• Title/Summary/Keyword: Electron range

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A Study on the electron energy diffusion function of the sulphur hexaflouride ($ SF_6$가스의 전자에너지 분포함수에 관한 연구)

  • 김상남;하성철
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.2
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    • pp.95-101
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    • 1999
  • The electron energy distributions function were analysed in sulIitur hexaflowide at E/N : 500~800(Td) for a case of non-equilibrium region in the nran electron energy. This papa- describes the electron transport characteristics in $ SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation Irethod using a set of electron collision cross sectioos determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.region.

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Analysis of Electron Swarm Diffusion Coefficients and Energy Distribution Function in $e^-$-$CF_4$ Scattering ($e^-$-$CF_4$산란중에서 전자군의 확산계수 및 에너지분포함수 연구)

  • 하성철;임상원
    • Electrical & Electronic Materials
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    • v.10 no.4
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    • pp.342-348
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    • 1997
  • In this paper, the behavior of electron swarm parameters and energy distribution function of the discharge under high E/N condition in e$^{-10}$ -CF$_{4}$ gas have been analysed over the E/N range from 1-300(Td) by the MCS and BEq methods using set of electron collision cross section determined by the authors. The swarm parameters and energy distribution function have been calculated for the pulsed Townsend, steady-state Townsend and Time of Flight methods. The results gained that the value of electron swarm parameters such as the electron drift velocity, the electron ionization and attachment coefficients and longitudinal diffusion coefficients in agreement with the experimental and theoretical data for a range of E/N. The electron energy distribution function has been explained and analysed in e$^{-10}$ -CF$_{4}$ at E/N : 5, 10, 100, 200, 300(Td) for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The validity of the results has been confirmed by TOF and SST methods.

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Electron Collision Cross Sections for the TRIES Molecule and Electron Transport Coefficients in TRIES-Ar and TRIES-O2 Mixtures

  • Tuoi, Phan Thi;Tuan, Do Anh;Hien, Pham Xuan
    • Journal of the Korean Physical Society
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    • v.73 no.12
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    • pp.1855-1862
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    • 2018
  • A reliable set of low-energy electron collision cross sections for the triethoxysilane (TRIES) molecule was derived based on the measured electron transport coefficients for a pure TRIES molecule by using an electron swarm method and a two-term approximation of the Boltzmann equation. The electron transport coefficients calculated using the derived set are in good agreement with experimental value over a wide range of E/N values (ratio of the electric field E to the neutral number density N). The present electron collision cross section set for the TRIES molecule, therefore, is the most reliable so far for plasma discharges and for materials processing using the TRIES molecule. Moreover, the electron transport coefficients for the TRIES-Ar and the $TRIES-O_2$ mixtures were also calculated and analyzed over a wide range of E/N for the first time.

Crystallinity and Internal Defect Observation of the ZnTe Thin Film Used by Opto-Electronic Sensor Material (광소자로 사용되는 ZnTe박박의 결정성에 따른 결함 관찰)

  • Kim, B.J.
    • Journal of the Korean institute of surface engineering
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    • v.35 no.5
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    • pp.289-294
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    • 2002
  • ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

Validation of electromagnetic physics models and electron range in Geant4 Brachytherapy application

  • A. Albqoor ;E. Ababneh ;S. Okoor;I. Zahran
    • Nuclear Engineering and Technology
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    • v.55 no.1
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    • pp.229-237
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    • 2023
  • The mechanics underlying photon and electron interactions was validated using our developed Brachytherapy computer code for high Dose Rate (HDR). By comparing the photon cross-section utilizing multiple physics libraries in the developed code, the results were benchmarked against experimental and theoretical findings. Klein-Nishina and experimental cross-section results were in good agreement with the Livermore library results. For two therapeutically relevant materials, the first scattered electron range was measured within 1 mm and 2 mm, which has significant implications for the interpretation of the kernel dose spikes observed in previous research.

Effect of bounce resonance heating on Electron Energy Distribution Function in a small Inductively Coupled Plasma

  • 정진욱;서상훈;장홍영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.208-208
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    • 1999
  • It is found that with increasing power, the measured electron energy distribution by Langmuir probe evolves into a Druyvesteyn-like electron energy distribution in the low-pressure regime of 1mTorr in a small inductively coupled plasma. Electron bounce resonance is introduced to explain the transition of the electron energy distribution against the rf power, The energy diffusion coefficients which determine the shape of the electron energy distribution in elastic range are calculated with and without electron bounce resonance. This electron energy distribution transition is well explained by the electron bounce resonance.

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A study on the electron transport coefficients using monte carlo method in argon gas (몬테칼로법을 이용한 Ar기체의 전자수송계수에 관한 연구)

  • 하성철;전병훈
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.685-692
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    • 1995
  • The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

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Ionization and Attachment Coefficients in Mixtures of $SF_6$ and He ($SF_6-He$ 혼합기체의 전리와 부착계수)

  • Kim, Sang-Nam
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2005.05a
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    • pp.342-345
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    • 2005
  • This paper describes the electron energy distribution function characteristics in $SF_6-He$ gas calculated for range of E/N values from $50{\sim}700[Td]$ by the Monte Carlo simulation(MCS) and Boltzmann equation(BE) method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained by time of flight(TOF) method. The results gained that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

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Monte Carlo Simulation of the Electron transport coefficients using Electron collision cross sections for $SP_{6}$ Gas ($SP_{6}$ 가스의 전자충돌단면적을 이용한 전자수송계수에 대한 몬테칼로 시뮬레이션)

  • 서상현;전병훈;하성철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.152-157
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    • 1995
  • The electron transport coefficients in $SP_{6}$ gas is calculated and analysed for range of E/N values from 150∼800(Td) by a Monte Carlo simulation, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in neatly agreement with the respective experimental and theoretical for a range of E/N. The validity of the results obtained has been confirmed by a Monte Carlo simulation carried out parallel to the analysis.

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The Study of Electron Transport coefficients in $SiH_4$-Ar Mixtures by Using Boltzmann Equation Analysis and Monte-Carlo Simulation (볼츠만방정식과 몬테칼로법에 의한 $SiH_4$-Ar 혼합가스의 전자수송계수에 관한 연구)

  • 하성철;전병훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.169-174
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    • 2001
  • The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

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