamped beam micro resonators (양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 특성)

  • Ryu, Kyeong-Il;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.217-217
    • /
    • 2009
  • This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

  • PDF

Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application (메모리 응용을 위한 비정질 Ge-Se 재료의 전해질 메카니즘 연구)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.67-68
    • /
    • 2009
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

  • PDF

Effect of carrier transporting materials on the optical and electrical characteristics of blue phosphorescent organic light emitting devices (전하수송층에 따른 청색인광 OLED의 전기적.광학적 특성)

  • Seo, Yu-Seok;Moon, Dae-Gyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.36-37
    • /
    • 2009
  • We have studied the effect of the hole transporting layers on the device efficiencies blue phosphorescent organic light emitting diodes (PHOLED) with of iridiumIIIbis4,6-di-fluorophenyl-pyridinato-N,C2picolinate (FIrpic) doped 3,5--N,N-dicarbazole-benzene (mCP) host. The highest efficiency of blue PHOLED is strongy dependent on the hole transporting materials, exhibiting the maximum current efficiency.

  • PDF