• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.132-132
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• 1998

Ion bombardment in the keV range is known to induce drastic chemical modifications in organic and inoranic molecular comppounds. A degrading effects in orgainc materials such as the release of ppolymer compponents and the chemistry of the iradiation pprocess have been observed. The work to be described was carried out in order to understand the irradiation effect better. The sampple(ppolyimide : Kappton ) Were irradiated by Ar+, Ne+, H+ ions and electrons (3 keV) to fluence ranging from ~1$\times$1015 to ~1$\times$1017 ions/$cm^2$ at room tempperature. The impplant was usually rastered over an area of a few $cm^2$ . These ion impplantation were carried out in an electron sppectrometer ESCA 5700 (ppHI Ltd) at a residual gas ppressure of ~5$\times$10-10 Torr. X-ray pphotoelectron sppectroscoppy(XppS) measurements were made using a monochromatized Al Kａ(1486.6 eV) excitation source. The pphotoemitted electrons were detected by hemisppherical analyser with a ppass energy of 23.5 eV. Core-level binding energies were referenced to the Fermi level. To avoid the charging effect it was used the neutralizer. We studied the irradiation effects on ppolyimide with Ar+, Ne+, He+ ions and electrons by XppS which 추 pprovide detailed information concerning the bonding-induced changes.

• Laser Solutions
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• v.9 no.2
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• pp.23-30
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• 2006

Silicon Nitride $(Si_3N_4)$, which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C)$, however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ rod is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Vickers hardness (Hv); and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy (EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.16-24
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• 2006

Silicon Nitride ($Si_3N_4$), which is widely used in a variety of applications, is hard-to-machine due to its high hardness. At high temperature (e.g. above $1000^{\circ}C$), however, the machinability can be greatly improved. In this work, we used a $CO_2$ laser with a high absorptivity to $Si_3N_4$ of 0.9 to locally heat the surface of a rotating $Si_3N_4$ rod on a lathe. In order to examine the effects of the laser-assisted heating on hardness, an $Si_3N_4$ md is heated to temperatures from 900 to $1800^{\circ}C$ and is rotated at speeds from 440-900 rpm in experiments. When the rod is naturally cooled to room temperature, we measured the Victors hardness (Hv): and observed the surface of HAZ using a scanning electron microscopy (SEM). Energy dispersive spectroscopy(EDS) was used for ingredient analysis. Results showed that when heated at $1600^{\circ}C$, the hardness of $Si_3N_4$ decreased from 1500 Hv to 1000 Hv. Also, in order to predict the depth of HAZ, we numerically analyzed the laser-assisted heating of $Si_3N_4$.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.57-61
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• 2004

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.426-431
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• 2007

We have fabricated a magnetic micro-deflector for a microcolumn system and tested its performance by operating it in the low energy region. The micro-deflector is composed of Cu coils around cylindrical cores with $500{\mu}m$ diameter. The diameter of the Cu coil itself is $100{\mu}m$. Two pairs of deflectors designed for a 2-dimensional scan, that is X and Y deflection, are fixed on an insulating plate. The low power performance of a magnetic micro-deflector attached to a microcolumn system has been tested and the magnitude of deflection is measured to be ${\sim}100{\mu}m/A$, which offers the possibility for practical applications of the magnetic micro-deflector.

• Journal of the Mineralogical Society of Korea
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• v.23 no.3
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• pp.211-217
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• 2010

A micro-focus X-ray computed tomography (CT) was employed to determine quantitative phase analysis of skarn Zn-Pb-Cu ore by nondestructive visualization of the internal mineral distribution of a skarn ore. The micro CT images of the ore were calibrated to remove beam hardening artifacts, and compared with its scanning electron microscope (SEM) images to set the threshold of CT number range covering sulfide ore minerals. The volume ratio of sulfide and gangue minerals was calculated 20.5% and 79.5%, respectively. The quantitative 3D X-ray CT could be applied to analyse the distribution of economic minerals and their recovery.

• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.31-38
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• 2010

In this study, we have demonstrated the fine structure effect of PdCo electrocatalyst on oxygen reduction reaction activity with different alloy composition and heat-treatment time. In order to identify the intrinsic factors for the electrocatalytic activity, various X-ray analyses were used, including inductively coupled plasma-atomic emission spectrometer, transmission electron microscopy, X-ray diffractometer, and X-ray Absorption Spectroscopy technique. In particular, extended X-ray absorption fine structure was employed to extract the structural parameters required for understanding the atomic distribution and alloying extent, and to identify the corresponding simulated structures by using FEFF8 code and IFEFFIT software. The electrocatalytic activity of PdCo alloy nanoparticles for the oxygen reduction reaction was evaluated by using rotating disk electrode technique and correlated to the change in structural parameters. We have found that Pd-rich surface was formed on the Co core with increasing heating time over 5 hours. Such core shell structure of PdCo/C showed that a superior oxygen reduction reaction activity than pure Pd/C or alloy phase of PdCo/C electrocatalysts, because the adsorption energy of adsorbates was apparently reduced by lowering the dband center of the Pd skin due to a combination of the compressive strain effect and ligand effect.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.275-280
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• 2003

Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.