• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.147-150
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• 1998

Since P-ELD(powders type electroluminescent device) phenomena were found by G.Destriau at first In 1936, lots of studying was performed in order to realize surface emission devices and flat panel display as a backlight. Due to the problem of low luminance and color and so on, it was delayed. Recently using electric field and thermal effect which can change it\`s molecular arrangement, it can be developed using photoelectric properties of P-ELD. P-ELD in this study was prepared by casting method. Basic structure is ITO/Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p(poise) for phosphor, 8p(poise) fort insulator. Dielectric properties was investigated first and emission properties of P-ELD based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. P-ELD prepared in this work exhibits about 100cd/㎡ 1-kHz simusoidal excitation.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.922-923
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• 2006

Thermal management is one of the critical aspects in the design of highly integrated microelectronic devices. The reliability of electronic components is limited not only to operating temperature but also by the thermal stresses caused during the operation. The need for higher power densities calls for use of advanced heat spreader materials. A copper diamond composite has been developed with high thermal conductivity $(\lambda)$ and tailorable coefficient of thermal expansion (CTE). Copper diamond composites are processed via gas pressure assisted infiltration with different copper alloys. Emphasis has been placed on the addition of trace elements in deisgning the copper alloys to facilitate a compromise between thermal conductivity and mechanical adhesion. The interfaces between the alloy and the diamond are related to the thermal properties of these copper composites.

• Advances in nano research
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• v.15 no.5
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.309-309
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• 2007

The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

• Journal of Powder Materials
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• v.13 no.5 s.58
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• pp.321-326
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• 2006

Electronic packaging involves interconnecting, powering, protecting, and cooling of semiconductor circuits fur the use in a variety of microelectronic applications. For microelectronic circuits, the main type of failure is thermal fatigue, owing to the different thermal expansion coefficients of semiconductor chips and packaging materials. Therefore, the search for matched coefficients of thermal expansion (CTE) of packaging materials in combination with a high thermal conductivity is the main task for developments of heat sink materials electronics, and good mechanical properties are also required. The aim of this work is to develop copper matrix composites reinforced with carbon nanofibers. The advantages of carbon nanofibers, especially the good thermal conductivity, are utlized to obtain a composite material having a thermal conductivity higher than 400 W/mK. The main challenge is to obtain a homogeneous dispersion of carbon nanofibers in copper. In this paper, a technology for obtaining a homogeneous mixture of copper and nanofibers will be presented and the microstructure and properties of consolidated samples will be discussed. In order to improve the bonding strength between copper and nanofibers, different alloying elements were added. The microstructure and the properties will be presented and the influence of interface modification will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.819-823
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• 2016

DSSC (dye-sensitized solar cell) is expected to be one of the next-generation photovoltaics because of its environment-friendly and low-cost properties. However, commercialization of DSSC is difficult because of the electrolyte leakage. We propose thermal curable base on silicon resin and apply a unit cell and large area ($200{\times}200mm$) dye-sensitized solar cell. The resin aimed at sealing of DSSC and gives a promising resolution for sealing of practical DSSC. In result, the photoelectric conversion efficiency of the unit cell and the module was 6.63% and 5.49%, respectively. In the durability test result, the photoelectric conversion efficiency of the module during 500, 1,000, 1,500 and 2,000 hours was 0.73%, 0.73%, 1.82% and 2.36% respectively. It was confirmed that the photoelectric conversion efficiency characteristics are constant. We have developed encapsulation material of thermal curing method excellent in chemical resistance. A sealing material was applied to the dye-sensitized solar cell and it solved the problem of durability the dye-sensitized solar cell. Sealing material may be applied to verify the possibility of practical application of the dye-sensitized solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.110-111
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• 2009

상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.