• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.413-417
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• 2019

In this study, the volume resistivity of XLPE materials with various voltage ratings was discussed. The volume resistivity of the developed XPLE nanocomposite was measured, and the conductivity mechanism of the material was also examined. The ASTM D 257 and IEC 60093 measurement methods were used for these tests. The equipment was designed to measure up to a temperature of $200^{\circ}C$, and the electrode structure was designed to maintain the thickness and temperature uniformity of the sample. The conductivity of the sample decreased with temperature, and the samples reached saturation within 500s, after which the conductivity leveled off. By analyzing the current density and the electric field, we can well explain the electric conductivity behavior of our sample with the Schottky mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.116-121
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• 2019

Hexagonal boron nitride particles (s-hBN) modified with 3-aminopropyl triethoxysilane (APTES) were used for the preparation of silicone composite materials. The microstructure of the composite materials was observed, and the thermal conduction and mechanical characteristics of the composite sheets were studied based on the compositions and microstructures. When a small amount of s-hBN particles was used, the thermal conductivity of the composite improved as a whole, and the tensile strength of the sheet also increased. The thermal conductivity and tensile strength of the composite in which a small amount of carbon fiber was added along with s-hBN were further improved. However, the use of carbon nanotubes with structural characteristics similar to those of carbon fiber resulted in lower thermal conductivity and tensile strength. Elastic silicone composites exhibiting 2.5 W/mK of thermal conductivity and a low hardness are expected to be used as thermally conductive interfacial sheet materials.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.874-877
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• 2002

The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.39-39
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.273-276
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• 1996

Polyphenylenediamine(PPD) film was prepared with dimethylsulfoxide after the synthesis of PPD by chemical polymerization. The molecular structure of conductive polymer synthesized were discussed by using SEM, FT-IR, NMR. The electrical conductivity measurements were carried out at room temperature. The electrical conductivity which was obtained from electrical instrument was 1.98${\times}$10$\^$-2/ S/cm at ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1099-1107
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• 1998

In this study, the microstructure and electric conductivity of 5mol% $Gd_2O_3$-5mol% $Y_2O_3-ZrO_2$ system(5G5YZ) with a variation of sintering time at $1600^{\circ}C$ were investigated. By the result of TEM analysis of 5G5YZ sintered for 12h, a microcrack was observed near grain boundary. The change of the sintering time did not affect the lattice conductivity, but the grain boundary contribution was varied with the sintering time. The grain boundary conductivity of the sample sintered for 1h showed the highest value. Furthermore, the activation energy of the total conductivity was independent upon the sintering time and showed approximately 1.01eV. The highest conductivity measured at $1000^{\circ}C$ was 0.0197S/cm with the sample sintered for 1h. Comparing to 0h’s, the thickness ration of grain boundary as a function of sintering time were 0.88, 1.11 and 1.29 for 1h, 5h and 12h, respectively. In case of the sample sintered for 1h, the thickness of the grain boundary showed the lowest value. The increase of the sintering time over 1h made the decrease of the electric conductivity as well as the increase of the grain growth and the thickness of the grain boundary. As a result, it seemed that the proper sintering time for 5G5YZ composition was 1h.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.32-37
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• 2000

Effect of alloying element additions to Ag on thermal conductivity and electrical conductivity of sheath materials for Bi-Pb-Sr-Ca-Cu-O(BSCCO) tapes has been characterized. The thermal conductivity at low temperature range (10~300K) of Ag and Ag alloys were evaluated by both direct and indirect measurement techniqueas and compared with each other, It was observed that the thermal conductivity decreases with increasing the content of alloying element such as Au, Pd and Mg. Thermal conductivity of pure Ag at 3 0K was measured to be 994.0 W(m.K) on the other hand, the corresponding values of $Ag_{0.9995}Mg_{0.0005}$, $Ag_{0.974}$, $Au_{0.025}$, $Mg_{0.001}$, $Ab_{0.973}$, $Au_{0.025}$, $Mg_{0.002}$ and $Ag_{0.92}$, $Pb_{0.06}$, $Mg_{0.02}$ were 342.6, 62.1, 59.2 and 28.9 W(m.K), respectively, indicating 3 to 30 times lower than that of pure Ag. In addition, the thermal conductivity of pure Ag measured by direct and indirect measurement techniques was 303.2 and 363.8 W(m.K) The difference in this study is considered to be within an acceptable error range compared to the reference data.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.9-16
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• 2005

This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.424-429
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• 2007

Novel conductive $CO_2$ membranes composed of dual phases, molten carbonates and electronic conducting ceramics, were investigated. As the microstructure control of electronic conducting ceramic supports is extremely important to keep the molten carbonates stable in the membranes by a capillary force applied by the pore structure of the supports, we have scrutinized the microstructure of the electronic conducting supports utilizing microscopic images and gas permeability measurement. From the evaluation of the electrical conductivities of the molten carbonates and the electronic conducting ceramic supports, we found that the ionic conductivity of the molten carbonates could determine $CO_2$ flux through the dual phase membranes if the surface exchange rate were relatively high enough.