• E2M - 전기 전자와 첨단 소재
• /
• 제9권4호
• /
• pp.372-378
• /
• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Bulletin of the Korean Chemical Society
• /
• 제15권6호
• /
• pp.428-432
• /
• 1994

The crystals of ${\beta}-and\;{\beta}'-(ET)_2ICl_2$ have a modified structure of organic superconductor ${\beta}(ET)_2I_3$. These salts possess strictly different physical properties : the ${\beta}$ phase is a metal but the ${\beta}'$ phase is a semiconductor. Our band electronic structure calculations show that the ${\beta}$ phase is somewhat anisotropic 2D metal and the ${\beta}'$ phase with the 1D character in electronic structure is magnetic insulating, in good agreement with experimental indications.

• 한국전자파학회논문지
• /
• 제26권8호
• /
• pp.718-729
• /
• 2015

S-대역과 X-대역에서 동작하며, 개구면 공유 구조를 가지는 광대역 패치 안테나를 제작하였다. S-대역 안테나는 $2{\times}2$로 천공된 패치를 가지며, 천공된 자리에 X-대역에서 동작하는 패치 안테나를 $2{\times}2$ 배열하였다. 두 대역에서 모두 20 % 이상의 넓은 대역폭 특성을 가지는 개구면 공유 구조를 가지는 이중 대역 안테나를 제작하고, 방사 특성을 분석하였다.

• EDISON SW 활용 경진대회 논문집
• /
• 제2회(2013년)
• /
• pp.287-289
• /
• 2013

How the different thickness of thin films of black-P has an effect on its electronic band structure and structure has been studied by using SIESTA code. Although the interaction between the thin films has something to do with band reduction, it does not affect the inter-atomic distance between two nearest neighbour puckered layers.

• 한국전자파학회논문지
• /
• 제25권2호
• /
• pp.189-198
• /
• 2014

본 논문에서는 동일 대역에서 동시에 전 이중 통신을 하기 위한 프레임 구조를 사용하는 터보 등화기를 결합한 SSD (Simultaneous Single band Duplex) 시스템을 제안한다. 본 논문에서는 자기 간섭 신호를 보다 효율적으로 제거하기 위하여 프레임 구조를 사용한다. 본 논문에서는 송수신 프레임 구조를 사용할 경우의 시스템의 특성을 분석하기 위하여 프레임 구조를 사용하지 않는 시스템과 성능을 비교하였다. 시뮬레이션 결과로 본 논문에서 제안하는 시스템은 프레임 구조를 사용하였을 경우, 프레임 구조를 사용하지 않았을 경우보다 더 좋은 성능을 내며, 프레임 구조를 사용하는 제안하는 시스템은 더 적은 터보 등화기의 전역 반복으로 프레임 구조를 사용하지 않은 시스템과 유사한 성능을 낼 수 있는 것을 확인하였다.

• Coupled systems mechanics
• /
• 제5권4호
• /
• pp.305-314
• /
• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

• Bulletin of the Korean Chemical Society
• /
• 제19권6호
• /
• pp.628-634
• /
• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• Coupled systems mechanics
• /
• 제2권2호
• /
• pp.147-157
• /
• 2013

We numerically investigate the electronic band structure of carbon nanotubes (CNTs) under radial corrugation. Hydrostatic pressure application to CNTs leads to a circumferential wave-like deformation of their initially circular cross-sections, called radial corrugations. Tight-binding calculation was performed to determine the band gap energy as a function of the amplitude of the radial corrugation. We found that the band gap increased with increasing radial corrugation amplitude; then, the gap started to decline at a critical amplitude and finally vanished. This non-monotonic gap variation indicated the metal-semiconductor-metal transition of CNTs with increasing corrugation amplitude. Our results provide a better insight into the structure-property relation of CNTs, thus advancing the CNT-based device development.

• 한국전자파학회논문지
• /
• 제21권1호
• /
• pp.83-89
• /
• 2010

본 논문에서는 개선된 바랙터 결합 선로를 제안하고, 이 구조를 사용한 주파수 합성기를 설계 제작하였다. 제안된 결합 선로는 기존 구조에 추가적인 $\lambda$/4 전송 선로를 이용하여 바랙터에서 반사되는 잡음신호를 제거하는 구조이다. 제작한 주파수 합성기는 Ku-band 대역에서 헤어핀 공진기를 사용하였으며, PLL을 사용하여 주파수를 고정하였다. 제안된 구조로 제작한 헤어핀 발진기의 경우, 38 MHz의 주파수 조정 범위와 100 kHz offset에서 -97 dBc/Hz의 위상 잡음을 나타내었다. 이러한 측정 결과는 제작한 기존 구조의 바랙터 결합 선로를 가지는 헤어핀 발진기보다 30 MHz 개선된 주파수 조정 범위와 8 dB 개선된 위상 잡음 특성을 가지는 것으로 확인되었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2006년도 하계종합학술대회
• /
• pp.67-68
• /
• 2006

A suspended microstrip line structure over mushroom-like SMPs is designed and is applied to a dual-frequency and dual-polarization microstrip patch antenna. This structure has a distinctive and sharp rejection band and provides near 0 dB insertion loss outside the rejection band. Applying the structure to the conventional DFDP antenna enhanced the isolation between the two ports more than 20 dB. The structure is expected to have a wide range of applications in antennas and filters due to its compactness and integrability in circuits.