• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.160-161
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• 2006

To Improve the mean-life and the reliability of power cable, we have investigated thermal conductivity of XLPE insulator and semiconducting materials in l54[kV] underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Thermal conductivity were measured by Nano Flash Diffusivity thermal conductivity measurement temperature ranges of XLPE insulator were from 20[$^{\circ}C$] to 90[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/mm]. In case of semiconducting materials. the measurement temperature ranges of thermal conductivity were from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.238-241
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• 1996

In this paper, we investigated the electrical characteristics which is d.c. and a.c. conductivity of the amorphous Te$_{80}$Se$_{10}$Sb$_{10}$thin film prepared by thermal evaporation. As the results, the d.c. conduction mechanism was followed thermally activated conduction and from the data of d.c. conductivity, the acti-vation energy and mobility gap were obtained. the d.c. conductivity was increased with temperature and a.c. conductivity also was increased with temperature and frequency. It can consider that the annealing is indispensable for higher conductivity since the activation energy decreased but d.c. and a.c. conductivity increased with annealing.aling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.4
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• pp.406-412
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• 2009

In this work, a new method to obtain the effective ground conductivity value in the middle frequency band where the informations of soil characteristics are insufficient was proposed. The proposed method obtained the effective ground conductivity values with the measured field strength from sea reference stations and general attenuation model in the middle frequency band. In addition, the proposed method used statistical method to minimize the error between the measurements and the predictions. Then, the effective ground conductivity in Korea peninsular was obtained by using the proposed method. Finally, it was verified that the effective ground conductivity using the proposed method is useful to predict electric field strength in the middle frequency band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.627-632
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• 2023

Lithium-ion batteries are widely used in various applications, including electric vehicles and portable electronics, due to their high energy density and long cycle life. The performance of lithium-ion batteries can be improved by using solid electrolytes, in terms of higher safety, stability, and energy density. Li_1.5Al_0.5Ti_1.5(PO₄)₃ (LATP) is a promising solid electrolyte for all-solid-state lithium batteries due to its high ionic conductivity and excellent stability. However, the ionic conductivity of LATP needs to be improved for commercializing all-solid-state lithium battery systems. In this study, we investigate the microstructures and ionic conductivities of LATP by incorporating B₂O₃ glass ceramics. The smaller grain size and narrow size distribution were obtained after the introduction of B₂O₃ in LATP, which is attributed to the B₂O₃ glass on grain boundaries of LATP. Moreover, higher ionic conductivity can be obtained after B₂O₃ incorporation, where the optimal composition is 0.1 wt% B₂O₃ incorporated LATP and the ionic conductivity reaches 8.8×10^-5 S/cm, more than 3 times higher value than pristine LATP. More research could be followed for having higher ionic conductivity and density by optimizing the processing conditions. This facile approach for establishing higher ionic conductivity in LATP solid electrolytes could accelerate the commercialization of all-solid-state lithium batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.97-100
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• 1994

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.627-633
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• 2003

The effects of alloying-element additions to Ag sheath on thermal conductivity and mechanical properties of Bi-2223 superconductor tapes have been evaluated. In order to evaluate the effects of sheath alloys and their configuration on the properties of tape, various combinations of Ag and Ag alloys were selected as the inner and outer sheath. Thermal conductivity of the tapes was evaluated by using thermal integral method at 10 ∼120 K. It was observed that the addition of Mg, Sb, and Au to Ag sheath significantly decreased the thermal conductivity at low temperature probably due to the alloying effect. Specifically, the thermal conductivity of AgMg, AgSb, and AgAu at 40 K were 411.4, 142.3, and 109.7 W/(m·K), respectly, which is about 2∼9 times lower than that of Ag (1004.6 W/(m·K)). In addition, the thermal conductivity of alloy-sheathed tape was significantly dependent on their thermal conductivities of constituent sheath materials. The mechanical properties of alloy-sheathed tapes were also evaluated. Yield strength and tensile strength were improved but workability decreased for alloy-sheathed tapes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.215-218
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• 1998

The thermal stability of polyaniline-camphorsulfonic acid(PANI-CSA) film was studied as a function of temperature and time. A decrease in electrical conductivity of PANI-CSA film occurred when PANI-CSA film is subjected to temperature above 60$^{\circ}C$. From the result of thermogravimetry (TG), it was thought that the deterioration in electrical conductivity of PANI-CSA film was due to evaporation of water and residual solvent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.221-223
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• 1995

The electrical conductivity of SnO$_2$added ZnO was investigated using the DC and AC methods. The electrical conductivity of SnO$_2$added ZnO was decreased with increasing the concentration of SnO$_2$. The cal쳐lated effective dielectric constants of 3 mol%, 5 mo1%, and 7 mol% are ~7, ~13, and ~120, respectively. The factor of the decrease for the electrical conductivity seems to be the increase of the resistance of grain decreasing the size of grain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.22-24
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• 1995

The electrical conductivity of TiO$_2$doped ZnO was investigated by means of complex impedance measurement and voltage-current source and meaurement unit. The e1ectrical conductivity of TiO$_2$added ZnO was increased with increasing the concentration of TiO$_2$. The calculated relative dielectric constant was decreased with increasing the concentration of TiO$_2$. The increase of electrical conductivity seems to be the effect of TiO$_2$donor doping.