• 제목/요약/키워드: Electronic Devices

검색결과 4,529건 처리시간 0.033초

Amorphous Indium-Tin-Zinc-Oxide (ITZO) Thin Film Transistors

  • 조광민;이기창;성상윤;김세윤;김정주;이준형;허영우
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.170-170
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    • 2010
  • Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

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자바 애플릿을 이용한 단순화된 전자계측장비의 구현 (Implementation of Simplified Electronic Measuring Devices Using Java Applets)

  • 김동식;문일현;우상연
    • 컴퓨터교육학회논문지
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    • 제10권6호
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    • pp.69-77
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    • 2007
  • 본 논문에서는 가상실험실 설계에 필수적인 전자계측장비의 주요기능을 자바애플릿을 이용하여 소프트웨어적으로 구현하였다. 구현된 가상전자계측장비는 가상아나로그 멀티미터, 가상신호발생기, 가상오실로스코프이며, 웹상에서 학습자가 간단한 마우스조작을 통해 가상실험이 가능하도록 하였다. 또한, 구현된 가상전자계측장비의 유효성을 입증하기 위해 주로 전자계측장비의 사용법에 대한 이해를 돕는 가상실험을 구성하였다. 가상아나로그 멀티미터는 OHM, ACV, DCV, DCA를 측정할 수 있는 4가지 실험이 구축되어 있고, 가상신호발생기의 경우 신호발생기에서 주로 다루는 주파수 값을 변화시키거나 삼각파, 구형파, 사인파를 발생시켜 가상오실로스코프로 확인할 수 있도록 하였다. 가상오실로스코프의 경우 두 개의 채널을 이용하여 측정할 수 있는 요소(전압, 전류)를 확대기능을 추가하여 좀 더 세밀하게 측정할 수 있도록 하였으며, 트리거, 커서, 파형의 합성등과 같은 여러 가지 유용한 기능들을 구현하였다. 구현된 가상전자계측장비는 자바클래스 형태로 구현하였기 때문에 가상실험실 구성형태에 따라 여러 가지 다양한 방법으로 활용이 가능하다.

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비소 고상확산방법을 이용한 MOSFET SOI FinFET 소자 제작 (Fabrication of SOI FinFET devices using Aresnic solid-phase-diffusion)

  • 조원주;구현모;이우현;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.133-134
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

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Fabrication of SOI FinFET Devices using Arsenic Solid-phase-diffusion

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.394-398
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    • 2007
  • A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

Controlling Intermolecular Interactions, Optical Property, and Charge Transport in Conjugated Polyelectrolytes for Applications in Opto-electronics Devices

  • Nguyen, Thuc-Quyen;Garcia, Andres;Yang, Renqiang;Bazan, Guillermo
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.229-229
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    • 2006
  • Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

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CaO-MgO-$SiO_2$ 계 LTCC glass에 대한 특성 연구 (Study on properties of CaO-MgO-$SiO_2$ system glass-ceramic for LTCC)

  • 장명훈;마원철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.322-322
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    • 2008
  • Low-temperature co-fired ceramics (LTCC) have turned out to be very promising technology in accordance with the rapid developments in semiconductor technology. The demands for compact electrical assemblies, smaller power loss as well as high signal density can be fulfilled by LTCC. And for the multi-layered ceramic devices with embedded passive components such as high dielectric constant decoupling capacitor, LTCC materials require the several conditions to avoid delamination and internal cracks. For the present study, diopside-based glass is chosen as the LTCC substrate material in view of its high coefficient of thermal expansion (CTE). From the experimental resultsn the influence of each element on the CTE change can be revealed.

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COMSOL Multiphysics를 활용한 캔틸레버 형태의 압전 에너지 하베스터 구조 해석 시뮬레이션 (Structural Analysis Simulation of Cantilever Shaped Piezoelectric Energy Harvester Using COMSOL Multiphysics)

  • 곽민섭;황건태
    • 한국전기전자재료학회논문지
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    • 제34권6호
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    • pp.416-425
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    • 2021
  • In the 4th industrial age, electronic devices are becoming smaller and lighter with a low power consumption to overcome spatial limitation. The piezoelectric energy harvesters can convert mechanical kinetic energy into electric energy; thus, enabling the operation of small electronic devices. Recently, various piezoelectric harvesters have been reported and the electric output from these harvesters could be anticipated by theoretical analysis methods. For example, COMSOL Multiphysics software provides a theoretical simulation of piezoelectric effect with a combination of mechanical and electrical phenomena in the piezoelectric materials. This article introduces a brief modeling of piezoelectric harvester to investigate mechanical stress and electrical output of harvesting devices by the COMSOL Multiphysics software.

