• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.264-272
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• 1993

Current research aimed at investigating of heat-resistance of magnet wire to endow miniaturizing electronic equipment with a high efficiency or reliability. Thermal stability of magnet wire has a close relationship with physical properties of polymeric coating that is formed from enamel varnish. Design of heat-resistant enamel varnish and coating technology of varnish solution were briefly described. Some factors which have a thermal effect on wire were discussed through the evaluation method of the wire properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.81-85
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• 1990

$WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

• Composites Research
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• v.35 no.2
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• pp.69-74
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• 2022

In this study, the conductive paste used in a wide range such as wiring in the electronic packaging field, the automobile industry, and electronic products is manufactured under various process conditions due to the simplicity of the process, and then the thermal, mechanical, and electrical characteristics are analyzed and simulation studies are conducted to optimize the process. to establish the conditions of the conductive paste manufacturing process. First, a conductive paste was prepared by setting various types of binder resin, an essential component of the conductive paste, and characteristics such as thermal conductivity, tensile strength, and elongation were analyzed. Among the binder resins, the conductive paste applied with a flexible epoxy material had the best physical properties, and a simulation study was conducted based on the physical property data base of the conductive face. As a result of the simulation, the best physical properties were exhibited when the Ag flake volume fraction was 60%.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.27-34
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• 1995

The analysis of nonlinear equivalent circuit and the resonance characteristics of input current and output voltage were simulated, and their electrical properties are discussed in the transverse-type piezoelectric ceramic transformer. The nonlinear resonance characteristics of input current and output voltage showed by the thermal effect due to a higher driving current, the nonlinearity increased greatly as driving current increased. When load resistor was 100[M.ohm.], the nonlinear coefficient was -1.3. The nonlinear resonance curve of input current and output voltage for a variation of input voltage and load resistor agreed with the discussed theory. The output voltage increased nearly proportioned to input voltage when load resistors were below 50[M.ohm.], the voltage step-up ratio decreased when a load resistor was 100[M.ohm.] and their maximum value was 950.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.84-84
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• 2010

Nano particles (10nm SiO2) were silane-treated in order to modify the surface characteristics in a epoxy nanocomposite. Then. micro particles ($3{\mu}m$ SiO2) were poured into the epoxy nanocomposite using various mixing process and epoxy/ micro-and-nano- mixed composites (EMNC) were prepared. The thermal (Tg) and mechanical (tensile and flexural strength) properties were measured by DMA and UTM and the data was estimated by Weibull plot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.150-153
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si wafers deposited by r.f magnetron sputtering, were analyzed with annealing condition(100$0^{\circ}C$, 120 min) by four point probe, SEM and XRD. Until annealing temperature of 100$0^{\circ}C$, MgO had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. The thermal characteristics of Pt micro-heater were analyed with Pt-RTD integrated on the same substrate, In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of 25~40$0^{\circ}C$ temperature of Pt micro-heater had up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.84-89
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• 1995

The growth and the film characteristics of heteroepitaxial $Si_{1-x}Ge_x$ films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of $Si_{1-x}Ge_x$ heteroepitaxial layers, $SiH_4/GeH_4/H_2$gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as $650^{\circ}C$, and the composition ratios change linearly with $SiH_4/GeT_$$ gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm $B_2H_6$ source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200$\AA$/decade.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.713-719
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• 2002

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.215-222
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• 2001

Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.