• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• 한국공작기계학회논문집
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• 제14권1호
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 대한전기학회논문지
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• 제41권8호
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• 전기전자학회논문지
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• 제21권3호
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• 대한화학회지
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• 제38권2호
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• pp.169-173
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• 1994

인도네시아 Manado만의 Sulawesi에서 채집한 미동정된 해면으로부터 KB cancer cell line에 대해 활성을 갖는 xestoquinone, halenaquinol sulfate 및 halenaquinol이 검출되었다. 이들을 $^1H-,\;^{13}C$-NMR, $^1H-,\;^{13}C$(1 bond) heteronuclear Multiple Quantum Cogerence Spectroscopy$(HMQC)^1$, $^1H-,\;^{13}C$C(2 and 3 bond) Heteronuclear multiple Bond Correlation Spectroscopy$(HMBC)^2$, Electron Impact Mass Spectroscopy(EI ms), UV 및 IR에 의해 밝혔다.

• 플랜트 저널
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• 제16권3호
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• pp.47-52
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• 2020

본 연구에서는 알루미늄으로 제작된 심해 장비의 부식 저항 능력 향상시키기 위해 알루미늄 부식 방지 방법과 측정방법을 조사하였다. 조사된 부식 방지 방법은 Cathodic Protection(음극화 보호), Conversion Coating, Anodizing, 및 Organic Coating이었다. 그리고 간단하게 조사된 측정 방법은 Scanning Electron Microscope (SEM), Electrochemical Impedance Spectroscopy (EIS), Glow discharge optical emission spectrum spectroscopy (GD-OES), Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), Scanning Vibrating Electrode Technique (SVET), Contact Angle(접촉각), Interfacial Tension (경계면 장력)이었다. 알루미늄 부식을 방지하기 위해 널리 사용되는 방법은 Anodizing과 Organic Coating이었으며, 부식 측정을 위해서는 여러 방법들이 골고루 사용되었다. 그 중 많이 사용되는 방법은 표면의 구조를 관찰하 위한 SEM과 부식 저항 능력을 측정하기 위한 접촉각 측정이었다.

• 대한화학회지
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• 제39권4호
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• pp.301-305
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• 1995

인도네시아 Manado만의 Sulawesi에서 채집한 해면 Spongia sp.로부터 KB Cancer cell line에 대하여 활성을 갖는 halenaquinone, epispongiatriol 및 aldisin을 분리하였다. 이들의 구조를 $1^H,\;13^C\;NMR\;1^H\;13^C(1\;bond)$ Heteronuclear Multiple Quantum Coherence Spectroscopy (HMQC), 1H 13C(2 and 3 bond) Heteronuclear Multiple Bond Correlation Spectroscopy (HMBC), Electron Impact Mass Spectroscopy (EI ms) 및 IR로 밝혔다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.