• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.144-144
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• 2011

Diagnostics of plasma density and temperature play an important role for monitoring plasma processing and Laser Thomson scattering is a one of the most accurate diagnostic technique for measuring plasma density and temperature because of none-perturbation to plasma among various diagnostic techniques invented to measure plasma density and temperature. I will briefly review Laser Thomson scattering experiment performed in KRISS and difficulties for measuring the electron velocity distribution such as Gaussian due to low signal-to-noise ratio with showing results that we got until now. This work is an intermediate step in a process that we will get a reliable data which shows physical phenomenon of plasma compared with other diagnostic techniques and results.

• Current Applied Physics
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• v.18 no.11
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• pp.1212-1217
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• 2018

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and -8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.57-62
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• 2011

The energy conversion efficiency of DSSCs (Dye-Sensitized Solar Cells) is dependent on the powder size, the structure, and the morphology of $TiO_2$ electrode. The higher efficiency is obtained with high surface area of the nanoanatase-$TiO_2$ powder adsorbed onto a lot more of the dye. Also, the enhancement of light scattering increases the efficiency with high adsorption of the dye. Powder size, crystalline phase, and shape of $TiO_2$ obtained by hydrothermal method have 15-20 nm, anatase and round. $TiO_2$ electrode has fabricated with the mixture of scattering $TiO_2$ particle with 0.4 ${\mu}m$ in nano-sized powder. Conversion efficiency of series of DSSCs was measured with volume fraction of scattering particle. Photovoltaic characteristics of DSSCs with 10% scattering particles are 3.51 mA for Jsc (short circuit current), 0.79 V for Voc(open circuit potential), filling factor 0.619 and 6.86% for efficiency. Jsc was improved by 11% and enhancement of efficiency by 0.77% compared with that of no scattering particles. The confinement of inserted light by light scattering particles has more increase of the injection of exiton(electron-hole pair) and decrease of moving path in electron. Efficiencies of DSSCs with more than 10% for scattering particles have reduced with increasing the pore in the $TiO_2$ electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.236-239
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• 2002

The electron-atom collision studies has been essentially use\ulcorner for testing and developing suitable theories of the scattering and collision processes, and for providing a tool for obtaining detailed information on the structure of the target atoms and molecules and final collision products. And, the development of that has also been strongly motivated by the need for electron collision data in such fields as laser physic and development, astrophysics, plasma devices, upper atmospheric processes and radiation physics. Therefore, we explains the concept and the principle of determination of the electron collision cross sections for atoms and molecules by using the present electron swarm method.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.1
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• pp.19-23
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• 2014

This paper describes the electron transport characteristics in $SF_6$-He gas calculated E/N values 0.1~700[Td] by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients for $SF_6$-He gas at a range of E/N. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.435-440
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• 2003

The electron-atom collision studies have been essentially used for testing and developing suitable theories of the scattering and collision processes, and for providing a tool for obtaining detailed information on the structure of the target atoms and molecules and final collision products. And, the development of that has also been strongly motivated by the need for electron collision data in such fields as laser Physics and development, astrophysics, Plasma devices, upper atmospheric processes and radiation physics. The concept and the Principle of determination of the electron collision cross sections for atoms and molecules by using the present electron swarm method are explained.

• Progress in Superconductivity and Cryogenics
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• v.15 no.1
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• pp.14-18
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• 2013

We introduce a generic method to analyze optical 17reflectance spectra of strongly correlated electron systems including high-temperature superconductors by using an extended Drude model and Allen's approach. We explain the process step by step from reflectance through the optical conductivity and the scattering rate to the bosonic spectral function. Through the process we are able to get important information on the interactions between charge carriers from measured optical conductivity of the strongly correlated electron systems including copper oxide and iron pnitide high temperature superconductors.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.32.2-32.2
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• 2009

We examine cyclotron resonant interactions of radiation belt electrons with VLF chorus, plasmaspheric ELF hiss and electromagnetic ion cyclotron (EMIC) waves. Bounce-averaged diffusion rates depend on wave mode, equatorial pitch-angle, electron energy and L-shell. As well, diffusion rates can be sensitive to the latitudinal distributions of particle density and wave power. For different configurations of the plasmasphere, we calculate electron precipitation loss timescales due to combined scattering by VLF chorus, ELF hiss and EMIC waves.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.3-63
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• 2003