• Title/Summary/Keyword: Electronic Conduction

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Connectivity and Electrical Conductivity of YSZ-NiO Composite

  • Park, Young-Min;Park, Gyeong-Man
    • The Korean Journal of Ceramics
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    • v.4 no.2
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    • pp.141-145
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    • 1998
  • The electrical properties of the mixed conducting yttria(8 mol%) stabilized zirconia(YSZ)-nickel oxide(NiO) composites were examined by a.c. impedance, 4-probe d.c. conductivity between 400 and $1000^{\circ}C$. The oxygen partial pressure dependence of conductivity, and electromotive force measurement of galvanic cell enabled to determine the electronic contribution to the conduction. Up to 6 vol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in ionic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effect of composition on the electrical property was explained by the microstructure and thus by the distribution of two phases.

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Microstructure and Conduction Characteristics of Bismuth-Based Zinc Oxide Varistors with $Y_2O_3$Additive ($Y_2O_3$가 첨가된 비스무스계 산화아연 바리스터의 미세구조 및 전도특성)

  • 박춘현;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.281-285
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    • 1998
  • The microstructure and conduction characteristics of ZnO varistor fabricated in the range of 0.0 ~ 4.0mol% $Y_20_3$ were investigated. With increasing$Y_20_3$ content, distribution of spinel phase decreased, whereas Y-rich phase segregated to the nodal point increased, as a result, the average grain size decreased in the range of $20.0 ~ 4.8{\mu}m$. $Y_20_3$ content showing relatively good conduction characteristics was l.Omol%, then nonlinear exponent and leakage current was 55.3, 0.66mA.respectively.

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The Structural and Electrical Properties of Vanadium Oxide Thin Films as $O_2/(Ar+O_{2})$ ratio ($O_2/(Ar+O_{2})$비에 따른 바나듐 산화막의 구조적, 전기적 특성)

  • 최용남;최복길;최창규;김성진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.729-732
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    • 2001
  • In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

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Facile Modulation of Electrical Properties on Al doped ZnO by Hydrogen Peroxide Immersion Process at Room Temperature

  • Park, Hyun-Woo;Chung, Kwun-Bum
    • Applied Science and Convergence Technology
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    • v.26 no.3
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    • pp.43-46
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    • 2017
  • Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

Study on electric conduction mechanism of organic light-emitting diodes (유기 발광 소자의 전기 전도 기구 연구)

  • Chung, Dong-Hoe;Kim, Sang-Keol;Jeong, Joon;Jang, Kyung-Uk;Hong, Jin-Woong;Lee, Joon-Ung;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1007-1010
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    • 2003
  • We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism and luminance characteristics were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400nm. we analyzed the low electric and the high electric field in theoretically. Also, maximum luminous efficiency is the thickness 200 nm of $Alq_3$ in luminous-thickness characteristics.

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Thermal Quench at Current Terminals of the Conduction-Cooled HTS Magnet (전도냉각형 HTS 자석의 전류도입부에서의 열적 퀜치)

  • Bae, Joon-Han;Bae, Duck-Kweon;Park, Hae-Yong;Shon, Myung-Hwan;Seong, Ki-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.358-359
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    • 2008
  • The heat generated in the high-Tc superconducting (HTS) devices is related with the cost efficiency and safe factor of HTS devices. This paper deals with the quench at the conduction-cooled joint between the HTS wire and copper terminals. The 3-D numerical simulation of this phenomenon was implemented and compared with the experimental results. The experiment was implemented with the HTS wire mounted on the copper blocks cooled with a Gifford McMahon (GM) cryocooler.

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Characteristics of electrical conduction in glass transition point of XLPE (XLPE의 glass 전이점에서 전기전도 특성)

  • Lim, Ho-Hwan;Kim, Ui-Kune;Kook, Sang-Hoon
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.763-765
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    • 1988
  • Thermally stimulated current, cubical expension, capability change were measured by temperature variation. According to the capability change, TSC peak value was increased. We found that the crystal dissolution is 375 K and amorphous state becomes 388K. Charged partical behavior in the dipole and electronic trop were found iomic conduction in the low field and electronic conduction in the high field. Charged particle in the semiconduction storey was aceumulated in the interface by electron injection which can be arise TSC.

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Microwave Properties of Organic-inorganic Composite Material Antenna with Various Fabrication Method of Conduction Material (전도체 형성 방법에 따른 유무기 복합재료 안테나의 고주파 특성)

  • Park, Sang-Hoon;Seong, Won-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.832-837
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    • 2006
  • Antennas were fabricated by physical(adhesive) and chemical(deposition+plating) method on organic-inorganic composite material. And antennas were measured dielectric constant and gain. Dielectric constant of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness and number of conduction material composition. But antennas were fabricated by chemical method was reached to 90 % of dielectric material. Gain of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness. But they were unrelated with conduction material composition. The other side antennas were fabricated by chemical method excelled more 0.8 dBic than antennas were fabricated by physical method in gain of antenna. Finally, chemical method can expect excellent product process because it can produce smaller size, higher gain and elimination of many handworks.

The Properties of Electrical Conduction and Photoconduction in polyphenylene Sulfide(PPS) by Uniaxal Elongation (일축연신에 따른 Polyphenylene Sulfide(PPS)의 전기전도 및 광전도 특성)

  • Lee, Un-Yong;Jang, Dong-Uk;Shin, Tae-Su;Lim, kee-Joe;Ryu, Boo-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.763-767
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    • 1998
  • In this paper, it is investigated how the morphology and electrical properties in Polyphenylene Sulfide(PPS) changed by uniaxial elongation. XRD(X-ray diffraction) pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. electrical conduction mechanism of PPS is explained as Schottky emission mechanism. the electrical current is decreased by increasing elongation ratio. The conductivity is changed considerably above the glass transition temperature around 82(>$^{\circ}C$). The band gap of PPS is evaluated as 3.7~4(eV)

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Heat Conduction Analysis of Spreaders with Concentrated Heat Sources-Thermal Concentration Effect in Cooling Electronic Devices- (집중열원이 있는 방산판의 열전도 해석-전자부품 냉각에서의 열집중 현상-)

  • 최상민
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.13 no.4
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    • pp.726-733
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    • 1989
  • Conduction heat transfer in heat spreaders with concentrated heat sources is analyzed by finite element method calculation and the results are compared to analytical solutions for simplified cases. The local temperature rise is dependent on the heat flux, thermal conductivity of the spreader material, and the contact size of the heat source. The effect of the adjacency of other heat sources is also examined.