• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.8
• /
• pp.535-540
• /
• 2014

Because of the development of LED technology, products due to high output and compact, the material with high thermal conductivity has been developed. Now that heat radiating part of the LED lamp is currently used for die casting of aluminum. The development of aluminum with excellent thermal conductivity is required. In this study, we measured the thermal properties and compared them while we produced the alloy by changing the component of die casting aluminum. From this study, the thermal conductivity and thermal resistance of the developed alloy were superior to die casting aluminum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.319-322
• /
• 2004

In this paper, we studied on the thermal conductivity and a mechanical property of the elastic epoxy. According to industrial development, insulation materials have various properties. They are solid, liquid, gas state, there are various type. Epoxy, a kind of insulation material, demand of not only high hardness but also elastic property. When the electric current flows into the conductor and the place where the heat occurs, this heat becomes the cause which shortens the life of the electrical appliance. Therefore, for the heat occurred transmit quickly, thermal conductivity of the insulation material is highly demanded. We studied on the thermal conductivity of elastic epoxy on the high voltage. In this result, thermal conductivity confirmed that it followed thermal property of mixed epoxy and addictives. Hardness is decreased when addictives increased.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.21-25
• /
• 2006

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.105-106
• /
• 2008

Structural, optical and electrical properties of CdS films deposited by chemical bath deposition (CBD), which are a very attractive method for low-cost and large-area solar cells, are presented. Cadmium sulfide (CdS) is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS films have a great application potential such as solar cell, optical detector and optoelectronics device. In this paper, effects of Rapid Thermal Process (RTP) on the properties of CdS films were investigated. The CdS films were prepared on a glass by chemical bath deposition (CBD) and subsequently annealed at standard temperature $(400^{\circ}C)$ and treatment time (10 min) in various atmospheres (air, vacuum and $N_2$). The CdS films treated RTP in $N_2$ for to min were showed larger grain size and higher carrier density than the other samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.53-57
• /
• 2002

Reduction of insulation thickness would be beneficial not only for increasing the cable length but would also improve its thermal performance. An interfacial diffusion method was devised to reduce insulation thickness by improving the interfacial properties of XLPE cable insulation. In this paper, to evaluate superficially the interface properties between XLPE insulation and semiconducting layer, the dielectric and insulation properties of tan${\delta}$ and volume resistance were measured with temperature dependence. Above the results, dielectirc and insulation properties with semiconductor/XLPE were more anormal than its bulk caused by the interfacial properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.82-85
• /
• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.60-63
• /
• 2004

Recently, carbon nanotubes(CNTs) have been demonstrated to possess remarkable mechanical and electronic properties, in particular, for field emission applications. Its high aspect ratio and extremely small diameter, hollowness, together with high mechanical strength and high chemical stability, are advantages for use in field emitter. In this paper, we demonstrate electrical discharge properties from carbon nanotube cathode electrodes to use as an emitter electrode of vacuum gauges. Vertically aligned $2{\times}2mm^2$ CNT arrays on the silicon substrate were synthesized by the thermal CVD method on Fe catalytic metal, and a glass patterning by the sand blast method and the silicon/glass anodic bonding processes were applied to make samples with 2 electrodes. The field emission was examined under the vacuum range of $10^{-3}$ Torr.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.3
• /
• pp.488-492
• /
• 2005

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.4
• /
• pp.89-93
• /
• 2018

Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.423-429
• /
• 2001

PbS, CuS and (Pb,Cu)S thin films were chemically deposited on glass from alkaline baths containing lead acetate, copper chloride, thiourea and triethanolamine. The deposition, optical, resistivity and thermal electric properties of these films were studied. PbS thin films showed a hexagonal structure and CuS thin films showed amorphous. The crystalline of (Pb,Cu)S thin films was obtained by heat treatment at 200$\^{C}$ and the deposition ratio of Pb to Cu showed 7:3. The energy gap of PbS, CuS and (Pb,Cu)S thin films were 1.7, 2.1 and 2.4 eV, respectively. Sheet resistance of PbS thin films was less affected on thermal annealing, but hose of (Pb,Cu)S and CuS thin films were more reduced about 3 orders of magnitude. All of those thin films indicated p type semiconductor in temperature ranging 30$\^{C}$ to 150$\^{C}$.