• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.37-44
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• 2013

It is well known that thermal deformation of electronic packages with Pb-Sn solder and with lead-free solder is significantly affected by material properties consisting the package, as well as those of the solder itself. In this paper, the method for determining coefficient of thermal expansion(CTE) of new material is established by using temperature characteristic of strain gages, and the CTE of molding compound are obtained experimentally. The temperature-dependent CTE of molding compound for Pb-Sn solder and that for lead-free solder are obtained by using strain measurements with well known steel specimen and aluminium specimen as reference specimens, and the CTE's are also measured non-contactly by using moire interferometry. Those results are compared, and the agreement between the two types of strain gage experiment and the moire experiment show the strain gage method used in this paper to be reliable. In the case of the molding compound for Pb-Sn solder, the CTE is measured as approximately $15.8ppm/^{\circ}C$ regardless of the temperature. In the case for the lead-free solder, the CTE is measured as of approximately $9.9ppm/^{\circ}C$ below the temperature of $100^{\circ}C$, and then the CTE is increased sharply depending on the temperature, and reaches to $15.0ppm/^{\circ}C$ at $130^{\circ}C$.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.590-594
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• 2018

ZnO micro/nanocrystals are formed by a vapor transport method. Mixtures of ZnO and TiO powders are used as the source materials. The TiO powder acts as a reducing agent to reduce the ZnO to Zn and plays an important role in the formation of ZnO micro/nanocrystals. The vapor transport process is carried out in air at atmospheric pressure. When the weight ratios of TiO to ZnO in the source material are lower than 1:2, no ZnO micro/nanocrystals are formed. However, when the ratios of TiO to ZnO in the source material are greater than 1:1, the ZnO crystals with one-dimensional wire morphology are formed. In the room temperature cathodoluminescence spectra of all the products, a strong ultraviolet emission centered at 380 nm is observed. As the ratio of TiO to ZnO in the source material increases from 1:2 to 1:1, the intensity ratio of ultraviolet to visible emission increases, suggesting that the crystallinity of the ZnO crystals is improved. Only the ultraviolet emission is observed for the ZnO crystals prepared using the source material with a TiO/ZnO ratio of 2:1.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.628-631
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• 1997

The preparation and characterization of $Co(dmppz)_2(3,6-dbq)_2$ (dmppz=1,4-dimethylpiperazine; 3,6-dbq=3,6-di-tert-butyl-1,2-quinone) are established. Temperature-dependent magnetic moments (100-400 K), variable-temperature IR, and electronic spectra are presented to show that the title complex exhibits an equilibrium via a catechol to cobalt intramolecular electron transfer. At temperatures below 350 K, the charge distribution of the complex is $Co^Ⅲ(dmppz)_2(3,6-dbsq)(3,6-dbcat)$ (3,6-dbsq=3,6-di-tert-butyl-1,2-semiquinonato; 3,6-dbcat=3,6-di-tert-butylcatecholato) whereas at the temperature beyond 390 K, the complex is predominantly Co^Ⅱ(dmppz)_2(3,6-dbsq)_2$ form in the solid state. At the temperature range of 350-390 K a mixture of Co(Ⅲ) and Co(Ⅱ) redox isomers exist at equilibrium. The transition temperature (Tc) of Co(Ⅲ)/Co(Ⅱ) in solution is approximately 50° lower than that in the solid state. In particular, thermal analysis on solid sample of the complex discloses that the transition for the Co(Ⅲ)/Co(Ⅱ) is accompanied by the change in heat content of 12.30 kcal/mol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.605-610
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• 2006

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.730-735
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• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.136-140
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• 1992

The purpose of this research is to develop the lithium secondary battery. This paper describes the preparation, electrochemical properties of nontstoichiometric(NS)-$V_6O_{13}$ and characteristics of Li/$V_6O_{13}$ secondary battery. NS-$V_6O_{13}$ was prepared by thermal decomposition of $NH_4VO_3$ under Ar stream of 140ml/min~180ml/min flow rate. And then, this NS-$V_6O_{13}$ was used for cathode active material. Cathode sheet was prepared by compressing the composite of NS-$V_6O_{13}$, acetylene black(A.B) and teflon emulsion (T.E). Characteristics of the test cell are summarised as follows. Oxidation capacity of NS-$V_6O_{13}$ was about 20% less than its reduction capacity. A part of NS-$V_6O_{13}$ cathode active material showed irreversible reaction in early charge-discharge cycle. This phenomena seems to be caused by irreversible incoporation/discoporation of lithium cation to/from NS-$V_6O_{13}$ host. Discharge characteristics curve of Li/$V_6O_{13}$ cell showed 4 potential plateaus. Charge-discharge capacity was declined in the beginning of cycling and slowly increased in company with increasing of coulombic efficiency. Energy density per weight of $V_6O_{13}$ cathode material was as high as 522Wh/kg~765Wh/kg.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.74-80
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• 2009

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.281-287
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• 2009

Pd was deposited on magnesium-oxide-covered magnesium ribon substrate by metal thermal evaporation method in high vacuum. The electronic and chemical properties of Pd samples with different coverages were studied using in-situ X-ray Photoelctron Spectroscopy (XPS) and Field Emission Scanning Electron Microscopy (SEM). For relatively lower amounts of Pd deposited(< 1nm), separate Pd particles could be observed, whereas at higher Pd coverages, Pd thin films caused by agglomeration of Pd nanoparticles was found. The metal support interaction with Pd-support was observed. The Pd atoms on the metal oxide/metal interface were partially negative charged by charge transfer.