• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.480-485
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• 2006

A research was undertaken on the thermal properties and behavior of the conductors in a controlled chamber, which was designed to implement the outdoor air temperature, heat and wind conditions With ACSR $410mm^2$ overhead conductors, we measured the maximum temperature of the conductors and the temperature gradient from the core to the surface regions as a function of current, tension, wind velocity and outdoor air temperature. This test also provided a comparative analysis between the measured temperature values of conductors in the controlled chamber and the theoretical calculations of ANSI/IEEE at normal condition. There was not much influence of tension on the conductor temperature. However, the compactness of conductor wires increased with an increase in tension, which eventually increased the coefficient of effective thermal conductivity and, accordingly the conductor temperature was reduced more or less.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.223-223
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• 2007

Thermal and mechanical properties were investigated in several semi-conductive materials which is composed of carbon black and polymer. EVA, EEA, and EBA is normally used for matrix polymer and normally acetylene black and furnace black is used. Isothermal thermo gravimetric analysis is done as a function of atmosphere and temperature. In nitrogen atmosphere semicon compound was slowly degradaded but in ambient condition degradaded fast. So in the cable manufacturing, atmosphere and materials are very important.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.53-61
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• 2015

High-energy ball milling was tested as a method for producing Ultra High Molecular Weight Polyethylene (UHMWPE)- based nanodielectrics containing 1 wt% and 5 wt% OctaIsoButylPOSS (OibPOSS). Qualitative and quantitative evaluations were used to explore the compatibility between OibPOSS and PE. Several ball milling variables were optimized in a bid to achieve UHMWPE/OibPOSS nanodielectrics. The morphology, as well as the thermal and the dielectric properties of the samples, were characterized by scanning electron microscopy, thermogravimetric analysis, broadband dielectric spectroscopy, and progressive-stress breakdown tests. The results showed that (i) ball milling was an effective method for producing UHMWPE/OibPOSS dielectric composites, but appeared ineffective in dispersing OibPOSS at the nanoscale, and (ii) the resulting UHMWPE/OibPOSS dielectric composites presented thermal and dielectric properties similar to those of neat UHMWPE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.395-396
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• 2009

For investigation of electrical properties of XLPE cable termination, we prepared a thermal contraction type kit and 6.6kV XLPE cable. The cable termination that have simulated defect by badness construction have been manufactured and their insulation characteristics such as ac and impulse withstand test have been measured. The influence of defects such as thickness decrease and heating time have been studied. When thickness decreased 1mm, the decreased of AC breakdown voltage value is not very distinctive. However, when thickness decreased 2mm, the insulation AC breakdown voltage value was very low down to 43kV. When approved heat for 300s than 60s, AC Breakdown voltage value appeared high. And also, after insulation breakdown took place, the sample was observed before and after disassembly, and the insulation breakdown hole was observed by means of optical microscope.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.762-767
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• 2017

Mullite ($3Al_2O_3{\cdot}2SiO_2$) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as $1,600{\sim}1,700^{\circ}C$, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, $Cr_2O_3$, and $Y_2O_3$ to mullite, followed by sintering at $1,325{\sim}1,550^{\circ}C$ for 2 h. With additives of 2 wt% of MgO, 2 wt% of $Cr_2O_3$, 4 wt% of $Y_2O_3$, A density of $3.23g/cm^3$ was obtained for the sintered body at $1,350^{\circ}C$ upon using 2 wt% MgO, 2 wt% $Cr_2O_3$, and 4 wt% $Y_2O_3$ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was $4.15ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.136-139
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• 2000

Epoxy materials are used as insulation material for electric power cables. In the case of a flow of excess current due to the temperature difference which occurs between the heat of the conductor and the atmosphere, heat degrades connection point of the cables. Also, the mechanical stress, which occurs due to the thermal expansion coefficient of cable connection electrode system and epoxy insulation materials along with the gap between thermal conduction based on the extra high voltage of transmitted voltage, increases possibility of cracks to occur. The relationship between mechanical stress and electrical breakdown mechanism is verified for the epoxy materials such as high toughness epoxy materials, which comes to be used contemporarily, and for the breakdown mechanism of epoxy materials on the multi-stresses (mechanical and electrical) due to the variation of the temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.290-293
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• 1999

(Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ thin films were fabricated at different RTA temperatures and thicknesses by Sol-Gel method. Solution consisting of acetate powders and titanium isopropoxide in a mixture of acetic acid and ethylene glycol were spin coated onto Pt/Ti/SiO$_2$/Si substrates. The films were annealed in the temperature range of 650~80$0^{\circ}C$ for 3 minutes by rapid thermal annealing. These BST thin films were fully crystallized at 75$0^{\circ}C$ and showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~468 and dielectric loss was ~0.025 at a thickness of approximately 4000$\AA$.EX>.>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.