• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Bulletin of the Korean Chemical Society
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• v.15 no.6
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• pp.428-432
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• 1994

The crystals of ${\beta}-and\;{\beta}'-(ET)_2ICl_2$ have a modified structure of organic superconductor ${\beta}(ET)_2I_3$. These salts possess strictly different physical properties : the ${\beta}$ phase is a metal but the ${\beta}'$ phase is a semiconductor. Our band electronic structure calculations show that the ${\beta}$ phase is somewhat anisotropic 2D metal and the ${\beta}'$ phase with the 1D character in electronic structure is magnetic insulating, in good agreement with experimental indications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.8
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• pp.718-729
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• 2015

A S / X dual broad band patch antenna with shared aperture structure is fabricated. A $2{\times}2$ perforated patch is used for S-band operation and a $2{\times}2$ patch antenna array is integrated in the $2{\times}2$ perforation for X-band operation. The measurement results of a S / X dual broad band patch antenna with shared aperture structure show the broad band characteristics larger than 20 % in both bands.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.287-289
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• 2013

How the different thickness of thin films of black-P has an effect on its electronic band structure and structure has been studied by using SIESTA code. Although the interaction between the thin films has something to do with band reduction, it does not affect the inter-atomic distance between two nearest neighbour puckered layers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.189-198
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• 2014

In this paper, we propose a SSD(Simultaneous Single band Duplex) system using turbo equalizer with frame structure for simultaneous full-duplex communication in single band. the proposed system uses frame structure for self-interference cancellation effectively. In this paper, performance of the proposed system with frame structure compares to performance of SSD system without frame structure to analysis performance of the proposed system with frame structure. Simulation results show that the performance of proposed system with frame structure is batter than performance of SSD system without frame structure when the number of global iterations of both system is same. Using proposed system with frame structure, we can verify that the performance like SSD system without frame structure by few global iteration of turbo equalizer.

• Coupled systems mechanics
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• v.5 no.4
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• pp.305-314
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• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.628-634
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• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• Coupled systems mechanics
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• v.2 no.2
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• pp.147-157
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• 2013

We numerically investigate the electronic band structure of carbon nanotubes (CNTs) under radial corrugation. Hydrostatic pressure application to CNTs leads to a circumferential wave-like deformation of their initially circular cross-sections, called radial corrugations. Tight-binding calculation was performed to determine the band gap energy as a function of the amplitude of the radial corrugation. We found that the band gap increased with increasing radial corrugation amplitude; then, the gap started to decline at a critical amplitude and finally vanished. This non-monotonic gap variation indicated the metal-semiconductor-metal transition of CNTs with increasing corrugation amplitude. Our results provide a better insight into the structure-property relation of CNTs, thus advancing the CNT-based device development.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.83-89
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• 2010

In this paper, we propose a new varactor coupled line structure and design the VCO using the proposed structure. The proposed coupled line structure removes the reflected signals from the varactor diode using an added $\lambda$/4 transmission line. The frequency synthesizers are designed using the PLL technique at Ku-band. The synthesizer using the proposed coupled structure has 38 MHz frequency tuning range and -97 dBc/Hz phase noise characteristic at 100 KHz offset frequency. The measured results show improved tuning range as well as the improved phase noise characteristics compared to the conventional designs.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.67-68
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• 2006

A suspended microstrip line structure over mushroom-like SMPs is designed and is applied to a dual-frequency and dual-polarization microstrip patch antenna. This structure has a distinctive and sharp rejection band and provides near 0 dB insertion loss outside the rejection band. Applying the structure to the conventional DFDP antenna enhanced the isolation between the two ports more than 20 dB. The structure is expected to have a wide range of applications in antennas and filters due to its compactness and integrability in circuits.