• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.76-77
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• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.268-273
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• 1997

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.285-288
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• 2002

In this study, we investigate electron transport properties in xenon gas by using a Monte Carlo technique for electrons with energies below 10 keV. First of all, we determine a set of electron collision cross sections with xenon by scrutinizing the cross section data taken from many publications. Then, the W value and the Fano factor for electrons in gaseous xenon are computed by the Monte Carlo simulation on the assumption that electrons undergo single collision events including elastic, excitation and ionization processes. We also evaluate the production number of excited atoms.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.79-85
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• 1990

Monte Carlo simulation of hot-electron transport in $Al_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$ As modulation-doped structure has been performed in which the nonparabolicity in $\Gamma$ valley is taken into account. The calculated results show that the inclusion of the nonparabolicty effect results in a huge decrease in drift velocity.

• Journal of Environmental Science International
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• v.6 no.4
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• pp.369-378
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• 1997

The effects of various intensity of W-B on barley seeding were investigated by PS I and II activities and chlorophyll fluorescence. The Inhibitory effect of UV-B radiation on electron transport activity was Increased as the intensity of UV-B Irradiation was increased. Especially, PS I is more sensitive to UV-B radiation than PS I is. By the addition of uncle electron donor, DPC, to the chloroplasts of the barley seedlings treated with UV-B, the photoreduction of DCPIP was recovered by only 1 IBI on electron transport activity. However, the activity of PS II was Inhibited by 45% by the treatment with UV-B, but recovered it only 11% by the addition of DPC. These suggest that other sites besides the oxidation site of PS II may be affected more by UV-B Irradiation. As the intensify of UV-B was Increased, Fo was Increased while Fv was decreased, and thus Fv/Fm was decreased. This means that photochemical efficiency was reduced. With this parameters, it might be that UV-B radiation affected adversely to around PS II.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.37-40
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• 2016

Performance enhancement of organic light-emitting diodes (OLEDs) is investigated in a device structure of ITO/TPD/Alq₃/LiF/Al and ITO/TPD/Alq₃/BCP/LiF/Al. Here, bathocuproine (BCP) is used as an electron-transport layer. Current density-voltage-luminance characteristics of the OLEDs show that the performance of the device is better with BCP layer than without BCP layer. The current density, luminance, luminous efficiency, and external-quantum efficiency are improved by approximately 22%, 50%, 2%, and 18%, respectively. Since the BCP layer lowers the electron energy barrier, electron transport is facilitated and the movement of hole is blocked as the applied voltage increases. This results in an increased recombination rate of holes and electrons.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.7-11
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• 2001

We measured the electron transport coefficients, the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_{L}$, over the E/N range from 0.03 to 100 Td and gas pressure range from 0.133 to 122 kPa in the 0.526% and 5.05% $C_{3}F_{8}$-Ar mixtures by the double shutter drift tube with variable drift distance. And we calculated these electron transport coefficients by using multi-term approximation of Boltzmann equation analysis. We determined the electron collision cross sections set for $C_{3}F_{8}$ molecule by the comparison of measurement and calculation. Our special attention in the present study was focused upon the inelastic collision cross sections of the $C_{3}F_{8}$ molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.159-162
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• 1998

This paper describes the electron transport characteristics in $SF_6$+He gas calculated for range of E/N values from 50~700[Td] by the Monte Carlo simulation and Boltzrnann equation method using a set of electmn collision cross sections determined by the authors and the values of electron swarm parameters are obtained by M F method. The results gained that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or attachment coefficents, longitudinal and h-ansverse diffusion coefficients agree with the experimental and theoretical for a range of E/N.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.839-842
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• 2012

We report for the first time the synthesis of niobium dioxide nanowires on a sapphire substrate by chemical vapor transport method. We identified single crystalline nature of as-synthesized nanowires by scanning electron microscopy and transmission electron microscopy. Niobium dioxide nanowires with their large surface-to-volume ratio and high activities can be employed for electrochemical catalysts and immunosensors. The Raman spectrum of niobium dioxide nanowires also confirmed their identity.