• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.446-447
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• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.100-103
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• 2003

The primary insulation system used in an oil-filled transformer is kraft paper, wood, porcelain and oil. Modern transformers use paper that is chemically treated to improve its tensile strength properties and resistance to aging caused by immersion in oil. But these insulation papers are mainly aged to thermal stress. Over the course of the insulation paper and oil's life it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper using the layer insulation. We made two aging cell in which thermal aging tests of insulation papers and mineral oil are conducted. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.603-608
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• 2023

Carbon black with high purity and excellent conductivity is used as a conductive filler in the semiconductive compound for EHV (Extra High Voltage) power cables of 345 kV or higher. When carbon black and CNT (carbon nanotube) are applied together as a conductive filler of a semiconductive compound, stable electrical properties of the semiconductive compound can be maintained even though the amount of conductive filler is significantly reduced. In EHV power cables, since the semi-conductive layer is close to the conductor, stable electrical characteristics are required even under high-temperature conditions caused by heat generated from the conductor. In this study, the theoretical principle that a semiconductive compound applied with carbon black and CNT can maintain excellent electrical properties even under high-temperature conditions was studied. Basically, the conductive fillers dispersed in the matrix form an electrical network. The base polymer and the matrix of the composite, expands by heat under high temperature conditions. Because of this, the electrical network connected by the conductive fillers is weakened. In particular, since the conductive filler has high thermal conductivity, the semiconductive compound causes more thermal expansion. Therefore, the effect of CNT as a conductive filler on the thermal conductivity, thermal expansion coefficient, and volume resistivity of the semiconductive compound was studied. From this result, thermal expansion and composition of the electrical network under high temperature conditions are explained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.331-337
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• 2017

Thermal batteries, reserve power source, is activated by melting of molten salt at the temperature range of $350{\sim}550^{\circ}C$. To immobile the molten state electrolyte when the thermal battery is activated, the binder must be added in electrolyte. Usually, molten salts include 30~40 wt% of MgO binder to ensure electrical insulation as well as safety. However, the conventional MgO binder tends to increase ionic conductive resistance and thus the inclusion of the binder increases the total impedance of the battery. This paper mainly focused on the study of yttria stabilized zirconia (YSZ) as an alternative binder for molten salt. The chemical stability between the molten salt and YSZ is measured by XRD and DSC. And the sufficient path for ionic conduction on molten salt could be confirmed by the enhanced wetting behavior and the enlarged pore size of YSZ. The electrochemical properties were analyzed using single cell tests so that it showed the outstanding performance than that using MgO binder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.502-507
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• 2010

In order to design nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system are investigated for their micro structure properties. For this synthesis, the liquid alloys are cooled by the water quenching method. Micro structure images are obtained by using an electron probe micro analyzer(EPMA). Dendritic and lamellar structures are clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. The increase in the $Bi_2Te_3$ composition ratio causes to change of the structure from dendritic to lamellar. The Seebeck coefficient of sample 5, in which the mixture rate of $Bi_2Te_3$ is 83%, is measured as the highest value. In contrast, the others decrease with the increase of the $Bi_2Te_3$ composition ratio. Meanwhile, p-type characteristics are observed in sample 6, at 91%-$Bi_2Te_3$ mixture rate. The power factors of the all samples are calculated with the Seebeck coefficient and resistivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.157-161
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• 2019

Independent control of electronic and thermal transport behaviors is one of the most effective approaches to enhance the performance of thermoelectric materials. To address this, many researches on the relationship between defect structures and thermoelectric properties have been carried out since defects are intrinsic ingredients of polycrystalline materials. Recently, experimental results of simultaneously improved electronic and thermal transport properties have been reported via the formation of 0-dimensional point defects. Here, theoretical backgrounds to the engineering of electronic and thermal transport behaviors by the formation of point defects are discussed and related experimental considerations are also presented in order to provide a practical guide for the development of highperformance thermoelectric materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.520-521
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• 2007

• Progress in Superconductivity
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• v.4 no.2
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• pp.180-183
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• 2003

We evaluated the effect of alloying-element additions to Ag sheath on thermal conductivity of Bi-2223 superconductor tapes. In order to evaluate the effect of sheath alloys and their configuration on the properties of tape, various combinations of Ag and Ag alloys were selected as inner and outer sheath. Thermal conductivity of the tapes was measured by using thermal integral method at 10∼120 K. It is observed that the presence of alloying-elements such as Mg, Sb, and Au in Ag sheath results in decreased thermal conductivity at low temperature. Specifically, the thermal conductivity of AgMg, AgSb, and AgAu at 40 K were 411.4, 142.3, and 109.7 W/(m·K), respectively, which is about 2∼9 times lower than that of Ag (1004.6 W/(m·K)). In addition, the thermal conductivity of alloy-sheathed tape was significantly dependent on their values of constituent sheath materials.