• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.20-21
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• 2008

Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.501-507
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• 2015

In this paper, EPR (ethylene propylene rubber) insulation material was accelerated degradation test at $121^{\circ}C$, $136^{\circ}C$, $151^{\circ}C$, and experiment the typical EAB (elongation at break) at mechanical characteristics analysis. It is shown that the failure-time at the point of 50% of the initial value of Elongation rate to obtain the activation energy. The failure-time was shown each 5,219 hr, 3,165 hr, and 668 hr at three temperatures. In order to derive the activation energy, Arrhenius methodology was applied. Also, we got the Arrhenius plot from three accelerated temperatures. The activation energy values got 0.98 eV from EAB test. The experimental data were evaluated for estimating the probability density, and the suitable distribution by using statistical program MINITAB. It is shown that EAB data by the acceleration thermal degradation is most suitable for the Weibull distribution.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• 한국전자통신학회논문지
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• 제19권3호
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• pp.589-602
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• 2024

열전 발전기(TEG)는 일반적으로 열 변환 효율이 높지 않다. 열전 발전기 모듈의 성능은 재료의 특성, 다리의 개수 외에도 다리의 형상에 따라 달라진다. 본 연구에서는 폐열을 효율적으로 수확할 수 있도록 열전소자의 다리 형상을 원통형, 큐브형 등 다양한 기하학적 구조로 모델링하여 전기적 특성을 수치상으로 비교하였다. 다리 형상에 따른 온도분포 및 발전량을 비교하였고 기존 Cube 모양이 가장 높게 나타났다. 냉각효과를 적용한 발전량을 비교한 결과 자연대류에서는 Cone, 강제대류에서는 Hourglass 모양이 가장 높았다. 본 연구 결과에 따르면 기하학적 구조가 열전 발전기의 효율에 영향을 미칠 수 있음을 확인하였다

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.14-14
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• 2006

Al2O3 단결정을 기판을 이용하여 HVPE법으로 GaN를 성장한 후 얻어진 GaN wafer는 N-face에 동종인 GaN를 성장하였다. 이때 동종 성장은 Al2O3와의 열팽창계수 차이로 야기된 휨을 제거할 수 있었으며, 양쪽 면은 결합 밀도가 급격히 감소하였다. 또한 표면 분극을 조사하기 위하여 에칭후 SEM 형상과 CBED를 조사 하였으며 특히 N-face에서의 표면 형상과 PL의 변화를 조사하였다. 이때 N-face의 변화는 초기의 N-face의 특성과 다른 양상을 보여 주고 있으며, DXRD와 PL 분석 걸과 결정성은 두배나 높은 결과를 보여주고 있다.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.44-49
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• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.21-22
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• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.