• Journal of Biosystems Engineering
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• v.18 no.4
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• pp.358-370
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• 1993

In Korea, fruit grading has been mainly done manually, and manual grading depends on human sense. Thus it is subjected to human error and is not always as consistent as would be desired. Therefore, a study on the development of fruit grader was initiated to improve the consistency of fruit grading. The sensitivity for fruit weight of the conventional spring type weight grader has a tendency to decrease by physical characteristics of spring which is used as a weight sensing unit. This study was carried out to develop weight measuring device for establishing the base of weight sensing unit of electronic weight grader. This device consists of a weight sensor using load cell, data acquisition system, and a microcomputer containing program to calculate fruit weight. The weight measuring device using load cell was developed to increase sensitivity of fruit weight. The result of this study showed that the weight sensing unit of electronic weight grader contributed to the improvement of performance of weight measuring device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.506-509
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• 2002

In this paper. we give pressure stimulation into organic ultra thin films and detected the induced displacement current proper ties, and then manufacture a device under the accumulation condition. In processing of a device manufacture. And electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes. followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear, Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.742-747
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• 2007

In 2-dimensional SCBF (Spherically Convergent Beam Fusion) device, the effect on neutron production rate of the grid cathode geometry was simulated. The motion of Particles was tracked using Monte Carlo Method including the atomic and molecular collision processes and potential distribution was calculated by Finite Element Method, Main processes of the discharge were the ionization of $D_2$ by fast $D_2^+\;ion$. As the number of cathode rings was small and the size of grid cathode decreased, the ion current increased and neutron production rate will also increase. The star mode discharge which is a very important characteristic in SCBF device, was confirmed by the ionization position.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.834-836
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• 2009

We investigated the device performance for organic light-emitting characteristics based on the electron-injecting interfacial characteristics of Ba deposited on tris(8-quinolinolato)aluminum (III) ($Alq_3$) with a change of a Ba coverage. The device performance of organic light-emitting diodes with Ba coverage of 1 nm significantly improved by the lowering of the electron-injecting barrier height that was induced by electronic charge transfer. However, the device with Ba coverage above 1 nm showed poor device performance. The spectroscopic results indicated that the $Alq_3$ molecules started to decompose by the reaction between Ba and the phenoxide moiety of the molecule.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.762-767
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• 2001

We report the white light emission from the multilayer organic electroluminescent(EL) device using exciplex emission. The exciplex at 500nm originated between poly(N-vinylcarvazole)(PVK) and 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT) and exciplex of 50nm originated from N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) and BBOT were observed. Also, the energy transfer from PVK to BBOT and poly(3-hexylthiophene)(P3HT) in mixed emitting materials was occurred. The electroluminescence(EL) spectra of organic EL device which have a device structure of ITO/CuPc(5nm)/emitting layer(100nm)/BBOT(30nm)/LiF(1.4nm)/Al(200nm) were slightly changed as a function of the applied voltage. The luminance fo 12.3 ${\mu}$W/$\textrm{cm}^2$ was achieved at 20V and EL spectrum measured at 20V corresponds to Commission Internationale de L\`Eclairage(CIE) coordinates of x=0.29 and y=0.353.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.33-37
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• 2001

A vertical trench electrode type EST has been proposed in this paper. The proposed device considerably improves snapback which leads to a lot of problems of device applications. In this paper, the vertical dual gate Emitter Switched Thyristor (EST) with trench electrode has been proposed for improving snab-back effect. It is observed that the forward blocking voltage of the proposed device is 745V. The conventional EST of the same size were no more than 633V. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and the punch through breakdown of the proposed EST is occurred at latest.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.173-177
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• 2008

We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.

• Journal of IKEEE
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• v.19 no.4
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• pp.514-519
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• 2015

We propose the multiple gate structure of double gate junctionless metal oxide silicon field oxide transistor (JL MOSFET) for device optimization. Since different workfunction within multiple metal gates, electric potential nearby source and drain region is modulated in accordance with metal gate length. On current, off current and threshold voltage are influenced with gate structure and make possible to meet some device specification. Through the device simulation work, performance optimization of double gate JL MOSFETs are introduced and investigated.