• Electrical & Electronic Materials
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• v.7 no.6
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• pp.462-472
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• 1994

In this paper, electron drift velocity is experimentally measured in SF$_{6}$+N$_{2}$ Gas by induced cur-rent method and quantitaive production of electron transport coefficient is calculated by backward-prolongation of Boltzmann equation. Then electron energy distribution function and attachment coefficients are calculated. This paper can use the electron drift velocity by experimentally and the electron transport coefficient by calculated as a basic data of mixed Gas by comparing and investigating.g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.164-167
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure $CO_2$ were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of $CO_2$ molecular gas. And for propriety of two-term approximation of Boltzmann equation analysis, the calculated results compared with the electron transport coefficients measured by Nakamura.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.29-32
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• 2001

We measured the electron transport coefficients(the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_L$) in pure $CF_4$ over the E/N range from 0.04 Td to 250 Td by the double shutter drift tube. And these electron transport coefficients in pure $CF_4$ were calculated over the E/N range from 0.01 to 250 Td at 1 Torr by using the two-term approximation of the Boltzmann equation.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.104-108
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• 2008

Accurate sets of electron collision cross sections and the electron transport coefficients for atoms and molecules are necessary for quantitative understanding of plasma phenomena Kr and Xe atom are used in many industrial applications, such as in PDP and fluorescent induction lamps(FILs). Therefore, we analysed and calculated the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in pure Kr and Xe gases over the wide E/N range from 0.001 to 500[Td] at 1[Torr] by two-tenn approximation of the Boltzmann equation.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1544-1545
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• 2011

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source $C_4F_6$ gas may be used by itself and mixed with other gases are also used. However, the molecular gas $C_4F_6$ study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient ${\alpha}$/N, and the attachment coefficient ${\eta}$/N in $C_4F_6$ gas.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1404_1405
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• 2009

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. $GeH_4$ is used in many applications with $Si_2H_6$ gas, such as amorphous alloy, a thin film of silicon and solar cell. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in $GeH_4$gas over the E/N range from 0.01 to 1000 Td by two-term approximation of the Boltzmann equation.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.56 no.1
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• pp.1-5
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• 2007

Study on the electron transport coefficient in mixtures of CF4 and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CF_4$ and Ar, were used. The differences of the transport coefficients of electrons in $CF_4$ mixtures of Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f({\varepsilon})$ has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.