Optical Reconstruction of Full-color Optical Scanning Holography Images using an Iterative Direct Binary Search Algorithm

  • Lee, Eung Joon;Cho, Kwang Hun;Kim, Kyung Beom;Lim, Seung Ram;Kim, Taegeun;Kang, Ji-Hoon;Ju, Byeong-Kwon;Park, Sang-Ju;Park, Min-Chul;Kim, Dae-Yeon
    • Journal of the Korean Physical Society
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    • 제73권12호
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    • pp.1845-1848
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    • 2018
  • We introduce a process for optically reconstructing full-color holographic images recorded by optical scanning holography. A complex RGB-color hologram was recorded and converted into a binary hologram using a direct binary search (DBS) algorithm. The generated binary hologram was then optically reconstructed using a spatial light modulator. The discrepancies between the reconstructed object sizes and colors due to chromatic aberration were corrected by adjusting the reconstruction parameters in the DBS algorithm. To the best of our knowledge, this represents the first optical reconstruction of a full-color hologram recorded by optical scanning holography.

뇌컴퓨터접속(BCI) 무경험자에 대한 EEG-BCI 알고리즘 성능평가 (Performance Evaluation of EEG-BCI Interface Algorithm in BCI(Brain Computer Interface)-Naive Subjects)

  • 김진권;강대훈;이영범;정희교;이인수;박해대;김은주;이명호
    • 대한의용생체공학회:의공학회지
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    • 제30권5호
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    • pp.428-437
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    • 2009
  • The Performance research about EEG-BCI algorithm in BCI-naive subjects is very important for evaluating the applicability to the public. We analyzed the result of the performance evaluation experiment about the EEG-BCI algorithm in BCI-naive subjects on three different aspects. The EEG-BCI algorithm used in this paper is composed of the common spatial pattern(CSP) and the least square linear classifier. CSP is used for obtaining the characteristic of event related desynchronization, and the least square linear classifier classifies the motor imagery EEG data of the left hand or right hand. The performance evaluation experiments about EEG-BCI algorithm is conducted for 40 men and women whose age are 23.87${\pm}$2.47. The performance evaluation about EEG-BCI algorithm in BCI-naive subjects is analyzed in terms of the accuracy, the relation between the information transfer rate and the accuracy, and the performance changes when the different types of cue were used in the training session and testing session. On the result of experiment, BCI-naive group has about 20% subjects whose accuracy exceed 0.7. And this results of the accuracy were not effected significantly by the types of cue. The Information transfer rate is in the inverse proportion to the accuracy. And the accuracy shows the severe deterioration when the motor imagery is less then 2 seconds.

Carbon Nanotube의 첨가에 의한 PZT/PVDF 압전소자의 상전이와 출력 효율 개선 (Phase Transition and Improvement of Output Efficiency of the PZT/PVDF Piezoelectric Device by Adding Carbon Nanotubes)

  • 임영택;이선우
    • 한국전기전자재료학회논문지
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    • 제31권2호
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    • pp.94-97
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    • 2018
  • Lead zirconate titanate/poly-vinylidene fluoride (PZT/PVDF) piezoelectric devices were fabricated by incorporating carbon nanotubes (CNTs), for use as flexible energy harvesting devices. CNTs were added to maximize the formation of the ${\beta}$ phase of PVDF to enhance the piezoelectricity of the devices. The phase transition of PVDF induced by the addition of CNTs was confirmed by analyzing the X-ray diffraction patterns, scanning electron microscopy images, and atomic force microscopy images. The enhanced output efficiency of the PZT/PVDF piezoelectric devices was confirmed by measuring the output current and voltage of the fabricated devices. The maximum output current and voltage of the PZT/PVDF piezoelectric devices was 200 nA and 350 mV, respectively, upon incorporation of 0.06 wt% CNTs.