• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).

• Journal of Astronomy and Space Sciences
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• v.37 no.1
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• pp.29-34
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• 2020

On 21 August 2017, during 16:49 UT and 20:02 UT period, a total solar eclipse started. The totality shadow occurred over the United States in time between ~17:15 UT and ~18:47 UT. When the solar radiation is blocked by the moon, observations of the ionospheric parameters will be important in the space weather community. Fortunately, during this eclipse, two Swarm satellites (A and C) flied at about 445 km through lunar penumbra at local noon of United States in the upper ionosphere. In this work, we investigate the effect of the solar eclipse on electron density, slant total electron content (STEC) and electron temperature using data from Swarm mission over United States. We use calibrated measurements of plasma density and electron temperature. Our results indicate that: (1) the electron density and STEC have a significant depletion associated with the eclipse; which could be due to dominance of dissociative recombination over photoionization caused by the reduction of ionizing extreme ultraviolet (EUV) radiation during the eclipse time (2) the electron temperature decreases, compared with a reference day, by up to ~150 K; which could be due to the decrease in photoelectron heating from reduced photoionization.

• Journal of Powder Materials
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• v.24 no.4
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• pp.279-284
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• 2017

The formation mechanism and photocatalytic properties of a multiwalled carbon nanotube (MWCNT)/$TiO_2$-based nanotube (TNTs) composite are investigated. The CNT/TNT composite is synthesized via a solution chemical route. It is confirmed that this 1-D nanotube composite has a core-shell nanotubular structure, where the TNT surrounds the CNT core. The photocatalytic activity investigated based on the methylene blue degradation test is superior to that of with pure TNT. The CNTs play two important roles in enhancing the photocatalytic activity. One is to act as a template to form the core-shell structure while titanate nanosheets are converted into nanotubes. The other is to act as an electron reservoir that facilitates charge separation and electron transfer from the TNT, thus decreasing the electron-hole recombination efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.831-834
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• 2000

Characteristics of organic light-emitting diodes(OLEDs) were studied with devices made by PECCP[poly(3,6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] Langmuir-Blodget(LB) films. The emissive organic material was synthesized and named PECCP, which has a strong electron donor group and an electron accepter group in main chain repeated unit. The LB technique was employed to investigate the identification of the recombination zone in the ITO/PECCP LB films/Alq$_3$/Al structure by varying the LB film thickness. PECCP was considered as an emissive layer and Alq$_3$was used as an electron-transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum, and EL spectrum of those devises.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.168-173
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• 2013

In this paper, we would like to introduce Electron Relay Enhancer (ERE), a supplementary device, which improves commercial solar cell efficiency minimizing electron-hole recombination of solar cell. The ERE in this study is mainly composed of two capacitors which are connected to AC power source and bridge diode system which controls electron flow direction. Two capacitors repeat collecting electrons from solar cell and pumping the collected electrons to load resistance or inverter through the bridge diode system. While one positively charged capacitor collect electrons, the other negatively charged one pumps electrons. A positively charged capacitor pulls the more exited electrons from the solar cell, before the exited electrons recombine the holes in solar cell. That is why the ERE system enhances solar cell efficiency. As a result, the measured power increase of the solar cell with the ERE is varied from 5.9 W to 25.6 W in each experimental condition. Maximal increase rate of the solar cell power with ERE is 30.8% of solar cell power without ERE.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.149-152
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• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.156-156
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• 2010

We have developed highly efficient blue phosphorescent organic light-emitting devices (OLED) with simplified architectures using blue phosphorescent material. The basis device structure of the blue PHOLED was anode / emitting layer (EML) / electron transport layer (ETL) / cathode. The dopant was partially doped into the host layer for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs.

• Journal of Astronomy and Space Sciences
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• v.36 no.3
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• pp.121-131
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• 2019

The ionospheric mid-latitude trough (IMT) is the electron density depletion phenomenon in the F region during nighttime. It has been suggested that the IMT is the result of complex plasma processes coupled to the magnetosphere. In order to statistically investigate the characteristics of the IMT, we analyze topside sounding data from Alouette and ISIS satellites in 1960s and 1970s. The IMT position is almost constant for seasons and solar activities whereas the IMT depth ratio and the IMT feature are stronger and clearer in the winter hemisphere under solar minimum condition. We also calculated transition heights at which the densities of oxygen ions and hydrogen/helium ions are equal. Transition heights are generally higher in daytime and lower in nighttime, but the opposite aspects are seen in the IMT region. Utilizing the Incoherent Scatter Radar (ISR) electron temperature measurements, we find that the electron temperature in the IMT region is enhanced at night during winter. The increase of electron temperature may cause fast transport of the ionospheric plasma to the magnetosphere via ambipolar diffusion, resulting in the IMT depletion. This mechanism of the IMT may work in addition to the simply prolonged recombination of ions proposed by the traditional stagnation model.

• Applied Microscopy
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• v.50
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.1
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.