• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.49 no.8
• /
• pp.47-54
• /
• 2012

In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are $11.2{\Omega}$ of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.1 s.343
• /
• pp.7-12
• /
• 2006

In this study, we developed irreversible and stable micro-size ferromagnetic structures utilizing hydrogenation and electron-beam lithography processes. The compositionally modulated (CM) Fe-Zr thin films that had average compositions $Fe_XZr_{100-x}$ with $x=65-85\%$ modulation periods of similar to 1 nm, and total thicknesses of similar to 100 m were prepared. The magnetic properties of CM Fe-Zr thin films were measured using a SQUID magnetometer, VSM and B-H loop tracer. After hydrogenation, the CM films exhibited larger magnetic moment increases than similar homogeneous alloy films for all compositions and かey showed largest increase in $Fe_{80}Zr_{20}$ composition. After aging in air at $300^{\circ}K$ the hydrogenated $Fe_{80}Zr_{20}$ CM films showed much larger magnetic moment increases, indicating that they relax to a stable, irreversible, soft magnetic state. The selective hydrogenation through electron-beam lithographed windows were performed after the circle shaped windows were prepared on $Fe_{80}Zr_{20}$ CM films by electron beam lithography. The hydrogenation through electron-beam resist and W lithographic techniques give a $49\%$ magnetic moment increase. This method can be applied to nano scale structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.575-577
• /
• 1999

In this study, the PPPI(Plasma Polymerized Phenyl Isothiocyanate) resist thin film was manufactured in accordance with the plasma polymerization method and after exposing it to an electron beam, a pattern was formed by plasma etching. With the FT-IR(Fourier transform-infrared spectrometry) analysis, it was confirmed that the PI(Phenl Isothiocyanate) monomer was successsfully produced into a thin film by the plasma. The polymerization rate of the thin film was 450~ 1012($\AA$/min) to 100-200(W) discharge power and 120-12($\AA$/min) to 0.1 ~0.4[torr] system pressure.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.1253-1256
• /
• 2005

We have developed an electron lithography method, Electron Emission Lithography (EEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MIM technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 10 um in a system capable of 100 m resolution. Further improvements in resolution to 50 nm are possible.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.291-291
• /
• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.133-134
• /
• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.637-641
• /
• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.71-71
• /
• 2003

Hot embossing has been widely accepted as an alternative to photolithography in generating patterns on polymeric substrates. The optimization of embossing process should be accomplished based on polymer substrate materials. In this paper, the effect of polymer substrates on nano scale hot embossing process was studied. Silicon molds with nano size patterns were fabricated by e-beam direct writing. Molds were coated with self-assembled monolayer (SAM) of (1, 1, 2.2H -perfluorooctyl)-trichlorosilane to reduce the stiction between mold and substrates. For an embossing, pressure of 55, 75 bur, embossing time of 5 min and temperature of above transition temperature were peformed. Polymethylmethacrylates (PMMA) with different molecular weights of 450,000 and 950,000, MR-I 8010 polymer (Micro Resist Technology) and polyaliphatic imide copolymer were applied for hot embossing process development in nano size. These polymers were spun coated on the Si wafer with the thickness between 150 and 200 nm. The nano size patterns obtained after hot embossing were observed and compared based on the polymer properties by scanning electron microscopy (SEM). The imprinting uniformity dependent on the Pattern density and size was investigated. Four polymers have been evaluated for the nanoimprint By optimizing the process parameters, the four polymers lead to uniform imprint and good pattern profiles. A reduction in the friction for smooth surfaces during demoulding is possible by polymer selection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.652-655
• /
• 2001

In this paper, I have studied minimization of the kerf-width and surface burning which are occurred after the singulation process of multi layer $\mu$-BGA( thickness 1.1 mm, 0.9 mm) with a pulsed Nd:YAG( = 532 nm, repetition rate = 10 Hz) laser. The thermal energy of a pulsed Nd:YAG laser is used to cut the copper layer. I have studied are minimization of the surface burning and kerf-width using a photo resist, $N_2$blowing and polyester double sided tape as a cutting parameter. The $N_2$blowing reduces a laser energy loss by debris and suppresses a surface carbonization. Also, I have studied characters of cutting with a choice of side of laser beam incidence. The SEM(Scanning Electron Microscope), non-contact 3D inspector and high-resolution microscope are used to measure kerf width and surface state. The optimum value of 1.1 mm $\mu$-BGA singulation is 524 $\mu$m that is reduced kerf width of 60 % with $N_2$blowing. And I obtained reduction of carbonization of 68 % with a polyester double side tape in 0.9 mm $\mu$-BGA. I used laser intensity of 1.91$\times$10$^{6}$ / $\textrm{cm}^2$ in this study.

• Journal of Welding and Joining
• /
• v.32 no.3
• /
• pp.60-67
• /
• 2014

The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.