• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.75
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• pp.71-94
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• 2017

The Rotterdam Rules is the first international maritime carriage of goods Convention that acknowledge electronic records of contracts of carriage. The Rules have developed separate chapter in relation to electronic transport records' issuing, transfer, etc. This paper aims to evaluate Rotterdam Rules' contribution to the use of electronic transport records. To achieve the aims firstly this paper have examined the related articles of Rotterdam Rules, Secondly in practical aspects, this paper explores the opportunities and obstacles which could be happened in practical procedures, applicable to transport industry, shipper and holder of electronic transport records. Findings could be summarized as follows, first the Rules shows high acceptability to whom it may involved in transport industry by simplify the contents of the Rules to avoid conflict with each countries' national laws. The Rules acknowledge the functional equivalence between paper and electronic transport records in specific provisions. This could be important development to facilitate the use of electronic transport records. But the Rules have not mentioned liability limit of transport industry when the problems arise from issuing, tele-transmission, transfer of the records. And the secure of the functional equivalence between paper and electronic transport records also could be remained in uncertain regime due to different stance of each national laws.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.983-987
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• 2010

In order to investigate the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs) according to various hole transport layers (HTLs), PHWOLEDs composed of HTLs whose structure are NPB/TCTA, NPB/mCP and NPB/TCTA/mCP, two emissive layers (EMLs) which emit two-wavelengths of light (blue and red), and electron transport layer were fabricated. The applied voltage, power efficiency, and external quantum efficiency at a current density of $1 mA/cm^2$ for the fabricated PHWOLEDs were 7.5 V, 11.5 lm/W, and 15%, in case of NPB/mCP, 5 V, 14.8 lm/W, and 13.7%, in case of NPB/TCTA, and 5.5 V, 14.6 lm/W, and 15%, in case of NPB/TCTA/mCP in the hole transport layer, respectively. High emission efficiency can be obtained when the amount of hole injection from anode is balanced out by the amount of electron injection from the cathode to EML by using NPB/TCTA/mCP structured HTL.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Coupled systems mechanics
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• v.6 no.1
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• pp.75-96
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• 2017

As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.31-32
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• 2008

The structure of OLEDs with conventional heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. NPB used as a hole transport layer and DPVBi used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts device's stability. Mixing of the hole transport layerand the emitting layer removes abrupt interface between the hole transport. layer and the electron transport layer. The stability of OLED with graded mixed-layer developed in this study was improved.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.15-22
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• 2008

The bulk-planer MOSFET has a scaling limitation due to the short channel effect (SCE). The Double-Gate MOSFET (DG-MOSFET) is a next generation device for nanoscale with excellent control of SCE. The quantum effect in lateral direction is important for subthreshold characteristics when the effective channel length of DG-MOSFET is less than 10nm, Also, ballistic transport is setting important. This study shows modeling and design issues of nanoscale DG-MOSFET considering the 2D quantum effect and ballistic transport. We have optimized device characteristics of DG-MOSFET using a proper value of $t_{si}$ underlap and lateral doping gradient.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.65
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• pp.95-116
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• 2015

So far several attempts have been made to digitalizing sea transport documents. Three notable examples are SeaDocs, Bolero, e-B/L Korea and Ess-Databridge. Ess-Databridge was established in 2003, with the aim of promoting the use of electronic alternative to shipping documents. The ESS-Databridge system was piloted from 2005 and went live in January 2010. The ESS-Databridge operates under a private legal outline, the Databridge Services and Users Agreement (DSUA). In the Ess-Databridge system, only the user who is in control of the original bill of lading will be able to indorse it on to another user. Once the indorsement is effected and unless the indorsee decide store turn the documents, the indorser loses control and retains access only to an electronic document marked 'copy' for its records. A feature that appears to have been crucial to the success of the CargoDocs service is that visually, e-B/Ls produced using ESS-Databridge appear identical to the paper documents. The ESS-Databridge may be even more successful if the legislators take certain steps that will increase uniformity and certainty in electronic transport documentation.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.252-256
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• 2009

We have developed low driving voltage white organic light emitting diode with a new electron transport material, triphenylphosphine oxide ($Ph_{3}PO$). The white light emission was realized with a rubrene yellow dopant and blue-emitting DPVBi layer. The new electron transport layer results in a very high current density at low voltage, resulting in a reduction of driving voltage. The device with a new electron transport layer shows a brightness of $1150\;cd/m^2$ at a low driving voltage of 4.3 V.